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Researcher profile

R. C. Roundy

R. C. Roundy contributes to research discovery and scholarly infrastructure.

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Published work

10 published item(s)

preprint2014arXiv

Manifestation of two-channel nonlocal spin transport in the shapes of the Hanle curves

Dynamics of charge-density fluctuations in a system of two tunnel-coupled wires contains two diffusion modes with dispersion iw=Dq^2 and iw =Dq^2+2/tau_t, where D is the diffusion coefficient and tau_t is the tunneling time between the wires. The dispersion of corresponding spin-density modes depends on magnetic field as a result of spin precession with Larmour frequency, w_L. The presence of two modes affects the shape of the Hanle curve describing the spin-dependent resistance, R, between ferromagnetic strips covering the non-magnetic wires. We demonstrate that the relative shapes of the R(w_L)-curves, one measured within the same wire and the other measured between the wires, depends on the ratio tau_t/tau_s, where tau_s is the spin-diffusion time. If the coupling between the wires is local, i.e. only at the point x=0, then the difference of the shapes of intra-wire and inter-wire Hanle curves reflects the difference in statistics of diffusive trajectories which "switch" or do not switch near x=0. When one of the coupled wires is bent into a loop with a radius, a, the shape of the Hanle curve reflects the statistics of random walks on the loop. This statistics is governed by the dimensionless parameter, a/(D tau_s)^(1/2).

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Spin injection from a ferromagnet into a semiconductor in the case of a rough interface

The effect of the interface roughness on the spin injection from a ferromagnet into a semiconductor is studied theoretically. Even a small interface irregularity can lead to a significant enhancement of the injection efficiency. When a typical size of the irregularity, a, is within a domain lambda_F << a << lambda_N, where lambda_F and lambda_N are the spin-diffusion lengths in the ferromagnet and semiconductor, respectively, the geometrical enhancement factor is ~lambda_N. The origin of the enhancement is the modification of the local electric field on small scales ~a near the interface. We demonstrate the effect of enhancement by considering a number of analytically solvable examples of injection through curved ferromagnet-semiconductor interfaces. For a generic curved interface the enhancement factor is ~lambda_N / R, where R is the local radius of curvature.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Spin relaxation of a diffusively moving carrier in a random hyperfine field

Relaxation, <Sz(t)>, of the average spin of a carrier in course of hops over sites hosting random hyperfine fields is studied theoretically. In low dimensions, d = 1, 2, the decay of average spin with time is non-exponential at all times. The origin of the effect is that for d = 1, 2 a typical random-walk trajectory exhibits numerous self-intersections. Multiple visits of the carrier to the same site accelerates the relaxation since the corresponding partial rotations of spin during these visits add up. Another consequence of self-intersections of the random-walk trajectories is that, in all dimensions, the average, <Sz(t)>, becomes sensitive to a weak magnetic field directed along z. Our analytical predictions are complemented by the numerical simulations of <Sz(t)>.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Spin transport with traps: dramatic narrowing of the Hanle curve

We study theoretically the spin transport in a device in which the active layer is an organic film with numerous deep in-gap levels serving as traps. A carrier, diffusing between magnetized injector and detector, spends a considerable portion of time on the traps. This new feature of transport does not affect the giant magnetoresistance, which is sensitive only to the mutual orientation of magnetizations of the injector and detector. By contrast, the presence of traps strongly affects the sensitivity of the spin transport to external magnetic field perpendicular to the magnetizations of the electrodes (the Hanle effect). Namely, the Hanle curve narrows dramatically. The origin of such a narrowing is that the spin precession takes place during the entire time of the carrier motion between the electrodes, while the spin relaxation takes place only during diffusive motion between the subsequent traps. If the resulting width of the Hanle curve is smaller than the measurement resolution, observation of the Hanle peak becomes impossible.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

The shape of the Hanle curve in spin-transport structures in the presence of the ac drive

Resistance between two ferromagnetic electrodes coupled to a normal channel depends on their relative magnetizations. The spin-dependent component, R, of the resistance changes with magnetic field, B, normal to the directions of magnetizations. In the field of spin transport, this change, R(B), originating from the Larmour spin precession, is called the Hanle curve. We demonstrate that the shape of the Hanle curve evolves upon application of an ac drive and study this evolution theoretically as a function of the amplitude, B_1, and frequency, w, of the drive. If the distance between the electrodes, L, is smaller than the spin-diffusion length, l_s, the prime effect of a weak circular-polarized drive is the shift of the center of the curve to the value of B for which the Larmour frequency, w_L, is ~B_1^2 w. Magnetic resonance at w_L~w manifests itself in the derivative, dR/dB. For large L >> l_s the ac drive affects the Hanle curve if the drive amplitude exceeds the spin relaxation rate, 1/t_s, i.e. at B_1 t_s > 1. The prime effect of the drive is the elimination of a minimum in R(B). Linearly polarized drive has a fundamentally different effect on the Hanle curve, affecting not its shape, but rather its width.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Giant fluctuations of local magnetoresistance of organic spin valves and non-hermitian 1D Anderson model

Motivated by recent experiments, where the tunnel magnetoresitance (TMR) of a spin valve was measured locally, we theoretically study the distribution of TMR along the surface of magnetized electrodes. We show that, even in the absence of interfacial effects (like hybridization due to donor and acceptor molecules), this distribution is very broad, and the portion of area with negative TMR is appreciable even if on average the TMR is positive. The origin of the local sign reversal is quantum interference of subsequent spin-rotation amplitudes in course of incoherent transport of carriers between the source and the drain. We find the distribution of local TMR exactly by drawing upon formal similarity between evolution of spinors in time and of reflection coefficient along a 1D chain in the Anderson model. The results obtained are confirmed by the numerical simulations.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Organic magnetoresistance near saturation: mesoscopic effects in small devices

In organic light emitting diodes with small area the current may be dominated by a finite number, N of sites in which the electron-hole recombination occurs. As a result, averaging over the hyperfine magnetic fields, b_h, that are generated in these sites by the environment nuclei is incomplete. This creates a random (mesoscopic) current component, ΔI(B), at field B having relative magnitude ~ N^(-1/2). To quantify the statistical properties of ΔI(B) we calculate the correlator K(B, ΔB)= <δI(B - ΔB/2)δI(B + ΔB/2)> for parallel and perpendicular orientations of ΔB. We demonstrate that mesoscopic fluctuations develop at fields B>>b_h, where the average magnetoresistance is near saturation. These fluctuations originate from the slow beating between S and T_0 states of the recombining e-h spin pair-partners. We identify the most relevant processes responsible for the current fluctuations as due to anomalously slow beatings that develop in sparse e-h polaron pairs at sites for which the b_h projections on the external field direction almost coincide.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Organic magnetoresistance under resonant ac drive

We study the spin dynamics of an electron-hole pair in a random hyperfine magnetic field and an external field, B0, under a resonant drive with frequency omega0 = gamma B0. The fact that the pair decays by recombination exclusively from a singlet configuration, S, in which the spins of the pair-partners are entangled, makes this dynamics highly nontivial. Namely, as the amplitude, B1, of the driving field grows, mixing all of the triplet components, the long-living modes do not disappear, but evolve from T+, T- into (T+ +/- sqrt(2) T0 + T-)/2. Upon further increase of B1, the lifetime of the S-mode is cut in half, while the T0-mode transforms into an antisymmetric combination (T- - T-)/sqrt(2) and acquires a long lifetime, in full analogy to the superradiant and subradiant modes in the Dicke effect. Peculiar spin dynamics translates into a peculiar dependence on B1. In particular, at small B1, the radiation-induced correction to the current is linear in B1.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Slow dynamics of spin pairs in random hyperfine field: Role of inequivalence of electrons and holes in organic magnetoresistance

In an external magnetic field B, the spins of the electron and hole will precess in effective fields b_e + B and b_h + B, where b_e and b_h are random hyperfine fields acting on the electron and hole, respectively. For sparse &#34;soft&#34; pairs the magnitudes of these effective fields coincide. The dynamics of precession for these pairs acquires a slow component, which leads to a slowing down of recombination. We study the effect of soft pairs on organic magnetoresistance, where slow recombination translates into blocking of the passage of current. It appears that when b_e and b_h have identical gaussian distributions the contribution of soft pairs to the current does not depend on B. Amazingly, small inequivalence in the rms values of b_e and b_h gives rise to a magnetic field response, and it becomes progressively stronger as the inequivalence increases. We find the expression for this response by performing the averaging over b_e, b_h analytically. Another source of magnetic field response in the regime when current is dominated by soft pairs is inequivalence of the g-factors of the pair partners. Our analytical calculation indicates that for this mechanism the response has an opposite sign.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Tunnel magnetoresistance in organic spin valves in the regime of multi-step tunneling

A model of a spin valve in which electron transport between the magnetized electrodes is due to multistep tunneling is analyzed. Motivated by recent experiments on organic spin valves, we assume that spin memory loss in the course of transport is due to random hyperfine fields acting on electron while it waits for the next tunneling step. Amazingly, we identify the three-step configurations of sites, for which the tunnel magnetoresistance (TMR) is negative, suggesting that the resistance for antiparallel magnetizations of the electrodes is smaller than for parallel magnetizations. We analyze the phase volume of these configurations with respect to magnitudes and relative orientations of the on-site hyperfine fields. The effect of sign reversal of TMR is exclusively due to interference of the spin-flip amplitudes on each site, it does not emerge within commonly accepted probabilistic description of spin transport. Another feature specific to multistep inelastic tunneling is bouncing of electron between nearest neighbors while awaiting a &#34;hard&#34; hop. We demonstrate that this bouncing, being absolutely insignificant for conduction of current, can strongly affect the spin memory loss. This effect is also of interference origin.

0 citations0 reviewsNo code linkedOpen access