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Researcher profile

R. Ahmad

R. Ahmad contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sciastro-ph.SR

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Published work

3 published item(s)

preprint2011arXiv

Cr doped III-V nitrides: potential candidates for spintronics

Studies of Cr-doped III-V nitrides, dilute magnetic alloys, in the zinc-blende crystal structure are presented. The objective of the work is to investigate half-metallicity in Al(0.75)Cr(0.25)N, Ga(0.75)Cr(0.25)N and In(0.75)Cr(0.25)N for their possible application in the spin based electronic devices. The calculated spin polarized band structures, electronic properties and magnetic properties of these compounds reveal that Al0.75Cr0.25N and Ga0.75Cr0.25N are half-metallic dilute magnetic semiconductors while In0.75Cr0.25N is metallic in nature. The present theoretical predictions provide evidence that some Cr doped III-V nitrides can be used in spintronics devices.

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preprint2011arXiv

Young Exoplanet Transit Initiative (YETI)

We present the Young Exoplanet Transit Initiative (YETI), in which we use several 0.2 to 2.6m telescopes around the world to monitor continuously young (< 100 Myr), nearby (< 1 kpc) stellar clusters mainly to detect young transiting planets (and to study other variability phenomena on time-scales from minutes to years). The telescope network enables us to observe the targets continuously for several days in order not to miss any transit. The runs are typically one to two weeks long, about three runs per year per cluster in two or three subsequent years for about ten clusters. There are thousands of stars detectable in each field with several hundred known cluster members, e.g. in the first cluster observed, Tr-37, a typical cluster for the YETI survey, there are at least 469 known young stars detected in YETI data down to R=16.5 mag with sufficient precision of 50 milli-mag rms (5 mmag rms down to R=14.5 mag) to detect transits, so that we can expect at least about one young transiting object in this cluster. If we observe 10 similar clusters, we can expect to detect approximately 10 young transiting planets with radius determinations. The precision given above is for a typical telescope of the YETI network, namely the 60/90-cm Jena telescope (similar brightness limit, namely within +/-1 mag, for the others) so that planetary transits can be detected. For planets with mass and radius determinations, we can calculate the mean density and probe the internal structure. We aim to constrain planet formation models and their time-scales by discovering planets younger than 100 Myr and determining not only their orbital parameters, but also measuring their true masses and radii, which is possible so far only by the transit method. Here, we present an overview and first results. (Abstract shortened)

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preprint2010arXiv

Ab-initio study of the bandgap engineering of Al(1-x)Ga(x)N for optoelectronic applications

A theoretical study of Al(1-x)Ga(x)N, based on full-potential linearized augmented plane wave method, is used to investigate the variations in the bandgap, optical properties and non-linear behavior of the compound with the variation of Ga concentration. It is found that the bandgap decreases with the increase of Ga in Al(1-x)Ga(x)N. A maximum value of 5.5 eV is determined for the bandgap of pure AlN which reaches to minimum value of 3.0 eV when Al is completely replaced by Ga. The static index of refraction and dielectric constant decreases with the increase in bandgap of the material, assigning a high index of refraction to pure GaN when compared to pure AlN. The refractive index drops below 1 for photon energies larger than 14 eV results group velocity of the incident radiation higher than the vacuum velocity of light. This astonishing result shows that at higher energies the optical properties of the material shifts from linear to non-linear. Furthermore, frequency dependent reflectivity and absorption coefficients show that peak value of the absorption coefficient and reflectivity shifts towards lower energy in the UV spectrum with the increase in Ga concentration. This comprehensive theoretical study of the optoelectronic properties of the alloys is presented for the first time which predicts that the material can be effectively used in the optical devices working in the visible and UV spectrum.

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