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Pino D'Amico

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7works
3topics
4close collaborators

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7 publications

preprint2022arXiv

Efficient GW calculations in two dimensional materials through a stochastic integration of the screened potential

Many-body perturbation theory methods, such as the G0W0G_0W_0 approximation, are able to accurately predict quasiparticle (QP) properties of several classes of materials. However, the calculation of the QP band structure of two-dimensional (2D) semiconductors is known to require a very dense BZ sampling, due to the sharp qq-dependence of the dielectric matrix in the long-wavelength limit (q→0\mathbf{q} \to 0). In this work, we show how the convergence of the QP corrections of 2D semiconductors with respect to the BZ sampling can be drastically improved, by combining a Monte Carlo integration with an interpolation scheme able to represent the screened potential between the calculated grid points. The method has been validated by computing the band gap of three different prototype monolayer materials: a transition metal dichalcogenide (MoS2_2), a wide band gap insulator (hBN) and an anisotropic semiconductor (phosphorene). The proposed scheme shows that the convergence of the gap for these three materials up to 50meV is achieved by using $\k$-point grids comparable to those needed by DFT calculations, while keeping the grid uniform.

preprint2019arXiv

Intrinsic edge excitons in two-dimensional MoS2_2

Using accurate first-principles calculations based on many-body perturbation theory we predict that two-dimensional MoS2_2 hosts edge excitons with universal character, intrinsic to the existence of edges and lying well below the onset of bulk features. These excitons are largely insensitive to edge terminations or orientation, persisting even in the presence of metallic screening at zigzag edges, with large binding energies of ∼\sim0.4 eV. Additional excitons can also emerge in ultranarrow ribbons, or as a function of the chemical nature of the termination. The chemical, structural, and electronic similarities with Se- or W-based transition-metal dichalcogenides suggest that these optical features could be common in this class of materials.

preprint2016arXiv

Accurate ab initioab~initio tight-binding Hamiltonians: effective tools for electronic transport and optical spectroscopy from first principles

The calculations of electronic transport coefficients and optical properties require a very dense interpolation of the electronic band structure in reciprocal space that is computationally expensive and may have issues with band crossing and degeneracies. Capitalizing on a recently developed pseudo-atomic orbital projection technique, we exploit the exact tight-binding representation of the first principles electronic structure for the purposes of (1) providing an efficient strategy to explore the full band structure En(k)E_n({\bf k}), (2) computing the momentum operator differentiating directly the Hamiltonian, and (3) calculating the imaginary part of the dielectric function. This enables us to determine the Boltzmann transport coefficients and the optical properties within the independent particle approximation. In addition, the local nature of the tight-binding representation facilitates the calculation of the ballistic transport within the Landauer theory for systems with hundreds of atoms. In order to validate our approach we study the multi-valley band structure of CoSb3_3 and a large core-shell nanowire using the ACBN0 functional. In CoSb3_3 we point the many band minima contributing to the electronic transport that enhance the thermoelectric properties; for the core-shell nanowire we identify possible mechanisms for photo-current generation and justify the presence of protected transport channels in the wire.

preprint2015arXiv

Pairing of few Fermi atoms in one dimension

We study a few Fermi atoms interacting through attractive contact forces in a one-dimensional trap by means of numerical exact diagonalization. From the combined analysis of energies and wave functions of correlated ground and excited states we find evidence of BCS-like pairing even for very few atoms. For moderate interaction strength, we reproduce the even-odd oscillation of the separation energy observed in [G. Zuern, A. N. Wenz, S. Murmann, A. Bergschneider, T. Lompe, and S. Jochim, Phys. Rev. Lett. 111, 175302 (2013)]. For strong interatomic attraction the arrangement of dimers in the trap differs from the homogeneous case as a consequence of Pauli blockade in real space.

preprint2014arXiv

Three interacting atoms in a one-dimensional trap: A benchmark system for computational approaches

We provide an accurate calculation of the energy spectrum of three atoms interacting through a contact force in a one-dimensional harmonic trap, considering both spinful fermions and spinless bosons. We use fermionic energies as a benchmark for exact-diagonalization technique (also known as full configuration interaction), which is found to slowly converge in the case of strong interatomic attraction.

preprint2013arXiv

Engineering interband tunneling in nanowires with diamond cubic or zincblende crystalline structure based on atomistic modeling

We present an investigation in the device parameter space of band-to-band tunneling in nanowires with a diamond cubic or zincblende crystalline structure. Results are obtained from quantum transport simulations based on Non-Equilibrium Green's functions with a tight-binding atomistic Hamiltonian. Interband tunneling is extremely sensitive to the longitudinal electric field, to the nanowire cross section, through the gap, and to the material. We have derived an approximate analytical expression for the transmission probability based on WKB theory and on a proper choice of the effective interband tunneling mass, which shows good agreement with results from atomistic quantum simulation.

preprint2009arXiv

Single-spin polaron memory effect

The single-spin memory effect is considered within a minimal polaron model describing a single-level quantum dot interacting with a vibron and weakly coupled to ferromagnetic leads. We show that in the case of strong electron-vibron and Coulomb interactions the rate of spontaneous quantum switching between two spin states is suppressed at zero bias voltage, but can be tuned through a wide range of finite switching timescales upon changing the bias. We further find that such junctions exhibit hysteretic behavior enabling controlled switching of a spin state. Spin lifetime, current and spin polarization are calculated as a function of the bias voltage by the master equation method. We also propose to use a third tunneling contact to control and readout the spin state.

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