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Qiyuan He

Qiyuan He appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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Published work

3 published item(s)

preprint2026arXiv

Does Engram Do Memory Retrieval in Autoregressive Image Generation?

The Engram module -- a hash-keyed, O(1) associative memory injected into Transformer layers -- was recently shown to improve large language model pretraining, with the appealing interpretation that it provides a content-addressed shortcut to recurring local token patterns. We ask whether this interpretation transfers to autoregressive (AR) image generation, or whether the observed gains, if any, come from a different mechanism. We adapt the Engram module to vision with 2D spatial $n$-gram hashing, gated fusion, and KV-cache-compatible incremental inference, and inject it into a class-conditional AR generator trained on ImageNet 256x256. Across a sweep of backbone-to-memory budget ratios $ρ{\in}[0.17, 0.90]$, every Engram-augmented variant trails the pure AR baseline in FID, indicating that the module saves backbone FLOPs but does not, by itself, improve sample quality. We then probe how the module is used. A gate-clamp sweep shows that disabling the Engram pathway entirely is catastrophic, yet a tiny constant gate (g=0.10) matches or beats the learned gate -- inconsistent with a heavily content-addressed recall mechanism. A donor-probe experiment shows that swapping the hash inputs for matched, adversarial, or random same-class exemplars produces statistically indistinguishable next-token distributions, while collapsing or randomising the table degrades them by two to three orders of magnitude. Finally, training a model from scratch with the entire memory table frozen to $\mathcal{N}(0, 1)$ noise costs only $Δ\text{FID}{=}0.10$ and actually raises Inception Score. Together, these findings indicate that the Engram in AR image generation behaves not as a content-addressed retriever but as a gated architectural side-pathway: a hash-keyed residual stream whose benefit is dominated by the pathway itself, with the learned table contributing only a small distributional refinement.

preprint2015arXiv

High Current Density Vertical Tunneling Transistors from Graphene/Highly-Doped Silicon Heterostructures

Graphene/silicon heterostructures have attracted tremendous interest as a new platform for diverse electronic and photonic devices such as barristors, solar cells, optical modulators, and chemical sensors. The studies to date largely focus on junctions between graphene and lightly-doped silicon, where a Schottky barrier is believed to dominate the carrier transport process. Here we report a systematic investigation of carrier transport across the heterojunctions formed between graphene and highly-doped silicon. By varying the silicon doping level and the measurement temperature, we show that the carrier transport across the graphene/p++-Si heterojunction is dominated by tunneling effect through the native oxide. We further demonstrate that the tunneling current can be effectively modulated by the external gate electrical field, resulting in a vertical tunneling transistor. Benefited from the large density of states of highly doped silicon, our tunneling transistors can deliver a current density over 20 A/cm2, about two orders of magnitude higher than previous graphene/insulator/graphene tunneling transistor at the same on/off ratio.

preprint2015arXiv

Wafer-scale growth of large arrays of perovskite microplate crystals for functional electronics and optoelectronics

Methylammonium lead iodide perovskite has attracted intensive interest for its diverse optoelectronic applications. However, most studies to date have been limited to bulk thin films that are difficult to implement for integrated device arrays because of their incompatibility with typical lithography processes. We report the first patterned growth of regular arrays of perovskite microplate crystals for functional electronics and optoelectronics. We show that large arrays of lead iodide microplates can be grown from an aqueous solution through a seeded growth process and can be further intercalated with methylammonium iodide to produce perovskite crystals. Structural and optical characterizations demonstrate that the resulting materials display excellent crystalline quality and optical properties. We further show that perovskite crystals can be selectively grown on prepatterned electrode arrays to create independently addressable photodetector arrays and functional field effect transistors. The ability to grow perovskite microplates and to precisely place them at specific locations offers a new material platform for the fundamental investigation of the electronic and optical properties of perovskite materials and opens a pathway for integrated electronic and optoelectronic systems.