Researcher profile

R. J. Young

R. J. Young contributes to research discovery and scholarly infrastructure.

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Published work

8 published item(s)

preprint2016arXiv

Using Quantum Confinement to Uniquely Identify Devices

Modern technology unintentionally provides resources that enable the trust of everyday interactions to be undermined. Some authentication schemes address this issue using devices that give unique outputs in response to a challenge. These signatures are generated by hard-to-predict physical responses derived from structural characteristics, which lend themselves to two different architectures, known as unique objects (UNOs) and physically unclonable functions (PUFs). The classical design of UNOs and PUFs limits their size and, in some cases, their security. Here we show that quantum confinement lends itself to the provision of unique identities at the nanoscale, by using fluctuations in tunnelling measurements through quantum wells in resonant tunnelling diodes (RTDs). This provides an uncomplicated measurement of identity without conventional resource limitations whilst providing robust security. The confined energy levels are highly sensitive to the specific nanostructure within each RTD, resulting in a distinct tunnelling spectrum for every device, as they contain a unique and unpredictable structure that is presently impossible to clone. This new class of authentication device operates with few resources in simple electronic structures above room temperature.

preprint2011arXiv

AlGaAs/GaAs/AlGaAs quantum wells as a sensitive tool for the MOVPE reactor environment

We present in this work a simple Quantum Well (QW) structure consisting of GaAs wells with AlGaAs barriers as a probe for measuring the performance of arsine purifiers within a MetalOrganic Vapour Phase Epitaxy system. Comparisons between two different commercially available purifiers are based on the analysis of low temperature photoluminescence emission spectra from thick QWs, grown on GaAs substrates misoriented slightly from (100). Neutral excitons emitted from these structures show extremely narrow linewidths, comparable to those which can be obtained by Molecular Beam Epitaxy in an ultra-high vacuum environment, suggesting that purifications well below the 1ppb level are needed to achieve high quality quantum well growth.

preprint2010arXiv

A novel site-controlled quantum dot system with high uniformity and narrow excitonic emission

We report on the optical properties of a newly developed site-controlled InGaAs Dots in GaAs barriers grown in pre-patterned pyramidal recesses by metalorganic vapour phase epitaxy. The inhomogeneous broadening of excitonic emission from an ensemble of quantum dots is found to be extremely narrow, with a standard deviation of 1.19 meV. A dramatic improvement in the spectral purity of emission lines from individual dots is also reported (18-30 ueV) when compared to the state-of-the-art for site controlled quantum dots.

preprint2010arXiv

Interfacial Stress Transfer in a Graphene Monolayer Nanocomposite

Graphene is one of the stiffest known materials, with a Young's modulus of 1 TPa, making it an ideal candidate for use as a reinforcement in high-performance composites. However, being a one-atom thick crystalline material, graphene poses several fundamental questions: (1) can decades of research on carbon-based composites be applied to such an ultimately-thin crystalline material? (2) is continuum mechanics used traditionally with composites still valid at the atomic level? (3) how does the matrix interact with the graphene crystals and what kind of theoretical description is appropriate? We have demonstrated unambiguously that stress transfer takes place from the polymer matrix to monolayer graphene, showing that the graphene acts as a reinforcing phase. We have also modeled the behavior using shear-lag theory, showing that graphene monolayer nanocomposites can be analyzed using continuum mechanics. Additionally, we have been able to monitor stress transfer efficiency and breakdown of the graphene/polymer interface.

preprint2010arXiv

Quantum Memories. A Review based on the European Integrated Project "Qubit Applications (QAP)"

We perform a review of various approaches to the implementation of quantum memories, with an emphasis on activities within the quantum memory sub-project of the EU Integrated Project "Qubit Applications". We begin with a brief overview over different applications for quantum memories and different types of quantum memories. We discuss the most important criteria for assessing quantum memory performance and the most important physical requirements. Then we review the different approaches represented in "Qubit Applications" in some detail. They include solid-state atomic ensembles, NV centers, quantum dots, single atoms, atomic gases and optical phonons in diamond. We compare the different approaches using the discussed criteria.

preprint2009arXiv

A site-controlled quantum dot system offering both high uniformity and spectral purity

In this paper we report on the optical properties of site controlled InGaAs dots with GaAs barriers grown in pyramidal recesses by metalorganic vapour phase epitaxy. The inhomogeneous broadening of excitonic emission from an ensemble of quantum dots is found to be unusually narrow, with a standard deviation of 1.19 meV, and spectral purity of emission lines from individual dots is found to be very high (18-30 ueV), in contrast with other site-controlled systems.

preprint2008arXiv

Bell-inequality violation with a triggered photon-pair source

Here we demonstrate, for the first time, violation of Bell's inequality using a triggered quantum dot photon-pair source without post-selection. Furthermore, the fidelity to the expected Bell state can be increased above 90% using temporal gating to reject photons emitted at times when collection of uncorrelated light is more probable. A direct measurement of a CHSH Bell inequality is made showing a clear violation, highlighting that a quantum dot entangled photon source is suitable for communication exploiting non-local quantum correlations.

preprint2006arXiv

Control of fine-structure splitting of individual InAs quantum dots by rapid thermal annealing

Degeneracy of the bright single exciton spin state is a prerequisite for the production of triggered polarization-entangled photon pairs from the biexciton decay of a quantum dot. Normally, however, the exciton spin states are split due to in-plane asymmetries. Here we demonstrate that the exciton splitting of an individual dot can be tuned through zero by thermal annealing. Repeated annealing blueshifts the exciton emission line of the dot, accompanied by a reduction and inversion in polarization splitting. Annealing is also demonstrated to control the detuning between the exciton and biexciton transitions in any selected dot.