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Source author record

R. Bertacco

R. Bertacco appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
cond-mat.mtrl-sciBiological Physicscond-mat.mes-hall

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Published work

7 published item(s)

preprint2014arXiv

Tetragonal phase of epitaxial room-temperature antiferromagnet CuMnAs

Recent studies have demonstrated the potential of antiferromagnets as the active component in spintronic devices. This is in contrast to their current passive role as pinning layers in hard disk read heads and magnetic memories. Here we report the epitaxial growth of a new high-temperature antiferromagnetic material, tetragonal CuMnAs, which exhibits excellent crystal quality, chemical order and compatibility with existing semiconductor technologies. We demonstrate its growth on the III-V semiconductors GaAs and GaP, and show that the structure is also lattice matched to Si. Neutron diffraction shows collinear antiferromagnetic order with a high Neél temperature. Combined with our demonstration of room-temperature exchange coupling in a CuMnAs/Fe bilayer, we conclude that tetragonal CuMnAs films are suitable candidate materials for antiferromagnetic spintronics.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Storing magnetic information in IrMn/MgO/Ta tunnel junctions via field-cooling

Tunneling junctions containing no ferromagnetic elements have been fabricated and we show that distinct resistance states can be set by field cooling the devices from above the Néel along different orientations. Variations of the resistance up to 10% are found upon field cooling in applied fields of 2T, in-plane or out of plane. Below TN, we found that the metastable states are insensitive to magnetic fields thus constituting a memory element robust against external magnetic fields. Our work provides the demonstration of an electrically readable magnetic memory device, which contains no ferromagnetic elements and stores the information in an antiferromagnetic active layer.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Direct observation of a highly spin-polarized organic spinterface at room temperature

The design of large-scale electronic circuits that are entirely spintronics-driven requires a current source that is highly spin-polarised at and beyond room temperature, cheap to build, efficient at the nanoscale and straightforward to integrate with semiconductors. Yet despite research within several subfields spanning nearly two decades, this key building block is still lacking. We experimentally and theoretically show how the interface between Co and phthalocyanine molecules constitutes a promising candidate. Spin-polarised direct and inverse photoemission experiments reveal a high degree of spin polarisation at room temperature at this interface. We measured a magnetic moment on the molecules's nitrogen pi orbitals, which substantiates an ab-initio theoretical description of highly spin-polarised charge conduction across the interface due to differing spinterface formation mechanims in each spin channel. We propose, through this example, a recipe to engineer simple organic-inorganic interfaces with remarkable spintronic properties that can endure well above room temperature.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Electrical detection of optically pumped spin polarization in Ge

Here we show the room temperature integrated detection of the helicity of photons with 1300 nm wavelength, via spin- photodiodes based on fully epitaxial Fe/MgO/Ge(001) heterostructures. These devices convert the photon helicity in a variation of the photocurrent (ΔI) for opposite orientations of the Fe magnetization. We found ΔI on the order of 5.9% for 100% circularly polarized light, both in the forward and the reverse bias, with a contribution of 0.8% from the Fe dichroic light absorption and of 5.1% from the spin filtering of photo-generated carriers crossing the Fe/MgO/Ge tunneling barrier.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

On-chip manipulation of magnetic nanoparticles through domain walls conduits

The manipulation of geometrically constrained magnetic domain walls (DWs) in nanoscale magnetic strips has attracted much interest recently, with proposals for prospective memory and logic devices. Here we propose to use the high controllability of the motion of geometrically constrained DWs for the manipulation of individual nanoparticles on a chip with an active control of position at the nanometer scale. The proposed method exploits the fact that magnetic nanoparticles in solution can be captured by a DW, whose position can be manipulated with nanometric accuracy in a specifically designed magnetic nanowire structure. We show that the high control over DW nucleation, displacement, and annihilation processes in such structures can be used to capture, transport and release magnetic nanoparticles. As magnetic particles with functionalized surfaces are commonly used as molecule carriers or labels, the accurate control over the handling of the single magnetic nanoparticle is crucial for several applications including single molecule manipulation, separation, cells manipulation and biomagnetic sensing.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

On-chip nano-manipulation of magnetic particles via domain walls conduits

The manipulation of geometrically constrained magnetic domain walls (DWs) in nanoscale magnetic strips has attracted much interest recently, with proposals for prospective memory and logic devices. Here we propose to use the high controllability of the motion of geometrically constrained DWs for the manipulation of individual nanoparticles on a chip with an active control of position at the nanometer scale. The proposed method exploits the fact that magnetic nanoparticles in solution can be captured by a DW, whose position can be manipulated with nanometric accuracy in a specifically designed magnetic nanowire structure. We show that the high control over DW nucleation, displacement, and annihilation processes in such structures can be used to capture, transport and release magnetic nanoparticles. As magnetic particles with functionalized surfaces are commonly used as molecule labels in several applications - including single molecule manipulation, separation, cells manipulation and biomagnetic sensing, the accurate control over the handling of the single magnetic nanoparticles becomes crucial as it may reflect the handling of the single molecules. The approach described here opens the path to the implementation and design of nano-transport lines, with application to single molecule study and lab-on-chip devices. In perspective, the easy integration on chip with sensors of domain walls and particles will allow for the realization of programmable circuits for molecular manipulation with continuous control of the desired process.

0 citations0 reviewsNo code linkedOpen access
preprint2005arXiv

Spin-polarized tunneling spectroscopy in tunnel junctions with half-metallic electrodes

We have studied the magnetoresistance (TMR) of tunnel junctions with electrodes of La2/3Sr1/3MnO3 and we show how the variation of the conductance and TMR with the bias voltage can be exploited to obtain a precise information on the spin and energy dependence of the density of states. Our analysis leads to a quantitative description of the band structure of La2/3Sr1/3MnO3 and allows the determination of the gap delta between the Fermi level and the bottom of the t2g minority spin band, in good agreement with data from spin-polarized inverse photoemission experiments. This shows the potential of magnetic tunnel junctions with half-metallic electrodes for spin-resolved spectroscopic studies.

0 citations0 reviewsNo code linkedOpen access