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Qinwei Shi

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Published work

4 published item(s)

preprint2022arXiv

On the sample-dependent minimal conductivity in weakly disordered graphene

We present a unified understanding of the experimentally observed minimal dc conductivity in weakly disordered graphene. Firstly, based on linear response theory, we reveal that randomness or disorder inevitably induces momentum dependent corrections to the electron self-energy function, which naturally yields a sample-dependent minimal conductivity. Taking the long-ranged Gaussian and Coulomb potentials as examples, we derive the momentum dependent self-energy function within the Born approximation, and further validate it via numerical simulations using the large-scale Lanczos algorithm. The explicit momentum dependences of the self-energy on the intensity, concentration and range of potential are critically addressed. Therefore, our results provide a reasonable interpretation of the sample-dependent minimal conductivity observed in graphene samples.

preprint2020arXiv

Spin-orbit related power-law dependence of the diffusive conductivity on the carrier density in disordered Rashba two-dimensional electron systems

By using the momentum-space Lanczos recursive method which considers rigorously all multiple-scattering events, we unveil that the non-perturbative disorder effect has dramatic impact on the charge transport of a two-dimensional electron system with Rashba spin-orbit coupling in the low-density region. Our simulations find a power-law dependence of the dc longitudinal conductivity on the carrier density, with the exponent linearly dependent on the Rashba spin-orbit strength but independent of the disorder strength. Therefore, the classical charge transport influenced by complicated multiple-scattering processes also shows the characteristic feature of the spin-orbit coupling. This highly unconventional behavior is argued to be observable in systems with tunable carrier density and Rashba splitting, such as the LaAlO$_{3}$/SrTiO$_{3}$ interface, the heterostructure of Rashba semiconductors bismuth tellurohalides and the surface alloy Bi$_x$Pb$_y$Sb$_{1-x-y}$/Ag(111).

preprint2010arXiv

Absence of a supercritical regime induced by short-range impurity scattering in gapped graphene

We show that the changes in the electronic density of states (DOS) in graphene induced by impurity scattering with short-range potentials are completely different from those caused by the long-range Coulomb potential. The spectral weight of the state that eventually disappears into the valence band (as the strength of scattering increases) does not transform into a resonance state. Therefore no unusual screening effects related to a redistribution of the density of states in the valence band are observed. The states induced by the short-range impurities in graphene, therefore, have distinctively different properties compared with the long-range potential case. These properties, in fact, closely resemble the case of a short-range single impurity in other bipartite lattices, such as the square, body centered cubic, and simple cubic lattices.

preprint2006arXiv

Analytical Study of Electronic Structure in Armchair Graphene Nanoribbons

We present the analytical solution of the wavefunction and energy dispersion of armchair graphene nanoribbons (GNRs) based on the tight-binding approximation. By imposing hard-wall boundary condition, we find that the wavevector in the confined direction is discretized. This discrete wavevector serves as the index of different subbands. Our analytical solutions of wavefunction and associated energy dispersion reproduce the numerical tight-binding results and the solutions based on the k*p approximation. In addition, we also find that all armchair GNRs with edge deformation have energy gaps, which agrees with recently reported first-principles calculations.