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R. Österbacka

R. Österbacka contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2010arXiv

Role of Diffusion in Two-dimensional Bimolecular Recombination

Experiments on carrier recombination in two-dimensional organic structures are often interpreted in the frame of the Langevin model with taking into account only the drift of the charge carriers in their mutual electric field. While this approach is well justified for three-dimensional systems, it is in general not valid for two-dimensional structures, where the contribution of diffusion can play a dominant role. We study the two-dimensional Langevin recombination theoretically and find the critical concentration below which diffusion cannot be neglected. For typical experimental conditions, neglecting the diffusion leads to an underestimation of the recombination rate by several times.

preprint2009arXiv

Effect of Electric Field on Diffusion in Disordered Materials I. One-dimensional Hopping Transport

An exact analytical theory is developed for calculating the diffusion coefficient of charge carriers in strongly anisotropic disordered solids with one-dimensional hopping transport mode for any dependence of the hopping rates on space and energy. So far such a theory existed only for calculating the carrier mobility. The dependence of the diffusion coefficient on the electric field evidences a linear, non-analytic behavior at low fields for all considered models of disorder. The mobility, on the contrary, demonstrates a parabolic, analytic field dependence for a random-barrier model, being linear, non-analytic for a random energy model. For both models the Einstein relation between the diffusion coefficient and mobility is proven to be violated at any finite electric field. The question on whether these non-analytic field dependences of the transport coefficients and the concomitant violation of the Einstein's formula are due to the dimensionality of space or due to the considered models of disorder is resolved in the following paper [Nenashev et al., arXiv:0912.3169], where analytical calculations and computer simulations are carried out for two- and three-dimensional systems.

preprint2009arXiv

Effect of Electric Field on Diffusion in Disordered Materials II. Two- and Three-dimensional Hopping Transport

In the previous paper [Nenashev et al., arXiv:0912.3161] an analytical theory confirmed by numerical simulations has been developed for the field-dependent hopping diffusion coefficient D(F) in one-dimensional systems with Gaussian disorder. The main result of that paper is the linear, non-analytic field dependence of the diffusion coefficient at low electric fields. In the current paper, an analytical theory is developed for the field-dependent diffusion coefficient in three- and two-dimensional Gaussian disordered systems in the hopping transport regime. The theory predicts a smooth parabolic field dependence for the diffusion coefficient at low fields. The result is supported by Monte Carlo computer simulations. In spite of the smooth field dependences for the mobility and for the longitudinal diffusivity, the traditional Einstein form of the relation between these transport coefficients is shown to be violated even at very low electric fields.