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R. Venkatesh

R. Venkatesh contributes to research discovery and scholarly infrastructure.

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Published work

4 published item(s)

preprint2023arXiv

CoRuVSi: A potential candidate for spin semimetal with promising spintronic and thermoelectric properties

Based on our experimental and theoretical studies, we report the identification of the quaternary Heusler alloy, CoRuVSi as a new member of the recently discovered spin semimetals class. Spin polarised semimetals possess a unique band structure in which one of the spin bands shows semimetallic nature, while the other shows semiconducting/insulating nature. Our findings show that CoRuVSi possesses interesting spintronic and thermoelectric properties. Magnetization data reveal a weak ferri-/antiferro magnetic ordering at low temperatures, with only a very small moment $\sim$ 0.13 $μ_B$/f.u., attributed to the disorder. Transport results provide strong evidence of semimetallicity dominated by two-band conduction, while magnetoresistance data show a non-saturating, linear, positive, magnetoresistance. Spin polarization measurements using point-contact Andreev reflection spectra reveal a reasonably high spin polarization of $\sim$ 50\%, which matches fairly well with the simulated result. Furthermore, CoRuVSi shows a high thermopower value of $0.7$ $m Watt/ m-K^{2}$ at room temperature with the dominant contribution from the semimetallic bands, rendering it as a promising thermoelectric material as well. Our ab-initio simulation not only confirms a unique semimetallic feature, but also reveals that the band structure hosts a linear band crossing at $\sim$ -0.4 eV below the Fermi level incorporated by a band-inversion. In addition, the observed topological non-trivial features of the band structure is corroborated with the simulated Berry curvature, intrinsic anomalous Hall conductivity and the Fermi surface. The coexistence of many interesting properties relevant for spintronic, topological and thermoelectric applications in a single material is extremely rare and hence this study could promote a similar strategy to identify other potential materials belonging to same class.

preprint2021arXiv

A note on the fusion product decomposition of Demazure modules

We settle the fusion product decomposition theorem for higher-level affine Demazure modules for the cases $E^{(1)}_{6, 7, 8}, F^{(1)}_4$ and $E^{(2)}_{6}$, thus completing the main theorems of Chari et al. (J. Algebra, 2016) and Kus et al. (Represent. Theory, 2016). We obtain a new combinatorial proof for the key fact, that was used in Chari et al. (op cit.), to prove this decomposition theorem. We give a case free uniform proof for this key fact.

preprint2021arXiv

CoFeVSb: A Promising Candidate for Spin Valve and Thermoelectric Applications

We report a combined theoretical and experimental study of a novel quaternary Heusler system CoFeVSb from the view point of room temperature spintronics and thermoelectric applications. It crystallizes in cubic structure with small DO$_3$-type disorder. The presence of disorder is confirmed by room temperature synchrotron X-ray diffraction(XRD) and extended X-ray absorption fine structure (EXAFS) measurements. Magnetization data reveal high ordering temperature with a saturation magnetization of 2.2 $μ_B$/f.u. Resistivity measurements reflect half-metallic nature. Double hysteresis loop along with asymmetry in the magnetoresistance(MR) data reveals room temperature spin-valve feature, which remains stable even at 300 K. Hall measurements show anomalous behavior with significant contribution from intrinsic Berry phase. This compound also large room temperature power factor ($\sim0.62$ mWatt/m/K$^{2}$) and ultra low lattice thermal conductivity ($\sim0.4$ W/m/K), making it a promising candidate for thermoelectric application. Ab-initio calculations suggest weak half-metallic behavior and reduced magnetization (in agreement with experiment) in presence of DO$_3$ disorder. We have also found an energetically competing ferromagnetic FM)/antiferromagnetic (AFM) interface structure within an otherwise FM matrix: one of the prerequisites for spin valve behavior. Coexistence of so many promising features in a single system is rare, and hence CoFeVSb gives a fertile platform to explore numerous applications in future.

preprint2020arXiv

Oxygen Vacancy-Induced Topological Hall effect in a Nonmagnetic Band Insulator

The discovery of skyrmions has sparked tremendous interests about topologically nontrivial spin textures in recent times. The signature of noncoplanar nature of magnetic moments can be observed as topological Hall effect (THE) in electrical measurement. Realization of such nontrivial spin textures in new materials and through new routes is an ongoing endeavour due to their huge potential for future ultra-dense low-power memory applications. In this work, we report oxygen vacancy (OV) induced THE and anomalous Hall effect (AHE) in a 5$d^0$ system KTaO$_3$. The observation of weak antilocalization behavior and THE in the same temperature range strongly implies the crucial role of spin-orbit coupling (SOC) behind the origin of THE. Ab initio calculations reveal the formation of the magnetic moment on Ta atoms around the OV and Rashba-type spin texturing of conduction electrons. In the presence of Rashba SOC, the local moments around vacancy can form bound magnetic polarons (BMP) with noncollinear spin texture, resulting THE. Scaling analysis between transverse and longitudinal resistance establishes skew scattering driven AHE in present case. Our study opens a route to realize topological phenomena through defect engineering.