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Researcher profile

R. K. Zheng

R. K. Zheng contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.supr-concond-mat.dis-nncond-mat.mes-hallcond-mat.mtrl-sci

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Published work

4 published item(s)

preprint2014arXiv

Anomalous Hall Effect in Variable Range Hopping Regime: Unusual Scaling Law and Sign Reversal with Temperature

Anomalous Hall effect (AHE) is important for understanding the topological properties of electronic states, and provides insight into the spin-polarized carriers of magnetic materials. AHE has been extensively studied in metallic, but not variable-range-hopping (VRH), regime. Here we report the experiments of both anomalous and ordinary Hall effect (OHE) in Mott and Efros VRH regimes. We found unusual scaling law of the AHE coefficient $Rah=aRxx^b$ with b>2, contrasting the OHE coefficient $Roh=cRxx^d$ with d<1. More strikingly, the sign of AHE coefficient changes with temperature with specific electron densities.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

On the roles of graphene oxide doping for enhanced supercurrent in MgB2 based superconductors

Due to their graphene-like properties after oxygen reduction, incorporation of graphene oxide (GO) sheets into correlated-electron materials offers a new pathway for tailoring their properties. Fabricating GO nanocomposites with polycrystalline MgB2 superconductors leads to an order of magnitude enhancement of the supercurrent at 5 K/8 T and 20 K/4 T. Herein, we introduce a novel experimental approach to overcome the formidable challenge of performing quantitative microscopy and microanalysis of such composites, so as to unveil how GO doping influences the structure and hence the material properties. Atom probe microscopy and electron microscopy were used to directly image the GO within the MgB2, and we combined these data with computational simulations to derive the property-enhancing mechanisms. Our results reveal synergetic effects of GO, namely, via localized atomic (carbon and oxygen) doping as well as texturing of the crystals, which provide both inter and intra granular flux pinning. This study opens up new insights into how low-dimensional nanostructures can be integrated into composites to modify the overall properties, using a methodology amenable to a wide range of applications.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Direct observation of local K variation and its correlation to electronic inhomogeneity in (Ba1-xKx)Fe2As2 Pnictide

Local fluctuations in the distribution of dopant atoms are a suspected cause of nanoscale electronic disorder or phase separation observed within the pnictide superconductors. Atom probe tomography results present the first direct observations of dopant nano-clustering in a K-doped 122-phase pnictides. First-principles calculations suggest the coexistence of static magnetism and superconductivity on a lattice parameter length scale over a large range of doping concentrations. Collectively, our results provide evidence for a mixed scenario of phase coexistence and phase separation originating from variation of dopant atom experiments distroibutions.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Graphene doping to enhance flux pinning and supercurrent carrying ability in magnesium diboride superconductor

It has been shown that graphene doping is sufficient to lead to an improvement in the critical current density - field performance (Jc(B)), with little change in the transition temperature in MgB2. At 3.7 at% graphene doping of MgB2 an optimal enhancement in Jc(B) was reached by a factor of 30 at 5 K and 10 T, compared to the un-doped sample. The results suggested that effective carbon substitutions by grapheme, 2D nature of grapheme and the strain effect induced by difference thermal coefficient between single grapheme sheet and MgB2 superconductor may play an important role in flux pinning enhancement.

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