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R. Harper

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quant-ph cond-mat.mes-hall hep-ph

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preprint2021arXiv

Fast Bayesian tomography of a two-qubit gate set in silicon

Benchmarking and characterising quantum states and logic gates is essential in the development of devices for quantum computing. We introduce a Bayesian approach to self-consistent process tomography, called fast Bayesian tomography (FBT), and experimentally demonstrate its performance in characterising a two-qubit gate set on a silicon-based spin qubit device. FBT is built on an adaptive self-consistent linearisation that is robust to model approximation errors. Our method offers several advantages over other self-consistent tomographic methods. Most notably, FBT can leverage prior information from randomised benchmarking (or other characterisation measurements), and can be performed in real time, providing continuously updated estimates of full process matrices while data is acquired.

preprint2020arXiv

Silicon qubit fidelities approaching incoherent noise limits via pulse engineering

The performance requirements for fault-tolerant quantum computing are very stringent. Qubits must be manipulated, coupled, and measured with error rates well below 1%. For semiconductor implementations, silicon quantum dot spin qubits have demonstrated average single-qubit Clifford gate error rates that approach this threshold, notably with error rates of 0.14% in isotopically enriched $^{28}$Si/SiGe devices. This gate performance, together with high-fidelity two-qubit gates and measurements, is only known to meet the threshold for fault-tolerant quantum computing in some architectures when assuming that the noise is incoherent, and still lower error rates are needed to reduce overhead. Here we experimentally show that pulse engineering techniques, widely used in magnetic resonance, improve average Clifford gate error rates for silicon quantum dot spin qubits to 0.043%,a factor of 3 improvement on previous best results for silicon quantum dot devices. By including tomographically complete measurements in randomised benchmarking, we infer a higher-order feature of the noise called the unitarity, which measures the coherence of noise. This in turn allows us to theoretically predict that average gate error rates as low as 0.026% may be achievable with further pulse improvements. These fidelities are ultimately limited by Markovian noise, which we attribute to charge noise emanating from the silicon device structure itself, or the environment.

preprint2015arXiv

Non-exponential Fidelity Decay in Randomized Benchmarking with Low-Frequency Noise

We show that non-exponential fidelity decays in randomized benchmarking experiments on quantum dot qubits are consistent with numerical simulations that incorporate low-frequency noise. By expanding standard randomized benchmarking analysis to this experimental regime, we find that such non-exponential decays are better modeled by multiple exponential decay rates, leading to an instantaneous control fidelity for isotopically-purified-silicon MOS quantum dot qubits which can be as high as 99.9% when low-frequency noise conditions and system calibrations are favorable. These advances in qubit characterization and validation methods underpin the considerable prospects for silicon as a qubit platform for fault-tolerant quantum computation.

preprint2004arXiv

Prospects for the Search for a Standard Model Higgs Boson in ATLAS using Vector Boson Fusion

The potential for the discovery of a Standard Model Higgs boson in the mass range m_H < 2 m_Z in the vector boson fusion mode has been studied for the ATLAS experiment at the LHC. The characteristic signatures of additional jets in the forward regions of the detector and of low jet activity in the central region allow for an efficient background rejection. Analyses for the H -> WW and H -> tau tau decay modes have been performed using a realistic simulation of the expected detector performance. The results obtained demonstrate the large discovery potential in the H -> WW decay channel and the sensitivity to Higgs boson decays into tau-pairs in the low-mass region around 120 GeV.