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Priti Gupta

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cond-mat.mtrl-sci gr-qc

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preprint2020arXiv

Gravitational Waves from Hierarchical Triple Systems with Kozai-Lidov Oscillation

We study gravitational waves from a hierarchical three-body system up to first-order postNewtonian approximation. Under certain conditions, the existence of a nearby third body can cause periodic exchange between eccentricity of an inner binary and relative inclination, known as Kozai-Lidov oscillations. We analyze features of the waveform from the inner binary system undergoing such oscillations. We find that variation caused due to the tertiary companion can be observed in the gravitational waveforms and energy spectra, which should be compared with those from isolated binaries and coplanar three-body system. The detections from future space interferometers will make possible the investigation of the gravitational wave spectrum in mHz range and may fetch signals by sources addressed.

preprint2015arXiv

Layered transition metal dichalcogenides: promising near-lattice-matched substrates for GaN growth

Most III-nitride semiconductors are grown on non-lattice-matched substrates like sapphire or silicon due to the extreme difficulty of obtaining a native GaN substrate. We show that several layered transition-metal dichalcogenides are closely lattice matched to GaN and report the growth of GaN on a range of such layered materials. We report detailed studies of the growth of GaN on mechanically-exfoliated flakes WS$_2$ and MoS$_2$ by metalorganic vapour phase epitaxy. Structural and optical characterization show that strain-free, single-crystal islands of GaN are obtained on the underlying chalcogenide flakes. We obtain strong near-band-edge emission from these layers, and analyse their temperature-dependent photoluminescence properties. We also report a proof-of-concept demonstration of large-area epitaxial growth of GaN on CVD MoS$_2$. Our results show that the transition-metal dichalcogenides can serve as novel near-lattice-matched substrates for nitride growth.

preprint2013arXiv

A facile process for soak-and-peel delamination of CVD graphene from substrates using water

We demonstrate a simple technique to transfer CVD-grown graphene from copper and platinum substrates using a soak-and-peel delamination technique utilizing only hot deionized water. The lack of chemical etchants results in cleaner CVD graphene films minimizing unintentional doping, as confirmed by Raman and electrical measurements. The process allows the reuse of substrates and hence can enable the use of oriented substrates for growth of higher quality graphene, and is an inherently inexpensive and scalable process for large-area production.