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Qing Hou

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cond-mat.mtrl-sci physics.comp-ph cond-mat.soft nlin.PS patt-sol

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preprint2016arXiv

Estimation of the lifetime of small helium bubbles near tungsten surfaces -- a methodological study

Under low energy and high flux/fluence irradiation of helium (He) atoms, the formation and bursting of He bubbles on tungsten (W) surfaces play important roles in the morphological evolution of component surfaces and impurity production in fusion reactors. Microscopically, the bursting of He bubbles is a stochastic process, and He bubbles have statistically average lifetimes. In the present paper, a molecular dynamics-based method was developed to extract, for the first time, the lifetime of He bubbles near tungsten surfaces. It was found that He bubble bursting can be treated as an activated event. Its occurrence frequency or, equivalently, the average lifetime of bubbles follows the Arrhenius equation. For a given bubble size, the activation energy exhibits a good linear dependence with the depth, and the pre-exponential factor obeys the Meyer-Nedle rule. These results are useful for establishing a model in multi-scale simulations of impurity production in the fusion plasma and of the morphological evolution of component surfaces.

preprint2015arXiv

Effects of temperature and surface orientation on migration behaviours of helium atoms near tungsten surfaces

Molecular dynamics simulations were performed to study the dependence of migration behaviours of single helium atoms near tungsten surfaces on the surface orientation and temperature. For W{100} and W{110} surfaces, He atoms can quickly escape out near the surface without accumulation even at a temperature of 400 K. The behaviours of helium atoms can be well-described by the theory of continuous diffusion of particles in a semi-infinite medium. For a W{111} surface, the situation is complex. Different types of trap mutations occur within the neighbouring region of the W{111} surface. The trap mutations hinder the escape of He atoms, resulting in their accumulation. The probability of a He atom escaping into vacuum from a trap mutation depends on the type of the trap mutation, and the occurrence probabilities of the different types of trap mutations are dependent on the temperature. This finding suggests that the escape rate of He atoms on the W{111} surface does not show a monotonic dependence on temperature. For instance, the escape rate at T=1500 K is lower than the rate at T=1100 K. Our results are useful for understanding the structural evolution and He release on tungsten surfaces and for designing models in other simulation methods beyond molecular dynamics.

preprint2015arXiv

On the fraction-dimension migration of self-interstitials in zirconium

MD simulations were conducted to study the self-interstitial migration in zirconium. By defining the crystal lattice point, at which more than one atom fall in the Wigner-Seitz cell of the lattice point, for the location of interstitial atoms (LSIA), three types of events were identified for LSIA migration: the jump remaining in one <112_0> direction (ILJ), the jump from one <112_0> to another <112_0> direction in the same basal plane (OLJ) and the jump from one basal plane to an adjacent basal plane (OPJ). The occurrence frequencies of the three types were calculated. ILJ was found to be the dominant event in the temperature range (300K to 1200K), but the occurrence frequencies of OLJ and OPJ increased with increasing temperature. Although the three types of jumps may not follow Brownian and Arrhenius behavior, on the whole, the migration of the LSIAs tend to be Brownian-like. Moreover, the migration trajectories of LSAs in the hcp basal-plane are not what are observed if only conventional one- or two-dimensional migrations exist; rather, they exhibit the feature we call fraction-dimensional. Namely, the trajectories are composed of line segments in <112_0> directions with the average length of the line segments varying with the temperature. Using MC simulations, the potential kinetic impacts of the fraction-dimensional migration, measured by the average number of lattice sites visited per jump event n_SPE was analyzed. The significant differences between the n_SPE value of the fraction-dimensional migration and those of the conventional one- and two-dimensional migrations suggest that the conventional diffusion coefficient, which cannot reflect the feature of fraction-dimensional migration, cannot give an accurate description of the underlying kinetics of SIAs in Zr.

preprint2013arXiv

Molecular dynamics simulations of cumulative helium bombardments on tungsten surfaces

Molecular dynamics (MD) simulations were performed to study the cumulative bombardments of low-energy (60-200 eV) helium (He) atoms on tungsten (W) surfaces. The behaviour of He and the response of the W surface were investigated. The He incident energy and tungsten temperature play important roles on the formation and growth of He clusters. The temperature can promote the coalescence of He clusters and increase the size of the He clusters. A stratification phenomenon of the He depth distribution has been observed. The rupture of the He clusters and, at the same time, the escape and re-deposition of the W atoms have been observed. During the formation of He clusters, the interstitial W atoms are produced and evolve into bundles of <111> crowdions, which would be constrained around the He clusters for a long time. However, they will finally move onto the top surface along the <111> direction, which results in stacking the W atoms on the surface. The complex combination effects of the He clusters and the interstitial atoms result in the growth of the surfaces.

preprint2012arXiv

Molecular dynamics simulations with many-body potentials on multiple GPUs - the implementation, package and performance

Molecular dynamics (MD) is an important research tool extensively applied in materials science. Running MD on a graphics processing unit (GPU) is an attractive new approach for accelerating MD simulations. Currently, GPU implementations of MD usually run in a one-host-process-one-GPU (OHPOG) scheme. This scheme may pose a limitation on the system size that an implementation can handle due to the small device memory relative to the host memory. In this paper, we present a one-host-process-multiple-GPU (OHPMG) implementation of MD with embedded-atom-model or semi-empirical tight-binding many-body potentials. Because more device memory is available in an OHPMG process, the system size that can be handled is increased to a few million or more atoms. In comparison with the CPU implementation, in which Newton's third law is applied to improve the computational efficiency, our OHPMG implementation has achieved a 28.9x~86.0x speedup in double precision, depending on the system size, the cut-off ranges and the number of GPUs. The implementation can also handle a group of small boxes in one run by combining the small boxes into a large box. This approach greatly improves the GPU computing efficiency when a large number of MD simulations for small boxes are needed for statistical purposes.

preprint1998arXiv

Dynamical Scaling Behavior of the Swift-Hohenberg Equation Following a Quench to the Modulated State

We study the kinetics of phase transitions in a Rayleigh-Benard system after onset of convection using 2D Swift-Hohenberg equation. An initially uniform state evolves to one whose ground state is spatially periodic. We confirmed previous results which showed that dynamical scaling occurs at medium quench ($ε= 0.25$) with scaling exponents 1/5 and 1/4 under zero noise and finite noise respectively. We find logarithmic scaling behavior for a deep quench ($ε= 0.75$) at zero noise. A simple method is devised to measure the proxy of domain wall length. We find that the energy and domain wall length exhibit scaling behavior with the same exponent. For $ε= 0.25$, the scaling exponents are 1/4 and 0.3 at zero and finite noise respectively.