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Piranavan Kumaravadivel

Piranavan Kumaravadivel appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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Published work

3 published item(s)

preprint2016arXiv

Signatures of evanescent transport in ballistic suspended graphene superconductor junctions

In Dirac materials, the low energy excitations behave like ultra-relativistic massless particles with linear energy dispersion. A particularly intriguing phenomenon arises with the intrinsic charge transport behavior at the Dirac point where the charge density approaches zero. In graphene, a 2-D Dirac fermion system, it was predicted that charge transport near the Dirac point is carried by evanescent modes, resulting in unconventional pseudo-diffusive charge transport even in the absence of disorder. In the past decade, experimental observation of this phenomenon remained challenging due to the presence of strong disorder in graphene devices which limits the accessibility of the low carrier density regime close enough to the Dirac point. Here we report transport measurements on ballistic suspended graphene-Niobium Josephson weak links that demonstrate a transition from ballistic to pseudo-diffusive like evanescent transport below a carrier density of $(10^{10} cm^{-2})$.Approaching the Dirac point, the sub-harmonic gap structures due to multiple Andreev reflections display a strong Fermi energy-dependence and become increasingly pronounced, while the normalized excess current through the superconductor-graphene interface decreases sharply. Our observations are in qualitative agreement with the longstanding theoretical prediction for the emergence of evanescent transport mediated pseudo-diffusive transport in graphene.

preprint2015arXiv

Tuning Strain in Flexible Graphene Nanoelectromechanical Resonators

The structural flexibility of low dimensional nanomaterials offers unique opportunities for studying the impact of strain on their physical properties and for developing innovative devices utilizing strain engineering. A key towards such goals is a device platform which allows the independent tuning and reliable calibration of the strain. Here we report the fabrication and characterization of graphene nanoelectromechanical resonators(GNEMRs) on flexible substrates. Combining substrate bending and electrostatic gating, we achieve the independent tuning of the strain and sagging in graphene and explore the nonlinear dynamics over a wide parameter space. Analytical and numerical studies of a continuum mechanics model, including the competing higher order nonlinear terms, reveal a comprehensive nonlinear dynamics phase diagram, which quantitatively explains the complex behaviors of GNEMRs.

preprint2011arXiv

Bolometric response in graphene based superconducting tunnel junctions

We fabricate graphene-TiOx-Al tunnel junctions and characterize their radio frequency response. Below the superconducting critical temperature of Al and when biased within the superconducting gap, the devices show enhanced dynamic resistance which increases with decreasing temperature. Application of radio frequency radiation affects the dynamic resistance through electronic heating. The relation between the electron temperature rise and the absorbed radiation power is measured, from which the bolometric parameters, including heat conductance, noise equivalent power and responsivity, are characterized.