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Ph. Ghosez

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cond-mat.mtrl-sci mtrl-th

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preprint2020arXiv

Bi2W2O9: a potentially antiferroelectric Aurivillius phase

Ferroelectric tungsten-based Aurivillius oxides are naturally stable superlattice structures, in which A-site deficient perovskite blocks [WnO3n+1]-2 (n = 1, 2, 3, ...) interleave with fluorite-like bismuth oxide layers [Bi2O2]+2 along the c -axis. In the n = 2 Bi2W2O9 phase, an in-plane antipolar distortion dominates but there has been controversy as to the ground state symmetry. Here we show, using a combination of first-principles density functional theory calculations and experiments, that the ground state is a non-polar phase of Pnab symmetry. We explore the energetics of metastable phases and the potential for antiferroelectricity in this n=2 Aurivillius phase.

preprint2012arXiv

Incipient ferroelectricity in 2.3% tensile-strained CaMnO3 films

Epitaxial CaMnO3 films grown with 2.3% tensile strain on (001)-oriented LaAlO3 substrates are found to be incipiently ferroelectric below 25 K. Optical second harmonic generation (SHG) was used for the detection of the incipient polarization. The SHG analysis reveals that CaMnO3 crystallites with in-plane orientation of the orthorhombic b axis contribute to an electric polarization oriented along the orthorhombic a (resp.\ c) axis in agreement with the predictions from density functional calculations.

preprint2012arXiv

Interstitial Transition Metal Doping in Hydrogen Saturated Silicon Nanowires

We report a first principles systematic study of atomic, electronic, and magnetic properties of hydrogen saturated silicon nanowires (H-SiNW) which are doped by transition metal (TM) atoms placed at various interstitial sites. Our results obtained within the conventional GGA+U approach have been confirmed using an hybrid functional. In order to reveal the surface effects we examined three different possible facets of H-SiNW along [001] direction with a diameter of ~2nm. The energetics of doping and resulting electronic and magnetic properties are examined for all alternative configurations. We found that except Ti, the resulting systems have magnetic ground state with a varying magnetic moment. While H-SiNWs are initially non-magnetic semiconductor, they generally become ferromagnetic metal upon TM doping. Even they posses half-metallic behavior for specific cases. Our results suggest that H-SiNWs can be functionalized by TM impurities which would lead to new electronic and spintronic devices at nanoscale.

preprint2011arXiv

Intrinsic origin of the two-dimensional electron gas at polar oxide interfaces

The predictions of the polar catastrophe scenario to explain the occurrence of a metallic interface in heterostructures of the solid solution(LaAlO$_3$)$_{x}$(SrTiO$_3$)$_{1-x}$ (LASTO:x) grown on (001) SrTiO$_3$ were investigated as a function of film thickness and $x$. The films are insulating for the thinnest layers, but above a critical thickness, $t_c$, the interface exhibits a constant finite conductivity which depends in a predictable manner on $x$. It is shown that $t_c$ scales with the strength of the built-in electric field of the polar material, and is immediately understandable in terms of an electronic reconstruction at the nonpolar-polar interface. These results thus conclusively identify the polar-catastrophe model as the intrinsic origin of the doping at this polar oxide interface.

preprint1995arXiv

Density-Polarization Functional Theory of the response of a periodic insulating solid to an electric field.

The response of an infinite, periodic, insulating, solid to an infinitesimally small electric field is investigated in the framework of Density Functional Theory. We find that the applied perturbing potential is not a unique functional of the periodic density change~: it depends also on the change in the macroscopic {\em polarization}. Moreover, the dependence of the exchange-correlation energy on polarization induces an exchange-correlation electric field. These effects are exhibited for a model semiconductor. We also show that the scissor-operator technique is an approximate way of bypassing this polarization dependence.