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R. Leonelli

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cond-mat.mtrl-sci cond-mat.mes-hall

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preprint2014arXiv

Exfoliating pristine black phosphorus down to the monolayer: photo-oxidation and electronic confinement effects

Thin layers of black phosphorus have recently raised interest for their two-dimensional (2D) semiconducting properties, such as tunable direct bandgap and high carrier mobilities. This lamellar crystal of P atoms stacked together by weak van der Waals forces can be exfoliated down to the stratophosphane monolayer (also called phosphorene) using procedures similar to those used for graphene. Properties of this 2D material are however challenging to probe due to a fast and ubiquitous degradation upon exposure to ambient conditions. Herein, we investigate the crystal degradation using in-situ Raman and transmission electron spectroscopies and highlight a process involving a photo-induced oxidation reaction with adsorbed oxygen in water. The experimental conditions to prepare and preserve mono-, bi- and multilayers of stratophosphane in their pristine states were determined. Study on these 2D layers provides new insights on the effect of confinement on the chemical reactivity and the vibrational modes of black phosphorus.

preprint2008arXiv

Evidence of valence band perturbations in GaAsN/GaAs(001): A combined variable-angle spectroscopic ellipsometry and modulated photoreflectance investigation

The contribution of the fundamental gap E_ as well as those of the E_ + Delta(so) and E+ transitions to the dielectric function of GaAs1-xNx alloys near the band edge were determined from variable-angle spectroscopic ellipsometry and modulated photoreflectance spectroscopy analyses. The oscillator strength of the E_ optical transition increases weakly with nitrogen incorporation. The two experimental techniques independently reveal that not only the oscillator strength of the E+ transition but also that of E_ + Delta(so) become larger compared to that of the fundamental gap as the N content increases. Since the same conduction band is involved in both the E_ transition and its split-off replica, these results reveal that adding nitrogen in GaAs1-xNx alloys affects not only the conduction but also the valence bands.

preprint2004arXiv

The origin of the E+ transition in GaAsN alloys

Optical properties of GaAsN system with nitrogen concentrations in the range of 0.9-3.7% are studied by full-potential LAPW method in a supercell approach. The E+ transition is identified by calculating the imaginary part of the dielectric function. The evolution of the energy of this transition with nitrogen concentration is studied and the origin of this transition is identified by analyzing the contributions to the dielectric function from different band combinations. The L_1c-derived states are shown to play an important role in the formation of the E+ transition, which was also suggested by recent experiments. At the same time the nitrogen-induced modification of the first conduction band of the host compound are also found to contribute significantly to the E+ transition. Further, the study of several model supercells demonstrated the significant influence of the nitrogen potential on the optical properties of the GaAsN system.