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R. Chris Bowen

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cond-mat.mtrl-sci

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preprint2016arXiv

Lower limits of line resistance in nanocrystalline Back End of Line Cu interconnects

The strong non-linear increase in Cu interconnect line resistance with a decrease in linewidth presents a significant obstacle to their continued downscaling. In this letter we use first principles density functional theory based electronic structure of Cu interconnects to find the lower limits of their line resistance for metal linewidths corresponding to future technology nodes. We find that even in the absence of scattering due to grain boundaries, edge roughness or interfaces, quantum confinement causes a severe reduction in current carrying capacity of Cu. We discuss the causes of transport orientation dependent anisotropy of quantum confinement in Cu. We also find that when the simplest scattering mechanism in the grain boundary scattering dominated limit is added to otherwise coherent electronic transmission in monocrystalline nanowires, the lower limits of line resistance are significantly higher than projected roadmap requirements in the International Technology Roadmap for Semiconductors.

preprint2016arXiv

Machine-learned approximations to Density Functional Theory Hamiltonians

Large scale Density Functional Theory (DFT) based electronic structure calculations are highly time consuming and scale poorly with system size. While semi-empirical approximations to DFT result in a reduction in computational time versus ab initio DFT, creating such approximations involves significant manual intervention and is highly inefficient for high-throughput electronic structure screening calculations. In this letter, we propose the use of machine-learning for fast and accurate prediction of DFT Hamiltonians. Using suitable representations of atomic neighborhoods and Kernel Ridge Regression, we show that an accurate and transferable prediction of DFT Hamiltonians for a variety of material environments can be achieved. Electronic transmission spectra computed using predicted Hamiltonians compare accurately with their DFT counterparts. The method is independent of the specifics of the DFT basis or material system used and can easily be automated and scaled for predicting Hamiltonians of any material system of interest.

preprint2015arXiv

On the feasibility of ab initio electronic structure calculations for Cu using a single s orbital basis

The accuracy of a single s-orbital representation of Cu towards enabling multi-thousand atom ab initio calculations of electronic structure is evaluated in this work. If an electrostatic compensation charge of approximately 0.3 electrons per atom is used in this basis representation of copper, the electronic transmission in bulk and nanocrystalline Cu compares accurately to that obtained with a Double Zeta Polarized basis set. The use of this representation is analogous to the use of single band effective mass representation for semiconductor electronic structure. With a basis of just one s-orbital per Cu atom, the representation is extremely computationally efficient and can be used to provide much needed ab initio insight into electronic transport in nanocrystalline Cu interconnects at realistic dimensions.

preprint2014arXiv

Effect of realistic metal electronic structure on the lower limit of contact resistivity of epitaxial metal-semiconductor contacts

The effect of realistic metal electronic structure on the lower limit of resistivity in [100] oriented n-Si is investigated using full band Density Functional Theory and Semi-Empirical Tight Binding (TB) calculations. Using simulation unit cells guided by the interface chemistry of epitaxial CoSi2 on [100] oriented Si observed experimentally, it is shown that the 'ideal metal' assumption fails in some situations and consequently underestimates the lower limit of contact resistivity in n-Si by at least an order of magnitude at high doping concentrations. The mismatch in transverse momentum space in the metal and the semiconductor, the so-called 'valley filtering effect', is shown to be dependent on the interface chemistry simulated. The results emphasize the need for explicit inclusion of the metal atomic and electronic structure in the atomistic modeling of transport across metal-semiconductor contacts