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Researcher profile

R. Joynt

R. Joynt contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hallcond-mat.othercond-mat

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Published work

7 published item(s)

preprint2014arXiv

Signatures of Valley Kondo Effect in Si/SiGe Quantum Dots

We report measurements consistent with the valley Kondo effect in Si/SiGe quantum dots, evidenced by peaks in the conductance versus source-drain voltage that show strong temperature dependence. The Kondo peaks show unusual behavior in a magnetic field that we interpret as arising from the valley degree of freedom. The interplay of valley and Zeeman splittings is suggested by the presence of side peaks, revealing a zero-field valley splitting between 0.28 to 0.34 meV. A zero-bias conductance peak for non-zero magnetic field, a phenomenon consistent with valley non- conservation in tunneling, is observed in two samples.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Prediction of extremely long electron spin lifetimes at room temperature in wurtzite semiconductor quantum wells

Many proposed spintronics devices require mobile electrons at room temperature with long spin lifetimes. One route to achieving this is to use quantum wells with tunable spin-orbit (SO) parameters. Research has focused on zinc-blende materials such as GaAs which do not have long spin lifetimes at room temperature. We show that wurtzite (w) materials, which possess smaller SO coupling due to being low-Z, are better suited for spintronics applications. This leads to predictions of spin lifetimes in w-AlN exceeding 2 ms at helium temperatures and, relevant to spintronic devices, spin lifetimes up to 0.5 $μs$ at room temperature.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Theory of Electron Spin Relaxation in n-Doped Quantum Wells

Recent experiments have demonstrated long spin lifetimes in uniformly n-doped quantum wells. The spin dynamics of exciton, localized, and conduction spins are important for understanding these systems. We explain experimental behavior by invoking spin exchange between all spin species. By doing so we explain quantitatively and qualitatively the striking and unusual temperature dependence in (110)-GaAs quantum wells. We discuss possible future experiments to resolve the pertinent localized spin relaxation mechanisms. In addition, our analysis allows us to propose possible experimental scenarios that will optimize spin relaxation times in GaAs and CdTe quantum wells.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Tunable spin-selective loading of a silicon spin qubit

The remarkable properties of silicon have made it the central material for the fabrication of current microelectronic devices. Silicon's fundamental properties also make it an attractive option for the development of devices for spintronics and quantum information processing. The ability to manipulate and measure spins of single electrons is crucial for these applications. Here we report the manipulation and measurement of a single spin in a quantum dot fabricated in a silicon/silicon-germanium heterostructure. We demonstrate that the rate of loading of electrons into the device can be tuned over an order of magnitude using a gate voltage, that the spin state of the loaded electron depends systematically on the loading voltage level, and that this tunability arises because electron spins can be loaded through excited orbital states of the quantum dot. The longitudinal spin relaxation time T1 is measured using single-shot pulsed techniques and found to be ~3 seconds at a field of 1.85 Tesla. The demonstration of single spin measurement as well as a long spin relaxation time and tunability of the loading are all favorable properties for spintronics and quantum information processing applications.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Charge sensing and controllable tunnel coupling in a Si/SiGe double quantum dot

We report integrated charge sensing measurements on a Si/SiGe double quantum dot. The quantum dot is shown to be tunable from a single, large dot to a well-isolated double dot. Charge sensing measurements enable the extraction of the tunnel coupling, t, between the quantum dots as a function of the voltage on the top gates defining the device. Control of the voltage on a single such gate tunes the barrier separating the two dots. The measured tunnel coupling is an exponential function of the gate voltage. The ability to control t is an important step towards controlling spin qubits in silicon quantum dots.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Spin Relaxation in Isotopically Purified Silicon Quantum Dots

We investigate spin-flip processes of Si quantum dots due to spin-orbit coupling. We utilize the spin-orbit coupling constants related to bulk and structure inversion asymmetry obtained numerically for two dimensional heterostructures. We find that the spin-flip rate is very sensitive to these coupling constants. We investigate the nuclei-mediated spin-flip process and find the level of the isotope $^{29}$Si concentration for which this mechanism become dominant.

0 citations0 reviewsNo code linkedOpen access
preprint1995arXiv

Temperature dependent gap anisotropy in Bi$_{2}$Sr$_{2}$CaCu$_{2}$ O$_{8+x}$ as evidence for a mixed-symmetry ground state

In a recent experiment, Ma et al. measured the temperature dependence of the gap anisotropy of oxygen-annealed Bi$_{2}$Sr$_{2}$CaCu$_{2}$O$_{8+x}$. Their measurements were taken along the two directions $Γ- M$ and $Γ- X$. They found that the gap along both directions is nonzero at low temperatures and that the ratio is strongly temperature dependent. We show, using Ginzburg-Landau theory, that this behavior can be obtained if one assumes the existence of s-wave and d-wave components for the order parameter. Our theory predicts orthorhombic anisotropy in the gap and anomalous behavior for the electronic specific heat below T$_c$.

0 citations0 reviewsNo code linkedOpen access