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Ph. Ghosez

Ph. Ghosez contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2020arXiv

Bi2W2O9: a potentially antiferroelectric Aurivillius phase

Ferroelectric tungsten-based Aurivillius oxides are naturally stable superlattice structures, in which A-site deficient perovskite blocks [WnO3n+1]-2 (n = 1, 2, 3, ...) interleave with fluorite-like bismuth oxide layers [Bi2O2]+2 along the c -axis. In the n = 2 Bi2W2O9 phase, an in-plane antipolar distortion dominates but there has been controversy as to the ground state symmetry. Here we show, using a combination of first-principles density functional theory calculations and experiments, that the ground state is a non-polar phase of Pnab symmetry. We explore the energetics of metastable phases and the potential for antiferroelectricity in this n=2 Aurivillius phase.

preprint2012arXiv

Interstitial Transition Metal Doping in Hydrogen Saturated Silicon Nanowires

We report a first principles systematic study of atomic, electronic, and magnetic properties of hydrogen saturated silicon nanowires (H-SiNW) which are doped by transition metal (TM) atoms placed at various interstitial sites. Our results obtained within the conventional GGA+U approach have been confirmed using an hybrid functional. In order to reveal the surface effects we examined three different possible facets of H-SiNW along [001] direction with a diameter of ~2nm. The energetics of doping and resulting electronic and magnetic properties are examined for all alternative configurations. We found that except Ti, the resulting systems have magnetic ground state with a varying magnetic moment. While H-SiNWs are initially non-magnetic semiconductor, they generally become ferromagnetic metal upon TM doping. Even they posses half-metallic behavior for specific cases. Our results suggest that H-SiNWs can be functionalized by TM impurities which would lead to new electronic and spintronic devices at nanoscale.

preprint2011arXiv

Intrinsic origin of the two-dimensional electron gas at polar oxide interfaces

The predictions of the polar catastrophe scenario to explain the occurrence of a metallic interface in heterostructures of the solid solution(LaAlO$_3$)$_{x}$(SrTiO$_3$)$_{1-x}$ (LASTO:x) grown on (001) SrTiO$_3$ were investigated as a function of film thickness and $x$. The films are insulating for the thinnest layers, but above a critical thickness, $t_c$, the interface exhibits a constant finite conductivity which depends in a predictable manner on $x$. It is shown that $t_c$ scales with the strength of the built-in electric field of the polar material, and is immediately understandable in terms of an electronic reconstruction at the nonpolar-polar interface. These results thus conclusively identify the polar-catastrophe model as the intrinsic origin of the doping at this polar oxide interface.