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Peter Grutter

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2 publications

preprint2020arXiv

Direct Imaging, Three-dimensional Interaction Spectroscopy, and Friction Anisotropy of Atomic-scale Ripples on MoS2_{2}

Theory predicts that two-dimensional (2D) materials may only exist in the presence of out-ofplane deformations on atomic length scales, frequently referred to as ripples. While such ripples can be detected via electron microscopy, their direct observation via surface-based techniques and characterization in terms of interaction forces and energies remain limited, preventing an unambiguous study of their effect on mechanical characteristics, including but not limited to friction anisotropy. Here, we employ high-resolution atomic force microscopy to demonstrate the presence of atomic-scale ripples on supported samples of few-layer molybdenum disulfide (MoS2_{2}). Three-dimensional force / energy spectroscopy is utilized to study the effect of ripples on the interaction landscape. Friction force microscopy reveals multiple symmetries for friction anisotropy, explained by studying rippled sample areas as a function of scan size. Our experiments contribute to the continuing development of a rigorous understanding of the nanoscale mechanics of 2D materials.

preprint2015arXiv

Kelvin probe force microscopy by direct dissipative electrostatic force modulation

We report a new experimental technique for Kelvin probe force microscopy (KPFM) using the dissipation signal of frequency modulation atomic force microscopy for bias voltage feedback. It features a simple implementation and faster scanning as it requires no low frequency modulation. The dissipation is caused by the oscillating electrostatic force that is coherent with the tip oscillation, which is induced by a sinusoidally oscillating voltage applied between the tip and sample. We analyzed the effect of the phase of the oscillating force on the frequency shift and dissipation and found that the relative phase of 90∘^\circ that causes only the dissipation is the most appropriate for KPFM measurements. The present technique requires a significantly smaller ac voltage amplitude by virtue of enhanced force detection due to the resonance enhancement and the use of fundamental flexural mode oscillation for electrostatic force detection. This feature will be of great importance in the electrical characterizations of technically relevant materials whose electrical properties are influenced by the externally applied electric field as is the case in semiconductor electronic devices.

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