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Prashun Gorai

Explore this author’s publications, collaborators and research topics. This catalog record has not been claimed by its author.

ResearcherUnclaimed source record
cond-mat.mtrl-sci

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4 publications

preprint2022arXiv

Ionic Bonds Control Ferroelectric Behavior in Wurtzite Nitrides

Ferroelectricity enables key integrated technologies from non-volatile memory to precision ultrasound. Wurtzite ferroelectric Al1-xScxN has recently attracted attention because of its robust ferroelectricity and Si process compatibility in addition to being the first known ferroelectric wurtzite. However, the origin and control of ferroelectricity in wurtzite materials is not yet fully understood. Here we show that the local bond ionicity, rather than simply the change in tetrahedral distortion, is key to controlling the macroscopic ferroelectric response, according to our coupled experimental and computational results. Across the composition gradient in Sc < 0.35 range and 140-260 nm thickness in combinatorial thin films of Al1-xScxN, the pure wurtzite phase exhibits a similar c/a ratio regardless of the Sc content, due to elastic interaction with neighboring crystals. The coercive field and spontaneous polarization significantly decrease with increasing Sc content despite this invariant c/a ratio, due to the more ionic bonding nature of Sc-N relative to the more covalent Al-N bonds, supported by DFT calculations. Based on these insights, ionicity engineering is introduced as an approach to reduce coercive field of Al1-xScxN for memory and other applications and to control ferroelectric properties in other wurtzites.

Open access
preprint2022arXiv

Ternary Wide Band Gap Oxides for High-Power Electronics Identified Computationally

As electricity grids become more renewable energy-compliant, there will be a need for novel semiconductors that can withstand high power, high voltage, and high temperatures. Wide band gap (WBG) semiconductors tend to exhibit large breakdown field, allowing high operating voltages. Currently explored WBG materials for power electronics are costly (GaN), difficult to synthesize as high-quality single crystals (SiC) and at scale (diamond, BN), have low thermal conductivity (ββ-Ga2_2O3_3), or cannot be suitably doped (AlN). We conduct a computational search for novel semiconductors across 1,340 known metal-oxides using first-principles calculations and existing transport models. We calculate the Baliga figure of merit (BFOM) and lattice thermal conductivity (κLκ_L) to identify top candidates for n-type power electronics. We find 40 mostly ternary oxides that have higher κLκ_L than ββ-Ga2_2O3_3 and higher n-type BFOM than SiC and GaN. Among these, several material classes emerge, including 2-2-7 stoichiometry thortveitites and pyrochlores, II-IV spinels, and calcite-type borates. Within these classes, we propose In2_2Ge2_2O7_7, Mg2_2GeO4_4, and InBO3_3 as they are the most favorable for n-type doping based on our preliminary evaluation and could be grown as single crystals or thin film heterostructures. These materials could help advance power electronic devices for the future grid.

Open access
preprint2020arXiv

Charting Lattice Thermal Conductivity of Inorganic Crystals

Thermal conductivity is a fundamental material property but challenging to predict, with less than 5% out of about 10510^5 synthesized inorganic materials being documented. In this work, we extract the structural chemistry that governs lattice thermal conductivity, by combining graph neural networks and random forest approaches. We show that both mean and variation of unit-cell configurational properties, such as atomic volume and bond length, are the most important features, followed by mass and elemental electronegativity. We chart the structural chemistry of lattice thermal conductivity into extended van-Arkel triangles, and predict the thermal conductivity of all known inorganic materials in the Inorganic Crystal Structure Database. For the latter, we develop a transfer learning framework extendable for other applications.

Open access
preprint2015arXiv

Solar energy conversion properties and defect physics of ZnSiP2_2

Implementation of an optically active material on silicon has been a persistent technological challenge. For tandem photovoltaics using a Si bottom cell, as well as for other optoelectronic applications, there has been a longstanding need for optically active, wide band gap materials that can be integrated with Si. ZnSiP2_2 is a stable, wide band gap (2.1 eV) material that is lattice matched with silicon and comprised of inexpensive elements. As we show in this paper, it is also a defect-tolerant material. Here, we report the first ZnSiP2_2 photovoltaic device. We show that ZnSiP2_2 has excellent photoresponse and high open circuit voltage of 1.3 V, as measured in a photoelectrochemical configuration. The high voltage and low band gap-voltage offset are on par with much more mature wide band gap III-V materials. Photoluminescence data combined with theoretical defect calculations illuminate the defect physics underlying this high voltage, showing that the intrinsic defects in ZnSiP2_2 are shallow and the minority carrier lifetime is 7 ns. These favorable results encourage the development of ZnSiP2_2 and related materials as photovoltaic absorber materials.

Open access

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