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Pratibha Dev

Pratibha Dev appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallquant-phphysics.comp-ph

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Published work

12 published item(s)

preprint2022arXiv

Non-linear hybrid surface-defect states in defective Bi$_2$Se$_3$

Surface-states of topological insulators are assumed to be robust against non-magnetic defects in the crystal. However, recent theoretical models and experiments indicate that even non-magnetic defects can perturb these states. Our first-principles calculations demonstrate that the presence of Se vacancies in Bi$_2$Se$_3$, has a greater impact than a mere n-doping of the structure, which would just shift the Fermi level relative to the Dirac point. We observe the emergence of a non-linear band pinned near the Fermi level, while the Dirac cone shifts deeper into the valence band. We attribute these features in the bandstructure to the interaction between the surface and defect states, with the resulting hybridization between these states itself depending on the position and symmetry of the Se vacancy relative to the surfaces. Our results bring us a step closer to understanding the exotic physics emerging from defects in Bi$_2$Se$_3$ that remained unexplored in prior studies.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Doping-limitations of cubic boron nitride: effects of unintentional defects on shallow doping

Cubic boron nitride (cBN) is an ultra-wide bandgap, super-hard material with potential for extreme-temperature and -pressure applications. A proof-of-principle p-n junction using cBN was demonstrated almost three decades ago. However, to date, there remain two unresolved challenges that prevent its practical use in technologies: (i) it is difficult to produce high-quality cBN films and (ii) it is difficult to controllably n- and p-dope its matrix. In this theoretical work, we study the reasons for doping-limitations, which is an acute issue in realizing cBN-based electronics. In particular, we find that different unintentionally-present intrinsic and extrinsic defects act as compensating defects and/or introduce trap states. In turn, the presence of these defects and their complexes affect the incorporation, as well as the electronic structure properties, of shallow dopants [silicon and beryllium], which are introduced intentionally to n- and p-dope cBN. Our analysis of doping-limitations provides a path towards finding solutions for controllably n- and p-doping cBN.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Site-dependent properties of quantum emitters in nanostructured silicon carbide

Deep defects in silicon carbide (SiC) possess atom-like electronic, spin and optical properties, making them ideal for quantum-computing and -sensing applications. In these applications, deep defects are often placed within fabricated nanostructures that modify defect properties due to surface and quantum confinement effects. Thus far, theoretical studies exploring deep defects in SiC have ignored these effects. Using density functional theory, this work demonstrates site-dependence of properties of bright, negatively-charged silicon monovacancies within a SiC nanowire. It is shown that the optical properties of defects depend strongly on the hybridization of the defect states with the surface states and on the structural changes allowed by proximity to the surfaces. Additionally, the analysis of the first principles results indicates that the charge-state conversion and/or migration to thermodynamically-favorable undercoordinated surface sites can deteriorate deep-defect properties. These results illustrate the importance of considering how finite-size effects tune defect properties, and of creating mitigating protocols to ensure a defect's charge-state stability within nanostructured hosts.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

A multiconfigurational study of the negatively charged nitrogen-vacancy center in diamond

Deep defects in wide band gap semiconductors have emerged as leading qubit candidates for realizing quantum sensing and information applications. Due to the spatial localization of the defect states, these deep defects can be considered as artificial atoms/molecules in a solid state matrix. Here we show that unlike single-particle treatments, the multiconfigurational quantum chemistry methods, traditionally reserved for atoms/molecules, accurately describe the many-body characteristics of the electronic states of these defect centers and correctly predict properties that single-particle treatments fail to obtain. We choose the negatively charged nitrogen-vacancy (NV$^-$) center in diamond as the prototype defect to study with these techniques due to its importance for quantum information applications and because its properties are well-known, which makes it an ideal benchmark system. By properly accounting for electron correlations and including spin-orbit coupling and dipolar spin-spin coupling in the quantum chemistry calculations, for the NV$^-$ center in diamond clusters, we are able to: (i) show the correct splitting of the ground (first-excited) triplet state into two levels (four levels), (ii) calculate zero-field splitting values of the ground and excited triplet states, in good agreement with experiment, and (iii) calculate the energy differences between ground and exited spin-triplet and spin-singlet states, as well as their ordering, which are also found to be in good agreement with recent experimental data. The numerical procedure we have developed is general and it can screen other color centers whose properties are not well known but promising for applications.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

A new class of intrinsic magnet: two-dimensional yttrium sulphur selenide

Exploring and controlling magnetism in two-dimensional (2D) layered magnetic crystals, as well as their inclusion in heterogeneous assemblies, provide an unprecedented opportunity for fundamental science and technology. To date, however, there are only a few known intrinsic 2D magnets. Here we predict a novel 2D intrinsic magnet, yttrium sulfur selenide (YSSe), using first-principles calculations. The magnetism of this transition metal dichalcogenide originates from the partially-filled $3p$- and $4p$-orbitals of the chalcogens, unlike other known intrinsic magnets where magnetism arises from the partially-filled $3d$- and $4f$-orbitals. The unconventional magnetism in YSSe is a result of a unique combination of its structural and electronic properties. We further show that a lack of mirror symmetry results in piezoelectric properties, while the broken space- and time-symmetry ensures valley polarization. YSSe is a rare magnetic-piezoelectric material that can enable novel spintronics, valleytronics, and quantum technologies.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Fingerprinting quantum emitters in hexagonal boron nitride using strain

Two dimensional van der Waals crystals and their heterostructures provide an exciting alternative to bulk wide bandgap semiconductors as hosts of single photon emitters. Amongst different layered materials, bright and robust defect-based single photon emitters have been observed within hexagonal boron nitride, a layered wide-bandgap semiconductor. Despite research efforts to date, the identities of the deep defects responsible for quantum emissions in hexagonal boron nitride remain unknown. In this theoretical work, I demonstrate that the strain-induced changes in emission frequencies depend on: (i) the detailed nature of the defect states involved in the optical excitations, and (ii) the rich boron chemistry that results in complex interactions between boron atoms. As each defect shows a distinct response to the strain, it can be used not only to tune emission frequencies, but also to identify the quantum emitters in hexagonal boron nitride.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Quantum materials interfaces: graphene/Bismuth (111) heterostructures

Heterostructures involving graphene and bismuth, with their ability to absorb light over a very wide energy range, are of interest for engineering next-generation opto-electronics. Critical to the technological application of such heterostructures is an understanding of the underlying physics governing their properties. Here, using first-principles calculations, we study the interfacial interactions between graphene and bismuth thin-films. Our study reveals non-intuitive phenomena associated with the moiré-physics of these superlattices. We show a preservation of graphene-derived Dirac cones in spite of proximity to a substrate with large spin-orbit coupling, a greater influence of graphene on the electronic structure properties of bismuth, and the surprising presence of a magnetic solution, only slightly higher in energy (by several meV) than the non-magnetic structure, possibly validating experiments. Such subtle and unanticipated phenomena associated with the moiré-physics are expected to play key roles in the practical applications of heterogeneous assemblies of two-dimensional quantum systems.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Thickness-dependence of hydrogen-induced phase transition in MoTe$_{2}$

Two-dimensional transition metal dichalcogenides (TMDs) usually exist in two or more structural phases with different physical properties, and can be repeatedly switched between these phases via different stimuli, making them potentially useful for memory devices. An understanding of the physics of interfaces between the TMDs and conventional semiconductors, or other 2D-crystals forming heterogenous or homogeneous assemblies is central to their successful application in technologies. However, to date, most theoretical works have explored phase-change properties of isolated TMD monolayers in vacuum. Using \textit{ab-initio} calculations, we show how interfacial effects modify the thermodynamics and kinetics of the phase transition by studying hydrogen-induced transitions in monolayers and bilayers of MoTe$_{2}$. The phase-change properties of MoTe$_{2}$ show substantial thickness-dependence, with the timescale for a transition in the hydrogenated bilayer being about $10^7$-times longer than that in a monolayer at room temperature. Our study highlights the importance of taking effects of immediate environment into account when predicting properties of 2D crystals.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Silicon vacancy center in 4H-SiC: Electronic structure and spin-photon interfaces

Defects in silicon carbide are of intense and increasing interest for quantum-based applications due to this material's properties and technological maturity. We calculate the multi-particle symmetry adapted wave functions of the negatively charged silicon vacancy defect in hexagonal silicon carbide via use of group theory and density functional theory and find the effects of spin-orbit and spin-spin interactions on these states. Although we focused on $\textrm{V}_{\textrm{Si}}^-$ in 4H-SiC, because of its unique fine structure due to odd number of active electrons, our methods can be easily applied to other defect centers of different polytpes, especially to the 6H-SiC. Based on these results we identify the mechanism that polarizes the spin under optical drive, obtain the ordering of its dark doublet states, point out a path for electric field or strain sensing, and find the theoretical value of its ground-state zero field splitting to be 68 MHz, in good agreement with experiment. Moreover, we present two distinct protocols of a spin-photon interface based on this defect. Our results pave the way toward novel quantum information and quantum metrology applications with silicon carbide.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Spin-photon entanglement interfaces in silicon carbide defect centers

Optically active spins in solid-state systems can be engineered to emit photons that are entangled with the spin in the solid. This allows for applications such as quantum communications, quantum key distribution, and distributed quantum computing. Recently, there has been a strong interest in silicon carbide defects, as they emit very close to the telecommunication wavelength, making them excellent candidates for long range quantum communications. In this work we develop explicit schemes for spin-photon entanglement in several SiC defects: the silicon monovacancy, the silicon divacancy, and the NV center in SiC. Distinct approaches are given for (i) single-photon and spin entanglement and (ii) the generation of long strings of entangled photons. The latter are known as cluster states and comprise a resource for measurement-based quantum information processing.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Spin Coherence and Echo Modulation of the Silicon Vacancy in 4H-SiC at Room Temperature

The silicon vacancy in silicon carbide is a strong emergent candidate for applications in quantum information processing and sensing. We perform room temperature optically-detected magnetic resonance and spin echo measurements on an ensemble of vacancies and find the properties depend strongly on magnetic field. The spin echo decay time varies from less than 10 $μ$s at low fields to 80 $μ$s at 68 mT, and a strong field-dependent spin echo modulation is also observed. The modulation is attributed to the interaction with nuclear spins and is well-described by a theoretical model.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Prediction Of A Multi-Center Bonded Solid Boron Hydride for Hydrogen Storage

An ideal material for on-board hydrogen storage must release hydrogen at practical temperature and pressure and also regenerate efficiently under similarly gentle conditions. Therefore, thermodynamically, the hydride material must lie within a narrow range near the hydrogenation/dehydrogenation phase boundary. Materials involving only conventional bonding mechanisms are unlikely to meet these requirements. In contrast, materials containing certain frustrated bonding are designed to be on the verge of frustration-induced phase transition, and they may be better suited for hydrogen storage. Here we propose a novel layered solid boron hydride and show its potential for hydrogen storage. The absence of soft phonon modes confirms the dynamical stability of the structure. Charging the structure significantly softens hydrogen-related phonon modes. Boron-related phonons, in contrast, are either hardened or not significantly affected by electron doping. These results suggest that electrochemical charging may facilitate hydrogen release while the underlying boron network remains intact for subsequent rehydrogenation.

0 citations0 reviewsNo code linkedOpen access