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R. Hobara

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cond-mat.mes-hall cond-mat.mtrl-sci cond-mat.supr-con

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preprint2020arXiv

Controlling of the Dirac band states of Pb-deposited graphene by using work function difference

We have performed scanning tunneling microscope (STM) and angle-resolved photoemission spectroscopy (ARPES) in Pb-deposited bilayer Graphene (BLG) on SiC(0001) substrate to investigate the dependence of the electronic structures on Pb-deposition amount. We have observed that the Pb atoms form islands by STM and the $π$ bands of the BLG shift toward the Fermi level by ARPES. This hole-doping-like energy shift is enhanced as the amount of Pb is increased, and we were able to tune the Dirac gap to the Fermi level by 4 ML deposition. Considering the band dispersion, we suggest that hole-doping-like effect is related to the difference between the work functions of Pb islands and BLG/SiC; the work function of BLG/SiC is lower than that of Pb. Our results propose an easy way of band tuning for graphene with appropriate selection of both the substrate and deposited material.

preprint2020arXiv

Superconducting proximity effect in a Rashba-type surface state of Pb/Ge(111)

The Rashba superconductor, in which spin-splitting bands become superconducting, is fascinating as a novel superconducting system in low dimensional systems. Here, we present the results of $\textit{in-situ}$ transport measurements on a Rashba-type surface state of the striped incommensurate (SIC) phase of a Pb atomic layer on Ge(111) surface with additional Pb islands/clusters on it. We found that two-step superconducting transitions at around 7 K and 3 K occurred. The latter superconducting transition is suggested to be induced at the non-superconducting Rashba SIC area because of the lateral proximity effect caused by the superconducting Pb clusters. Our results propose a new type of Rashba superconductor, which is a new platform to understand the Rashba superconducting systems.

preprint2019arXiv

Two-dimensional conducting layer on SrTiO$_{3}$ surface induced by hydrogenation

We found that a surface state induced by hydrogenation on the surface of SrTiO$_{3}$(001) (STO) did not obey the rigid band model, which was confirmed by in situ electrical resistivity measurements in ultrahigh vacuum. With exposure of atomic hydrogen on the STO, a new surface state (H-induced donor state, HDS) appears within the bulk band gap (an in-gap state), which donates electrons thermally activated to the bulk conduction band, resulting in downward bending of the bulk bands beneath the surface. The doped electrons flow through the space-charge layer in two-dimensional manner parallel to the surface. The observed semiconducting behavior in the temperature dependence of electronic transport is explained by the thermal activation of carriers. The HDS and the bulk conduction band are non-rigid in energy position; they come closer with increasing the hydrogen adsorption. Eventually the HDS saturates its position around 88 meV below the bottom of the bulk conduction band. The sheet conductivity, accordingly, also saturates at 1.95$\pm$ 0.02 $μ$ S/sq. with increasing hydrogen adsorption, corresponding to completion of the hydrogenation of the surface.