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Researcher profile

Ponniah Vajeeston

Ponniah Vajeeston contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.supr-conphysics.app-ph

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Published work

3 published item(s)

preprint2022arXiv

Disorder-induced ordering in gallium oxide polymorphs

Polymorphs are common in nature and can be stabilized by applying external pressure in materials. The pressure/strain can also be induced by the gradually accumulated radiation disorder. However, in semiconductors, the radiation disorder accumulation typically results in the amorphization instead of engaging polymorphism. By studying these phenomena in gallium oxide we found that the amorphization may be prominently suppressed by the monoclinic to orthorhombic phase transition. Utilizing this discovery, a highly oriented single-phase orthorhombic film on the top of the monoclinic gallium oxide substrate was fabricated. Exploring this system, a novel mode of a lateral polymorphic regrowth, not previously observed in solids, was detected. In combination, these data envisage a new direction of research on polymorphs in Ga2O3 and, potentially, for similar polymorphic families in other materials.

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preprint2022arXiv

Superconducting and structural properties of non-centrosymmetric Re6Hf superconductor under high pressure

We report the effect of high pressure on the superconducting, vortex pinning, and structural properties of a polycrystalline non-centrosymmetric superconductor Re6Hf. The superconducting transition temperature, Tc, reveals a modest decrease as pressure P increases with a slope -0.046 K/GPa (-0.065 K/GPa) estimated from resistivity measurements up to 8 GPa (magnetization measurement ~ 1.1 GPa). Structural analysis up to ~18 GPa reveals monotonic decreases of lattice constant without undergoing any structural transition and a high value of bulk modulus B0= 333.63 GPa, indicating the stability of the structure. Furthermore, the upper critical field and lower critical field at absolute temperature (Hc2(0) & Hc1(0)) decreases slightly from the ambient pressure value as pressure increases up to 2.5 GPa. In addition, up to P ~ 2.5 GPa using thermally activated flux flow of vortices revealed a double linearity field dependence of activation energy of vortices, confirming the coexistence of single and collective pinning vortex states. Moreover, analysis of critical current density using the collective pinning theory showed the transformation of δTc to δl pinning as pressure increases, possibly due to migration of grain boundaries. Besides, the band structure calculations using density functional theory show that density of states decreases modestly with pressure, which may be a possible reason for such a small decrease in Tc by pressure.

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preprint2017arXiv

The intriguing mechanism of phosphorus anodes for sodium ion batteries revealed by operando pair distribution function and X-ray diffraction computed tomography

Phosphorus is one of the most promising anodes for sodium ion batteries (SIBs). Little is known about the structural mechanism of Na/P cycling due to the fact that only one of the structures involved (Na3P) is crystalline. Using operando X-ray diffraction computed tomography (XRD-CT) analysed by Rietveld and pair distribution (PDF) methods combined with density functional theory (DFT) calculations we show that the sodiation and desodiation mechanisms of phosphorus are very different. Sodiation follows the thermodynamic path of lowest energy from P via NaP to Na3P while desodiation follows a kinetically controlled deintercalation mechanism in which the layered Na3-xP type structure is maintained until P nanoclusters form. Using XRD-CT allows analysis of the 3D structure of the anode, but most importantly, removes the contributions from the sample container and other battery components, particularly important for PDF analysis.

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