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Pinshane Y. Huang

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cond-mat.mes-hall cond-mat.mtrl-sci

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preprint2020arXiv

Deep Learning Enabled Strain Mapping of Single-Atom Defects in 2D Transition Metal Dichalcogenides with Sub-picometer Precision

2D materials offer an ideal platform to study the strain fields induced by individual atomic defects, yet challenges associated with radiation damage have so-far limited electron microscopy methods to probe these atomic-scale strain fields. Here, we demonstrate an approach to probe single-atom defects with sub-picometer precision in a monolayer 2D transition metal dichalcogenide, WSe$_{2-2x}$Te$_{2x}$. We utilize deep learning to mine large datasets of aberration-corrected scanning transmission electron microscopy images to locate and classify point defects. By combining hundreds of images of nominally identical defects, we generate high signal-to-noise class-averages which allow us to measure 2D atomic coordinates with up to 0.3 pm precision. Our methods reveal that Se vacancies introduce complex, oscillating strain fields in the WSe$_{2-2x}$Te$_{2x}$ lattice which cannot be explained by continuum elastic theory. These results indicate the potential impact of computer vision for the development of high-precision electron microscopy methods for beam-sensitive materials.

preprint2014arXiv

Multi-terminal electrical transport measurements of molybdenum disulphide using van der Waals heterostructure device platform

Atomically thin two-dimensional (2D) semiconductors such as molybdenum disulphide (MoS2) hold great promise in electrical, optical, and mechanical devices and display novel physical phenomena such as coupled spin-valley physics and the valley Hall effect. However, the electron mobility of mono- and few-layer MoS2 has so far been substantially below theoretically predicted limits, particularly at low temperature (T), which has hampered efforts to observe its intrinsic quantum transport behaviors. Potential sources of disorder and scattering include both defects such as sulfur vacancies in the MoS2 itself, and extrinsic sources such as charged impurities and remote optical phonons from oxide dielectrics. To reduce extrinsic scattering and approach the intrinsic limit, we developed a van der Waals (vdW) heterostructure device platform where MoS2 layers are fully encapsulated within hexagonal boron nitride (hBN), and electrically contacted in a multi-terminal geometry using gate-tunable graphene electrodes. Multi-terminal magneto-transport measurements show dramatic improvements in performance, including a record-high Hall mobility reaching 34,000 cm2/Vs for 6-layer MoS2 at low T. Comparison to theory shows a decrease of 1-2 orders of magnitude in the density of charged impurities, indicating that performance at low T in previous studies was limited by extrinsic factors rather than defects in the MoS2. We also observed Shubnikov-de Haas (SdH) oscillations for the first time in high-mobility monolayer and few-layer MoS2. This novel device platform therefore opens up a new way toward measurements of intrinsic properties and the study of quantum transport phenomena in 2D semiconducting materials.

preprint2013arXiv

Grains and grain boundaries in highly crystalline monolayer molybdenum disulfide

Recent progress in large-area synthesis of monolayer molybdenum disulfide, a new two-dimensional direct-bandgap semiconductor, is paving the way for applications in atomically thin electronics. Little is known, however, about the microstructure of this material. Here we have refined chemical vapor deposition synthesis to grow highly crystalline islands of monolayer molybdenum disulfide up to 120 um in size with optical and electrical properties comparable or superior to exfoliated samples. Using transmission electron microscopy, we correlate lattice orientation, edge morphology, and crystallinity with island shape to demonstrate that triangular islands are single crystals. The crystals merge to form faceted tilt and mirror boundaries that are stitched together by lines of 8- and 4- membered rings. Density functional theory reveals localized mid-gap states arising from these 8-4 defects. We find that mirror boundaries cause strong photoluminescence quenching while tilt boundaries cause strong enhancement. In contrast, the boundaries only slightly increase the measured in-plane electrical conductivity.

preprint2013arXiv

Strain Solitons and Topological Defects in Bilayer Graphene

Spontaneous symmetry-breaking, where the ground state of a system has lower symmetry than the underlying Hamiltonian, is ubiquitous in physics. It leads to multiply-degenerate ground states, each with a different "broken" symmetry labeled by an order parameter. The variation of this order parameter in space leads to soliton-like features at the boundaries of different broken-symmetry regions and also to topological point defects. Bilayer graphene is a fascinating realization of this physics, with an order parameter given by its interlayer stacking coordinate. Bilayer graphene has been a subject of intense study because in the presence of a perpendicular electric field, a band gap appears in its electronic spectrum [1-3] through a mechanism that is intimately tied to its broken symmetry. Theorists have further proposed that novel electronic states exist at the boundaries between broken-symmetry stacking domains [4-5]. However, very little is known about the structural properties of these boundaries. Here we use electron microscopy to measure with nanoscale and atomic resolution the widths, motion, and topological structure of soliton boundaries and topological defects in bilayer graphene. We find that each soliton consists of an atomic-scale registry shift between the two graphene layers occurring over 6-11 nm. We infer the minimal energy barrier to interlayer translation and observe soliton motion during in-situ heating above 1000 °C. The abundance of these structures across a variety samples, as well as their unusual properties, suggests that they will have substantial effects on the electronic and mechanical properties of bilayer graphene.

preprint2012arXiv

Ultrathin Oxide Films by Atomic Layer Deposition on Graphene

In this paper, a method is presented to create and characterize mechanically robust, free standing, ultrathin, oxide films with controlled, nanometer-scale thickness using Atomic Layer Deposition (ALD) on graphene. Aluminum oxide films were deposited onto suspended graphene membranes using ALD. Subsequent etching of the graphene left pure aluminum oxide films only a few atoms in thickness. A pressurized blister test was used to determine that these ultrathin films have a Young's modulus of 154 \pm 13 GPa. This Young's modulus is comparable to much thicker alumina ALD films. This behavior indicates that these ultrathin two-dimensional films have excellent mechanical integrity. The films are also impermeable to standard gases suggesting they are pinhole-free. These continuous ultrathin films are expected to enable new applications in fields such as thin film coatings, membranes and flexible electronics.

preprint2010arXiv

Imaging Grains and Grain Boundaries in Single-Layer Graphene: An Atomic Patchwork Quilt

The properties of polycrystalline materials are often dominated by the size of their grains and by the atomic structure of their grain boundaries. These effects should be especially pronounced in 2D materials, where even a line defect can divide and disrupt a crystal. These issues take on practical significance in graphene, a hexagonal two-dimensional crystal of carbon atoms; Single-atom-thick graphene sheets can now be produced by chemical vapor deposition on up to meter scales, making their polycrystallinity almost unavoidable. Theoretically, graphene grain boundaries are predicted to have distinct electronic, magnetic, chemical, and mechanical properties which strongly depend on their atomic arrangement. Yet, because of the five-order-of-magnitude size difference between grains and the atoms at grain boundaries, few experiments have fully explored the graphene grain structure. Here, we use a combination of old and new transmission electron microscope techniques to bridge these length scales. Using atomic-resolution imaging, we determine the location and identity of every atom at a grain boundary and find that different grains stitch together predominantly via pentagon-heptagon pairs. We then use diffraction-filtered imaging to rapidly map the location, orientation, and shape of several hundred grains and boundaries, where only a handful have been previously reported. The resulting images reveal an unexpectedly small and intricate patchwork of grains connected by tilt boundaries. By correlating grain imaging with scanned probe measurements, we show that these grain boundaries dramatically weaken the mechanical strength of graphene membranes, but do not measurably alter their electrical properties. These techniques open a new window for studies on the structure, properties, and control of grains and grain boundaries in graphene and other 2D materials.