Researcher profile

Philipp Zimmermann

Philipp Zimmermann contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2026arXiv

Calderón problem for nonlocal viscous wave equations: Unique determination of linear and nonlinear perturbations

The main goal of this article is to study a Calderón type inverse problem for certain viscous nonlocal wave equations. We show that the partial Dirichlet to Neumann map uniquely determines on the one hand linear perturbations and on the other hand homogeneous nonlinearities $f(u)$ whenever the latter satisfy a certain growth assumption. As a preliminary step we discuss the well-posedness in each case, where for the nonlinear setting we invoke the implicit function theorem after establishing the differentiability of the associated Nemytskii operator $f(u)$. In the linear case we establish a Runge approximation theorem in $L^2(0,T;\widetilde{H}^{s}(Ω))$, which allows us to uniquely determine potentials that belong only to $L^{\infty}(0,T;L^p(Ω))$ for some $1<p\leq \infty$ satisfying suitable restrictions. In the nonlinear case, we first derive an appropriate integral identity and combine this with the differentiability of the solution map around zero to show that the nonlinearity is uniquely determined by the Dirichlet to Neumann map. To make this linearization technique work, it is essential that we have a Runge approximation in $L^2(0,T;\widetilde{H}^s(Ω))$ instead of $L^2(Ω_T)$ at our disposal.

preprint2022arXiv

The global inverse fractional conductivity problem

We prove \emph{global} uniqueness for an inverse problem for the fractional conductivity equation on domains that are bounded in one direction. The conductivities are assumed to be isotropic and nontrivial in the exterior of the domain, while the data is given in the form of partial Dirichlet-to-Neumann (DN) maps measured in nondisjoint open subsets of the exterior. This can be seen as the fractional counterpart of the classical inverse conductivity problem. The proof is based on a unique continuation property (UCP) for the DN maps and an exterior determination method from the partial exterior DN maps. This is analogous to the classical boundary determination method by Kohn and Vogelius. The most important technical novelty is the construction of sequences of special solutions to the fractional conductivity equation whose Dirichlet energies in the limit can be concentrated at any given point in the exterior. This is achieved independently of the UCP and despite the nonlocality of the equation. Due to the recent counterexamples by the last two authors, our results almost completely characterize uniqueness for the inverse fractional conductivity problem with partial data for isotropic global conductivities.

preprint2020arXiv

Photo-physics and electronic structure of lateral graphene/MoS2 and metal/MoS2 junctions

Integration of semiconducting transition metal dichalcogenides (TMDs) into functional optoelectronic circuitries requires an understanding of the charge transfer across the interface between the TMD and the contacting material. Here, we use spatially resolved photocurrent microscopy to demonstrate electronic uniformity at the epitaxial graphene/molybdenum disulfide (EG/MoS2) interface. A 10x larger photocurrent is extracted at the EG/MoS2 interface when compared to metal (Ti/Au) /MoS2 interface. This is supported by semi-local density-functional theory (DFT), which predicts the Schottky barrier at the EG/MoS2 interface to be ~2x lower than Ti/MoS2. We provide a direct visualization of a 2D material Schottky barrier through combination of angle resolved photoemission spectroscopy with spatial resolution selected to be ~300 nm (nano-ARPES) and DFT calculations. A bending of ~500 meV over a length scale of ~2-3 micrometer in the valence band maximum of MoS2 is observed via nano-ARPES. We explicate a correlation between experimental demonstration and theoretical predictions of barriers at graphene/TMD interfaces. Spatially resolved photocurrent mapping allows for directly visualizing the uniformity of built-in electric fields at heterostructure interfaces, providing a guide for microscopic engineering of charge transport across heterointerfaces. This simple probe-based technique also speaks directly to the 2D synthesis community to elucidate electronic uniformity at domain boundaries alongside morphological uniformity over large areas.