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Pierre-André Mortemousque

Pierre-André Mortemousque appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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Published work

7 published item(s)

preprint2022arXiv

Complete readout of two-electron spin states in a double quantum dot

We propose and demonstrate complete spin state readout of a two-electron system in a double quantum dot probed by an electrometer. The protocol is based on repetitive single shot measurements using Pauli spin blockade and our ability to tune on fast timescales the detuning and the interdot tunnel coupling between the GHz and sub-Hz regime. A sequence of three distinct manipulations and measurements allows establishing if the spins are in S, Tzero, Tplus or Tminus state. This work points at a procedure to reduce the overhead for spin readout, an important challenge for scaling up spin qubit platforms.

preprint2022arXiv

Controlled quantum dot array segmentation via a highly tunable interdot tunnel coupling

Recent demonstrations using electron spins stored in quantum dots array as qubits are promising for developing a scalable quantum computing platform. An ongoing effort is therefore aiming at the precise control of the quantum dots parameters in larger and larger arrays which represents a complex challenge. Partitioning of the system with the help of the inter-dot tunnel barriers can lead to a simplification for tuning and offers a protection against unwanted charge displacement. In a triple quantum dot system, we demonstrate a nanosecond control of the inter-dot tunnel rate permitting to reach the two extreme regimes, large GHz tunnel coupling and sub-Hz isolation between adjacent dots. We use this novel development to isolate a sub part of the array while performing charge displacement and readout in the rest of the system. The degree of control over the tunnel coupling achieved in a unit cell should motivate future protocol development for tuning, manipulation and readout including this capability.

preprint2022arXiv

Parity and singlet-triplet high fidelity readout in a silicon double quantum dot at 0.5 K

We demonstrate singlet-triplet readout and parity readout allowing to distinguish T0 and the polarized triplet states. We achieve high fidelity spin readout with an average fidelity above $99.9\%$ for a readout time of $20~μ$s and $99\%$ for $4~μ$s at a temperature of $0.5~K$. We initialize a singlet state in a single dot with a fidelity higher than $99\%$ and separate the two electrons while keeping the same spin state with $a \approx 95.6\%$ fidelity.

preprint2020arXiv

Charge detection in an array of CMOS quantum dots

The recent development of arrays of quantum dots in semiconductor nanostructures highlights the progress of quantum devices toward large scale. However, how to realize such arrays on a scalable platform such as silicon is still an open question. One of the main challenge resides in the detection of charges within the array. It is a prerequisite functionality to initialize a desired charge state and readout spins through spin-to-charge conversion mechanisms. In this paper, we use two methods based on either a single-lead charge detector, or a reprogrammable single electron transistor. Thanks to these methods, we study the charge dynamics and sensitivity by performing single shot detection of the charge. Finally, we can probe the charge stability at any node of a linear array and assess the Coulomb disorder in the structure. We find an electrochemical potential fluctuation induced by charge noise comparable to that reported in other silicon quantum dots.

preprint2016arXiv

Injection of a single electron from static to moving quantum dots

We study the injection mechanism of a single electron from a static quantum dot into a moving quantum dot created in a long depleted channel with surface acoustic waves (SAWs). We demonstrate that such a process is characterized by an activation law with a threshold that depends on the SAW amplitude and the dot-channel potential gradient. By increasing sufficiently the SAW modulation amplitude, we can reach a regime where the transfer is unitary and potentially adiabatic. This study points at the relevant regime to use moving dots in quantum information protocols.

preprint2016arXiv

Quadrupolar Effects on Nuclear Spins of Neutral Arsenic Donors in Silicon

We present electrically detected electron nuclear double resonance measurements of the nuclear spins of ionized and neutral arsenic donors in strained silicon. In addition to a reduction of the hyperfine coupling, we find significant quadrupole interactions of the nuclear spin of the neutral donors of the order of 10 kHz. By comparing these to the quadrupole shifts due to crystal fields measured for the ionized donors, we identify the effect of the additional electron on the electric field gradient at the nucleus. This extra component is expected to be caused by the coupling to electric field gradients created due to changes in the electron wavefunction under strain.

preprint2014arXiv

Hyperfine Clock Transitions of Bismuth Donors in Silicon Detected by Spin Dependent Recombination

Bismuth donors ion-implanted in $^{28}$Si and $^\text{nat}$Si are studied using magnetic resonance spectroscopy based on spin dependent recombination. The hyperfine clock transition, at which the linewidth is significantly narrowed, is observed for the bismuth donors. The experimental results are modeled quantitatively by molecular orbital theory for a coupled pair consisting of a bismuth donor and a spin dependent recombination readout center, including the effect of hyperfine and Zeeman interactions.