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Researcher profile

R. F. Sabirianov

R. F. Sabirianov contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.mes-hallBiological PhysicsBiomoleculesphysics.chem-ph

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Published work

5 published item(s)

preprint2014arXiv

Effect of Dielectric Properties of Ceramic-Solvent Interface on the Binding of Protein to Oxide Ceramics: a Non Local Electrostatic Approach

The contribution of electrostatic interactions to the free energy of binding between model protein and a ceramic implant surface in the aqueous solvent, considered in the framework of the non-local electrostatic model, is calculated as a function of the implant low-frequency dielectric constant. We show that the existence of a dynamically ordered (low-dielectric) interfacial solvent layer at the protein-solvent and ceramic-solvent interface markedly increases charging energy of the protein and ceramic implant, and consequently makes the electrostatic contribution to the protein-ceramic binding energy more favorable (attractive). Our analysis shows that the corresponding electrostatic energy between protein and oxide ceramics depends non-monotonically on the dielectric constant of ceramic. Obtained results indicate that protein can attract electrostatically to the surface if ceramic material has a moderate dielectric constant below or about 35 (in particularly ZrO2 or Ta2O5). This is in contrast to classical (local) consideration of the solvent, which demonstrates an unfavorable electrostatic interaction of protein with typical metal oxide ceramic materials (dielectric constant>10). Thus, a solid implant coated by combining oxide ceramic with a reduced dielectric constant can be beneficial to strengthen the electrostatic binding of the protein-implant complex.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Transport Spin Polarization of High-Curie Temperature MnBi Films

We report on the study of the structural, magnetic and transport properties of highly textured MnBi films with the Curie temperature of 628K. In addition to detailed measurements of resistivity and magnetization, we measure transport spin polarization of MnBi by Andreev reflection spectroscopy and perform fully relativistic band structure calculations of MnBi. A spin polarization from 51\pm1 to 63\pm1% is observed, consistent with the calculations and with an observation of a large magnetoresistance in MnBi contacts. The band structure calculations indicate that, in spite of almost identical densities of states at the Fermi energy, the large disparity in the Fermi velocities leads to high transport spin polarization of MnBi. The correlation between the values of magnetization and spin polarization is discussed.

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preprint2009arXiv

First-principles analysis of spin-disorder resistivity of Fe and Ni

Spin-disorder resistivity of Fe and Ni and its temperature dependence are analyzed using noncollinear density functional calculations within the supercell method. Different models of thermal spin disorder are considered, including the mean-field approximation and the nearest-neighbor Heisenberg model. Spin-disorder resistivity is found to depend weakly on magnetic short-range order. If the local moments are kept frozen at their zero-temperature values, very good agreement with experiment is obtained for Fe, but for Ni the resistivity at elevated temperatures is significantly overestimated. Agreement with experiment for Fe is improved if the local moments are iterated to self-consistency. The overestimation of the resistivity for paramagnetic Ni is attributed to the reduction of the local moments down to 0.35 Bohr magnetons. Overall, the results suggest that low-energy spin fluctuations in Fe and Ni are better viewed as classical rotations of local moments rather than quantized spin fluctuations that would require an (S+1)/S correction.

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preprint2007arXiv

The Origin of Tunneling Anisotropic Magnetoresistance in Break Junctions

First-principles calculations of electron tunneling transport in Ni and Co break junctions reveal strong dependence of the conductance on the magnetization direction, an effect known as tunneling anisotropic magnetoresistance (TAMR). The origin of this phenomenon stems from resonant states localized in the electrodes near the junction break. The energy and broadening of these states is strongly affected by the magnetization orientation due to spin-orbit coupling, causing TAMR to be sensitive to bias voltage on a scale of a few mV. Our results bear a resemblance to recent experimental data and suggest that TAMR driven by resonant states is a general phenomenon typical for magnetic broken contacts and other experimental geometries where a magnetic tip is used to probe electron transport.

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preprint2004arXiv

Ballistic anisotropic magnetoresistance

Electronic transport in ferromagnetic ballistic conductors is predicted to exhibit ballistic anisotropic magnetoresistance (BAMR) - a change in the ballistic conductance with the direction of magnetization. This phenomenon originates from the effect of the spin-orbit interaction on the electronic band structure which leads to a change in the number of bands crossing the Fermi energy when the magnetization direction changes. We illustrate the significance of this phenomenon by performing ab-initio calculations of the ballistic conductance in ferromagnetic Ni and Fe nanowires which display a sizable BAMR when the magnetization changes direction from parallel to perpendicular to the wire axis.

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