Researcher profile

Qiushi Yao

Qiushi Yao contributes to research discovery and scholarly infrastructure.

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Published work

5 published item(s)

preprint2022arXiv

Designing light-element materials with large effective spin-orbit coupling

Spin-orbit coupling (SOC), the core of numerous condensed-matter phenomena such as nontrivial band gap, magnetocrystalline anisotropy, etc, is generally considered to be appreciable only in heavy elements, detrimental to the synthetization and application of functional materials. Therefore, amplifying the SOC effect in light elements is of great importance. Here, focusing on 3d and 4d systems, we demonstrate that the interplay between crystal symmetry and electron correlation can dramatically enhance the SOC effect in certain partially occupied orbital multiplets, through the self-consistently reinforced orbital polarization as a pivot. We then provide design principles and comprehensive databases, in which we list all the Wyckoff positions and site symmetries, in all two-dimensional (2D) and three-dimensional crystals that potentially have such enhanced SOC effect. As an important demonstration, we predict nine material candidates from our selected 2D material pool as high-temperature quantum anomalous Hall insulators with large nontrivial band gaps of hundreds of meV. Our work provides an efficient and straightforward way to predict promising SOC-active materials, releasing the burden of requiring heavy elements for next-generation spin-orbitronic materials and devices.

preprint2021arXiv

Pressure-Driven Magneto-Topological Phase Transition in a magnetic Weyl semimetal

The co-occurrence of phase transitions with local and global order parameters, such as the entangled magnetization and topological invariant, is attractive but has been seldom realized experimentally. Here, by using high-pressure in-situ X-ray diffraction, high-pressure electric transport measurements and high-pressure first-principles calculations, we report a magneto-topological phase transition, i.e., the phenomenon of magnetic materials undergoing different magnetic and topological phases during the process of pressure loading, in a recently discovered magnetic Weyl semimetal Co3Sn2S2. By considering both out-of-plane ferromagnetic and in-plane anti-ferromagnetic components, the calculated results can well fit the experimental data. The calculation results furtherly reveal a pristine Weyl phase with four more pairs of Weyl nodes under low pressures, and a generally-defined Z2 topological insulator phase after the restoration of time-reversal symmetry. Remarkably, the present magneto-topological phase transition involves a pair of crossing bands of two spin channels becoming degenerate. Thus, all the chiral Weyl nodes annihilate with their counterparts from another spin channel, in contrast to the typical annihilation of Weyl pairs from the same bands in inversion-asymmetric systems. Our experiments and theoretical calculations uncover a manner to modulate the diverse topological states by controlling the internal exchange splitting via external physical knobs in topological magnets.

preprint2020arXiv

33% Giant Anomalous Hall Current Driven by both Intrinsic and Extrinsic Contributions in Magnetic Weyl Semimetal Co3Sn2S2

Anomalous Hall effect (AHE) can be induced by intrinsic mechanism due to the band Berry phase and extrinsic one arising from the impurity scattering. The recently discovered magnetic Weyl semimetal Co3Sn2S2 exhibits a large intrinsic anomalous Hall conductivity (AHC) and a giant anomalous Hall angle (AHA). The predicted energy dependence of the AHC in this material exhibits a plateau at 1000 Ω-1 cm-1 and an energy width of 100 meV just below EF, thereby implying that the large intrinsic AHC will not significantly change against small-scale energy disturbances such as slight p-doping. Here, we successfully trigger the extrinsic contribution from alien-atom scattering in addition to the intrinsic one of the pristine material by introducing a small amount of Fe dopant to substitute Co in Co3Sn2S2. Our experimental results show that the AHC and AHA can be prominently enhanced up to 1850 Ω-1 cm-1 and 33%, respectively, owing to the synergistic contributions from the intrinsic and extrinsic mechanisms as distinguished by the TYJ model. In particular, the tuned AHA holds a record value in low fields among known magnetic materials. This study opens up a pathway to engineer giant AHE in magnetic Weyl semimetals, thereby potentially advancing the topological spintronics/Weyltronics.

preprint2020arXiv

Disorder-Induced Elevation of Intrinsic Anomalous Hall Conductance in an Electron-Doped Magnetic Weyl Semimetal

Topological materials are expected to show distinct transport signatures due to their unique band-inversion character and band-crossing points. However, the intentional modulation of such topological responses by experimentally feasible means is less explored. Here, an unusual elevation of anomalous Hall effect (AHE) is obtained in electron(Ni)-doped magnetic Weyl semimetal Co3-xNixSn2S2, showing peak values of anomalous Hall-conductivity, Hall-angle and Hall-factor at a relatively low doping level of x = 0.11. The separation of intrinsic and extrinsic contributions to total AHE using TYJ scaling model indicates that such significant enhancement is dominated by the intrinsic mechanism of electronic Berry curvature. Theoretical calculations reveal that compared with the Fermi-level shifting from electron filling, a usually overlooked effect of doping, i.e., local disorder, imposes a striking effect on broadening the bands and narrowing the inverted gap, and thus results in an elevation of the integrated Berry curvature. Our results not only realize the enhancement of AHE in a magnetic Weyl semimetal, but also provide a practical design principle to modulate the bands and transport properties in topological materials, by exploiting the disorder effect of doping.

preprint2020arXiv

Spontaneous Surface Collapse and Reconstruction in Antiferromagnetic Topological Insulator MnBi$_2$Te$_4$

MnBi$_2$Te$_4$ is an antiferromagnetic topological insulator which stimulates intense interests due to the exotic quantum phenomena and promising device applications. Surface structure is a determinant factor to understand the novel magnetic and topological behavior of MnBi2Te4, yet its precise atomic structure remains elusive. Here, we discovered a spontaneous surface collapse and reconstruction in few-layer MnBi2Te4 exfoliated under delicate protection. Instead of the ideal septuple-layer structure in the bulk, the collapsed surface is shown to reconstruct as Mn-doped Bi$_2$Te$_3$ quintuple-layer and Mn$_x$Bi$_y$Te double-layer with a clear van der Waals gap in between. Combining with first-principles calculations, such spontaneous surface collapse is attributed to the abundant intrinsic Mn-Bi antisite defects and tellurium vacancy in the exfoliated surface, which is further supported by in-situ annealing and electron irradiation experiments. Our results shed light on the understanding of the intricate surface-bulk correspondence of MnBi$_2$Te$_4$, and provide insightful perspective of the surface-related quantum measurements in MnBi$_2$Te$_4$ few-layer devices.