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Researcher profile

Ping Cui

Ping Cui contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.mes-hallphysics.chem-phquant-ph

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Published work

9 published item(s)

preprint2022arXiv

Anisotropic Dzyaloshinskii-Moriya interaction and topological magnetism in two-dimensional magnets protected by P4-m2 crystal symmetry

As a fundamental magnetic parameter, Dzyaloshinskii-Moriya interaction (DMI), has gained a great deal of attention in the last two decades due to its critical role in formation of magnetic skyrmions. Recent discoveries of two-dimensional (2D) van der Waals (vdW) magnets has also gained a great deal of attention due to appealing physical properties, such as gate tunability, flexibility and miniaturization. Intensive studies have shown that isotropic DMI stabilizes ferromagnetic (FM) topological spin textures in 2D magnets or their corresponding heterostructures. However, the investigation of anisotropic DMI and antiferromagnetic (AFM) topological spin configurations remains elusive. Here, we propose and demonstrate that a family of 2D magnets with P4-m2 symmetry-protected anisotropic DMI. More interestingly, various topological spin configurations, including FM/AFM antiskyrmion and AFM vortex-antivortex pair, emerge in this family. These results give a general method to design anisotropic DMI and pave the way towards topological magnetism in 2D materials using crystal symmetry.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Distinct Reconstruction Patterns and Spin-Resolved Electronic States along the Zigzag Edges of Transition Metal Dichalcogenides

Two-dimensional transition metal dichalcogenides represent an emerging class of materials exhibiting various intriguing properties, and integration of such materials for potential device applications will necessarily encounter creation of different boundaries. Using first-principles approaches, here we investigate the structural, electronic, and magnetic properties along two inequivalent zigzag M and X edges of MX$_{2}$ (M=Mo, W; X=S, Se). Along the M edges, we reveal a previously unrecognized but energetically strongly preferred (2x1) reconstruction pattern, which is universally operative for all the MX$_{2}$, characterized by a self-passivation mechanism through place exchanges of the outmost X and M edge atoms. In contrast, the X edges undergo a more moderate (2x1) or (3x1) reconstruction for MoX$_{2}$ or WX$_{2}$, respectively. We further use the prototypical zigzag MoX$_{2}$ nanoribbons to demonstrate that the M and X edges possess distinctly different electronic and magnetic properties, which are discussed for spintronic and catalytic applications.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Orientationally Misaligned Zipping of Lateral Graphene and Boron Nitride Nanoribbons with Minimized Strain Energy and Enhanced Half-Metallicity

Lateral heterostructures of two-dimensional materials may exhibit various intriguing emergent properties. Yet when specified to the orientationally aligned heterojunctions of zigzag graphene and hexagonal boron nitride (hBN) nanoribbons, realizations of the high expectations on their properties encounter two standing hurtles. First, the rapid accumulation of strain energy prevents large- scale fabrication. Secondly, the pronounced half-metallicity predicted for freestanding graphene nanoribbons is severely suppressed. By properly tailoring orientational misalignment between zigzag graphene and chiral hBN nanoribbons, here we present a facile approach to overcome both obstacles. Our first-principles calculations show that the strain energy accumulation in such heterojunctions is significantly diminished for a range of misalignments. More strikingly, the half-metallicity is substantially enhanced from the orientationally aligned case, back to be comparable in magnitude with the freestanding case. The restored half-metallicity is largely attributed to the recovered superexchange interaction between the opposite heterojunction interfaces. The present findings may have important implications in eventual realization of graphene-based spintronics.

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preprint2013arXiv

Tuning the vertical location of helical surface states in topological insulator heterostructures via dual-proximity effects

In integrating topological insulators (TIs) with conventional materials, one crucial issue is how the topological surface states (TSS) will behave in such heterostructures. We use first-principles approaches to establish accurate tunability of the vertical location of the TSS via intriguing dual-proximity effects. By depositing a conventional insulator (CI) overlayer onto a TI substrate (Bi2Se3 or Bi2Te3), we demonstrate that, the TSS can float to the top of the CI film, or stay put at the CI/TI interface, or be pushed down deeper into the otherwise structurally homogeneous TI substrate. These contrasting behaviors imply a rich variety of possible quantum phase transitions in the hybrid systems, dictated by key material-specific properties of the CI. These discoveries lay the foundation for accurate manipulation of the real space properties of TSS in TI heterostructures of diverse technological significance.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Quantum Efficiency of Intermediate-Band Solar Cells Based on Non-Compensated n-p Codoped TiO2

As an appealing concept for developing next-generation solar cells, intermediate-band solar cells (IBSCs) promise to drastically increase the quantum efficiency of photovoltaic conversion. Yet to date, a standing challenge lies in the lack of materials suitable for developing IBSCs. Recently, a new doping approach, termed non-compensated n-p codoping, has been proposed to construct intermediate bands (IBs) in the intrinsic energy band gaps of oxide semiconductors such as TiO$_2$. We explore theoretically the optimal quantum efficiency of IBSCs based on non-compensated n-p codoped TiO$_2$ under two different design schemes. The first preserves the ideal condition that no electrical current be extracted from the IB. The corresponding maximum quantum efficiency for the codoped TiO$_2$ can reach 52.7%. In the second scheme, current is also extracted from the IB, resulting in a further enhancement in the maximum efficiency to 56.7%. Our findings also relax the stringent requirement that the IB location be close to the optimum value, making it more feasible to realize IBSCs with high quantum efficiencies.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Quantum Size Effect and Electronic Stability of Freestanding Metal Atom Wires

Using DFT calculations, we present a thorough study of the quantum size effects on the stability of freestanding metal atom wires. Our systems include Na, Ag, Au, In, Ga and Pb atom wires, i.e. $s$, $sd$, and $sp$ electron prototypes. We found that the total energy always oscillates with the wire length, which clearly indicates the existence of preferred lengths. Increasing the length, the s-system exhibits even-odd oscillations following a $a/x +b/x^2$ decay law in the stability, which can be attributed to electron band filling and quantum confinement along the wire. The $sd$-system exhibits a similar oscillation pattern, even in the presence of $sd$ hybridization. In $sp$-system, the energy oscillations are beyond the simple even-odd nature, likely due to unpaired p orbitals and the corresponding nontrival band filling. Our findings clearly demonstrate that electronic contribution is quite critical to the stability of freestanding wires, and this stability may be important even when wires are deposited on substrates or strained. This study sheds light on the underlying formation mechanism of metal atom wires.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Suppression of Grain Boundaries in Graphene Growth on Superstructured Mn-Cu(111) Surface

As undesirable defects, grain boundaries (GBs) are widespread in epitaxial graphene using existing growth methods on metal substrates. Employing density functional theory calculations, we first identify that the misorientations of carbon islands nucleated on a Cu(111) surface lead to the formation of GBs as the islands coalesce. We then propose a two-step kinetic pathway to effectively suppress the formation of GBs. In the first step, large aromatic hydrocarbon molecules are deposited onto a $\sqrt{3}\times\sqrt{3}$ superstructured Cu-Mn alloyed surface to seed the initial carbon clusters of a single orientation; in the second step, the seeded islands are enlarged through normal chemical vapor deposition of methane to form a complete graphene sheet. The present approach promises to overcome a standing obstacle in large scale single-crystal graphene fabrication.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Equivalent Circuit Description of Non-compensated n-p Codoped TiO2 as Intermediate Band Solar Cells

The novel concept of non-compensated n-p codoping has made it possible to create tunable intermediate bands in the intrinsic band gap of TiO2, making the codoped TiO2 a promising material for developing intermediate band solar cells (IBSCs). Here we investigate the quantum efficiency of such IBSCs within two scenarios - with and without current extracted from the extended intermediate band. Using the ideal equivalent circuit model, we find that the maximum efficiency of 57% in the first scenario and 53% in the second are both much higher than the Shockley-Queisser limit from single gap solar cells. We also obtain various key quantities of the circuits, a useful step in realistic development of TiO2 based solar cells invoking device integration. These equivalent circuit results are also compared with the efficiencies obtained directly from consideration of electron transition between the energy bands, and both approaches reveal the intriguing existence of double peaks in the maximum quantum efficiency as a function of the relative location of IBs.

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preprint2007arXiv

The quantum solvation, adiabatic versus nonadiabatic, and Markovian versus non-Markovian nature of electron transfer rate processes

In this work, we revisit the electron transfer rate theory, with particular interests in the distinct quantum solvation effect, and the characterizations of adiabatic/nonadiabatic and Markovian/non-Markovian rate processes. We first present a full account for the quantum solvation effect on the electron transfer in Debye solvents, addressed previously in J. Theore. & Comput. Chem. {\bf 5}, 685 (2006). Distinct reaction mechanisms, including the quantum solvation-induced transitions from barrier-crossing to tunneling, and from barrierless to quantum barrier-crossing rate processes, are shown in the fast modulation or low viscosity regime. This regime is also found in favor of nonadiabatic rate processes. We further propose to use Kubo's motional narrowing line shape function to describe the Markovian character of the reaction. It is found that a non-Markovian rate process is most likely to occur in a symmetric system in the fast modulation regime, where the electron transfer is dominant by tunneling due to the Fermi resonance.

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