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Researcher profile

Ph. Avouris

Ph. Avouris contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sci

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Published work

4 published item(s)

preprint2013arXiv

Phonon mediated interlayer conductance in twisted graphene bilayers

Conduction between graphene layers is suppressed by momentum conservation whenever the layer stacking has a rotation. Here we show that phonon scattering plays a crucial role in facilitating interlayer conduction. The resulting dependence on orientation is radically different than previously expected, and far more favorable for device applications. At low temperatures, we predict diode-like current-voltage characteristics due to a phonon bottleneck. Simple scaling relationships give a good description of the conductance as a function of temperature, doping, rotation angle, and bias voltage, reflecting the dominant role of the interlayer beating phonon mode.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

The role of contacts in graphene transistors: A scanning photocurrent study

A near-field scanning optical microscope is used to locally induce photocurrent in a graphene transistor with high spatial resolution. By analyzing the spatially resolved photo-response, we find that in the n-type conduction regime a p-n-p structure forms along the graphene device due to the doping of the graphene by the metal contacts. The modification of the electronic structure is not limited only underneath the metal electrodes, but extends 0.2-0.3 um into the graphene channel. The asymmetric conduction behavior of electrons and holes that is commonly observed in graphene transistors is discussed in light of the potential profiles obtained from this photocurrent imaging approach. Furthermore, we show that photocurrent imaging can be used to probe single- / multi-layer graphene interfaces.

0 citations0 reviewsNo code linkedOpen access
preprint2002arXiv

Carbon Nanotubes as Schottky Barrier Transistors

We show that carbon nanotube transistors operate as unconventional "Schottky barrier transistors", in which transistor action occurs primarily by varying the contact resistance rather than the channel conductance. Transistor characteristics are calculated for both idealized and realistic geometries, and scaling behavior is demonstrated. Our results explain a variety of experimental observations, including the quite different effects of doping and adsorbed gases. The electrode geometry is shown to be crucial for good device performance.

0 citations0 reviewsNo code linkedOpen access
preprint1999arXiv

Conductance of Distorted Carbon Nanotubes

We have calculated the effects of structural distortions of armchair carbon nanotubes on their electrical transport properties. We found that the bending of the nanotubes decreases their transmission function in certain energy ranges and leads to an increased electrical resistance. Electronic structure calculations show that these energy ranges contain localized states with significant $σ$-$π$ hybridization resulting from the increased curvature produced by bending. Our calculations of the contact resistance show that the large contact resistances observed for SWNTs are likely due to the weak coupling of the NT to the metal in side bonded NT-metal configurations.

0 citations0 reviewsNo code linkedOpen access