Researcher profile

Philippe Roncin

Philippe Roncin contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2016arXiv

Helium diffraction on SiC grown graphene, qualitative and quantitative description with the hard corrugated wall model

The Moiré structure of epitaxial graphene mono layer grown on 6H-SiC(0001) has been investigated recently by grazing incidence fast atom diffraction, and the results were compared with the calculation of the structure \textit{ab initio} and exact diffraction codes. We review these results and present a complementary approach using the Hard Wall Model to extract information without any \textit{a priori}. Reversely, taking advantage of previous exact calculations we evaluate quantitatively the performance of this simplified approach by comparing predictions using the same potential energy surface.

preprint2016arXiv

Image processing for grazing incidence fast atom diffraction

Grazing incidence fast atom diffraction (GIFAD, or FAD) has developed as a surface sensitive technique. GIFAD is less sensitive to thermal decoherence but more demanding in terms of surface coherence, the mean distance between defects. Such high quality surfaces can be obtained from freshly cleaved crystals or in a molecular beam epitaxy (MBE) chamber where a GIFAD setup has been installed allowing in situ operation. Based on recent publications by Atkinson et al. and Debiossac et al, the paper describes in detail the basic steps needed to measure the relative intensities of the diffraction spots. Care is taken to outline the underlying physical assumptions.

preprint2015arXiv

Atom beam triangulation of organic layers at 100 meV normal energy: self-assembled perylene on Ag(110) at room temperature

The controlled growth of organic layer on surface is still awaiting for an on-line reliable monitoring that would allow improvement of its quality. We show here that the self-assembly of the perylene monolayer deposited on Ag(110) at room temperature can be tracked with low energy atoms in a regime where the energy perpendicular to the layer is less than 0.1 eV preventing damage to the layer. The image processing required for this triangulation technique with atoms is described in details.