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Qilin Wei

Qilin Wei contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2020arXiv

Enhanced Valley Zeeman Splitting in Fe-Doped Monolayer MoS2

The Zeeman effect offers unique opportunities for magnetic manipulation of the spin degree of freedom (DOF). Recently, valley Zeeman splitting, referring to the lifting of valley degeneracy, has been demonstrated in two-dimensional transition metal dichalcogenides (TMDs) at liquid helium temperature. However, to realize the practical applications of valley pseudospins, the valley DOF must be controllable by a magnetic field at room temperature, which remains a significant challenge. Magnetic doping in TMDs can enhance the Zeeman splitting, however, to achieve this experimentally is not easy. Here, we report unambiguous magnetic manipulation of valley Zeeman splitting at 300 K (g = -6.4) and 10 K (g = -11) in a CVD-grown Fe-doped MoS2 monolayer; the effective g factor can be tuned to -20.7 by increasing the Fe dopant concentration, which represents an approximately fivefold enhancement as compared to undoped MoS2. Our measurements and calculations reveal that the enhanced splitting and geff factors are due to the Heisenberg exchange interaction of the localized magnetic moments (Fe 3d electrons) with MoS2 through the d-orbital hybridization.

preprint2020arXiv

Spin-Valley Locking Effect in Defect States of Monolayer MoS$_2$

Valley pseudospin in two-dimensional (2D) transition-metal dichalcogenides (TMDs) allows optical control of spin-valley polarization and intervalley quantum coherence. Defect states in TMDs give rise to new exciton features and theoretically exhibit spin-valley polarization; however, experimental achievement of this phenomenon remains challenges. Here, we report unambiguous valley pseudospin of defect-bound localized excitons in CVD-grown monolayer MoS2; enhanced valley Zeeman splitting with an effective g-factor of -6.2 is observed. Our results reveal that all five d-orbitals and the increased effective electron mass contribute to the band shift of defect states, demonstrating a new physics of the magnetic responses of defect-bound localized excitons, strikingly different from that of A excitons. Our work paves the way for the manipulation of the spin-valley degrees of freedom through defects toward valleytronic devices.