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Prabir Pal

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cond-mat.mtrl-sci cond-mat.mes-hall cond-mat.other physics.app-ph physics.chem-ph

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preprint2021arXiv

Nonmonotonic magnetic field dependence of remanent ferroelectric polarization in reduced-graphene-oxide-BiFeO$_3$ nanocomposite

In a nanocomposite of reduced graphene oxide (RGO) and BiFeO$_3$ (BFO), the remanent ferroelectric polarization is found to follow nonmonotonic magnetic field dependence at room temperature as the applied magnetic field is swept across 0-20 kOe on a pristine sample. The remanent ferroelectric polarization is determined both from direct electrical measurements on an assembly of nanoparticles and powder neutron diffraction patterns recorded under 0-20 kOe field. The nanosized ($\sim$20 nm) particles of BFO are anchored onto the graphene sheets of RGO via Fe-C bonds with concomitant rise in covalency in the Fe-O bonds. The field-dependent competition between the positive and negative magnetoelectric coupling arising from magnetostriction due to, respectively, interface and bulk magnetization appears to be giving rise to the observed nonmonotonic field dependence of polarization. The emergence of Fe-C bonds and consequent change in the magnetic and electronic structure of the interface region has influenced the coupling between ferroelectric and magnetic properties remarkably and thus creates a new way of tuning the magnetoelectric properties via reconstruction of interfaces in nanocomposites or heterostructures of graphene/single-phase-multiferroic systems.

preprint2020arXiv

Direct measurement of interfacial Dzyaloshinskii-Moriya interaction at the MoS$_{\rm 2}$/Ni$_{80}$Fe$_{20}$ interface

We report on a direct measurement of sizable interfacial Dzyaloshinskii-Moriya interaction (iDMI) at the interface of two-dimensional transition metal dichalcogenide (2D-TMD), MoS$_{\rm 2}$ and Ni$_{80}$Fe$_{20}$ (Py) using Brillouin light scattering spectroscopy. A clear asymmetry in spin-wave dispersion is measured in MoS$_{\rm 2}$/Py/Ta, while no such asymmetry is detected in the reference Py/Ta system. A linear scaling of the DMI constant with the inverse of Py thickness indicates the interfacial origin of the observed DMI. We further observe an enhancement of DMI constant in three to four layer MoS$_{\rm 2}$/Py system (by 56$\%$) as compared to 2 layer MoS$_{\rm 2}$/Py which is caused by a higher density of MoO$_{\rm 3}$ defect species in the case of three to four layer MoS$_{\rm 2}$. The results open possibilities of spin-orbitronic applications utilizing the 2D-TMD based heterostructures.

preprint2016arXiv

Novel optically active lead-free relaxor ferroelectric (Ba0.6Bi0.2Li0.2)TiO3

We discovered a near room temperature lead-free relaxor-ferroelectric (Ba0.6Bi0.2Li0.2)TiO3 (BBLT) having A-site compositional disordered ABO3 perovskite structure. Microstructure-property relations revealed that the chemical inhomogeneities and development of local polar nano regions (PNRs) are responsible for dielectric dispersion as a function of probe frequencies and temperatures. Rietveld analysis indicates mixed crystal structure with 80% tetragonal structure (space group P4mm) and 20% orthorhombic structure (space group Amm2) which is confirmed by the high resolution transmission electron diffraction pattern. Dielectric constant and tangent loss dispersion with and without illumination of light obey nonlinear Vogel-Fulture relation. It shows slim polarization-hysteresis (P-E) loops and excellent displacement coefficients (d33 ~ 233 pm/V) near room temperature, which gradually diminish near the maximum dielectric dispersion temperature (Tm). The underlying physics for light-sensitive dielectric dispersion was probed by X-ray photon spectroscopy (XPS) which strongly suggests that mixed valence of bismuth ions, especially Bi5+ ions, are responsible for most of the optically active centers. Ultraviolet photoemission measurements showed most of the Ti ions are in 4+ states and sit at the centers of the TiO6 octahedra, which along with asymmetric hybridization between O 2p and Bi 6s orbitals appears to be the main driving force for net polarization. This BBLT material may open a new path for environmental friendly lead-free relaxor-ferroelectric research.

preprint2016arXiv

Ultrasensitive Self-powered large area planar GaN UV-photodetector using reduced graphene oxide electrodes

A simplistic design of a self-powered UV-photodetector device based on hybrid r-GO/GaN is demonstrated. Under zero bias, the fabricated hybrid photodetector shows a photosensivity of ~ 85% while ohmic contact GaN photodetector with identical device structure exhibits only ~ 5.3% photosensivity at 350 nm illumination (18 microWatt/cm^2). The responsivity and detectivity of the hybrid device were found to be 1.54 mA/W and 1.45x10^10 Jones (cm Hz^(1/2) W^(-1)), respectively at zero bias under 350 nm illumination (18 microWatt/cm^2) with fast response (60 ms), recovery time (267 ms) and excellent repeatability. Power density-dependent responsivity & detectivity revealed ultrasensitive behaviour under low light conditions. The source of observed self-powered effect in hybrid photodetector is attributed to the depletion region formed at the r-GO and GaN quasi-ohmic interface.

preprint2014arXiv

Chemical potential shift and gap-state formation in SrTiO$_{3-δ}$ revealed by photoemission spectroscopy

In this study, we report on investigations of the electronic structure of SrTiO$_3$ annealed at temperature ranging between 550 and 840$^\circ$C in an ultrahigh vacuum. Annealing induced oxygen vacancies (O$_{vac}$) impart considerable changes in the electronic structure of SrTiO$_3$. Using core-level photoemission spectroscopy, we have studied the chemical potential shift ($Δμ$) as a function of annealing temperature. The result shows that the chemical potential monotonously increases with electron doping in SrTiO$_{3-δ}$. The monotonous increase of the chemical potential rules out the existence of electronic phase separation in the sample. Using valence band photoemission, we have demonstrated the formation of a low density of states at the near Fermi level electronic spectrum of SrTiO$_{3-δ}$. The gap-states were observed by spectral weight transfer over a large energy scale of the stoichiometric band gap of SrTiO$_3$ system leading finally to an insulator - metal transition. We have interpreted our results from the point of structural distortions induced by oxygen vacancies.

preprint2014arXiv

Photoconductivity and photo-detection response of multiferroic bismuth iron oxide

We report visible light detection with in-plane BiFeO3 (BFO) thin films grown on pre-patterned inter-digital electrodes. In-plane configured BFO film displayed photocurrents with a 40:1 photo-to-dark-current ratio and improved photo-sensing ability for >15000 s (4 hrs) under small bias voltage (42V). Nearly sixty percent of the photo-induced charge carriers decay in 1.0 s and follow a double-exponential decay model. At 373 K the effect of light does not significantly increase the dark current, probably due to reduced mobility. Sub-bandgap weak monochromatic light (1 mw/cm2) shows one fold increase in photo-charge carriers.

preprint2012arXiv

Photoinduced reduction of surface states in Fe:ZnO

Transition metal doping is known to increase the photosensitivity to visible light for photocatalytically active ZnO. We report on the electronic structure of nano-crystalline Fe:ZnO, which has recently been shown to be an efficient photocatalyst. The photo-activity of ZnO reduces Fe from 3+ to 2+ in the surface region of the nano-crystalline material. Electronic states corresponding to low-spin Fe 2+ are observed and attributed to crystal field modification at the surface. These states can be important for the photocatalytic sensitivity to visible light due to their deep location in the ZnO bandgap. X-ray absorption and x-ray photoemission spectroscopy suggest that Fe is only homogeneously distributed for concentrations up to 3%. Increased concentrations does not result in a higher concentration of Fe ions in the surface region. This is a crucial factor limiting the photocatalytic functionality of ZnO, where the most efficient doping concentration have been shown to be 2-4% for Fe doping. Using resonant photoemission spectroscopy we determine the location of Fe 3d states with sensitivity to the charge states of the Fe ion even for multi-valent and multi-coordinated Fe.

preprint2011arXiv

Atomic scale chemical fluctuation in LaSrVMoO6: A proposed halfmetallic antiferromagnet

Half metallic antiferromagnets (HMAFM) have been proposed theoretically long ago but have not been realized experimentally yet. Recently, a double perovskite compound, LaSrVMoO6, has been claimed to be an almost real HMAFM system. Here, we report detailed experimental and theoretical studies on this compound. Our results reveal that the compound is neither a half metal nor an ordered antiferromagnet. Most importantly, an unusual chemical fluctuation is observed locally, which finally accounts for all the electronic and magnetic properties of this compound.