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Pawel Strak

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cond-mat.mtrl-sci physics.comp-ph cond-mat.mes-hall math.NA quant-ph

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preprint2018arXiv

On Composite Discontinuous Galerkin Method for simulations of electric properties of semiconductor devices

In this paper, a variant of discretization of the van Roosbroeck equations in the equilibrium state with the Composite Discontinuous Galerkin Method for the rectangular domain is discussed. It is based on Symmetric Interior Penalty Galerkin (SIPG) method. The proposed method accounts for lower regularity of the solution on the interfaces of devices' layers. It is shown that the discrete problem is well-defined and that discrete solution is unique. Error estimates are derived. Finally, numerical simulations are presented.

preprint2013arXiv

Fermi level influence on the adsorption at semiconductor surfaces - ab initio simulations

Chemical adsorption of the species at semiconductor surfaces is analyzed showing the existence of the two contributions to adsorption energy: bond creation and charge transfer. It is shown that the energy of quantum surface states is affected by the electric field at the surface, nevertheless the potential contribution of electron and nuclei cancels out. The charge transfer contribution is Fermi level independent for pinned surfaces. Thus for Fermi level pinned at the surface, the adsorption energy is independent on the Fermi energy i.e. the doping in the bulk. The DFT simulations of adsorption of hydrogen at clean GaN(0001) and silicon at SiC(0001) surfaces confirmed independence of adsorption energy on the doping in the bulk. For the Fermi level nonpinned surfaces the charge contribution depends on the position of Fermi level in the bulk. Thus adsorption energy is sensitive to change of the Fermi energy in the bulk, i.e. the doping. The DFT simulations of adsorption of atomic hydrogen at 0.75 ML hydrogen covered GaN(0001) surface confirmed that the adsorption energy may be changed by about 2 eV by the doping change from n- to p-type.

preprint2013arXiv

General aspects of the vapor growth of semiconductor crystals - a study based on DFT simulations of the NH3/NH2 covered GaN(0001) surface in hydrogen ambient

Vapor growth of semiconductors is analyzed using recently obtained dependence of the adsorption energy on the electron charge transfer between the surface adsorbed species and the bulk [Krukowski et al. J. Appl. Phys. 114 (2013) 063507, Kempisty et al. ArXiv 1307.5778 (2013)]. Ab initio calculations were performed to study the physical properties of GaN(0001) surface in ammonia-rich conditions, i.e. covered by mixture of NH3 molecules and NH2 radicals. The Fermi level is pinned at valence band maximum (VBM) and conduction band minimum (CBM) for full coverage by NH3 molecules and NH2 radicals, respectively. For the crossover content of ammonia of about 25% monolayer (ML), the Fermi level is unpinned. It was shown that hydrogen adsorption energy depends on the doping in the bulk for the unpinned Fermi level, i.e. for this coverage. Surface structure thermodynamic and mechanical stability criteria are defined and compared. Mechanical stability of the coverage of such surfaces was checked by determination of the desorption energy of hydrogen molecules. Thermodynamic stability analysis indicates that initally equilibrium hydrogen vapor partial pressure steeply increases with NH3 content to attain the crossover NH3/NH2 coverage, i.e. the unpinned Fermi level condition. For such condition the entire range of experimentally accessible pressures belongs showing that vapor growth of semiconductor crystals occurs predominantly for unpinned Fermi level at the surface, i.e. for flat bands. Accordingly, adsorption energy of most species depends on the doping in the bulk that is basis of the possible molecular scenario explaining dependence of the growth and the doping of semiconductor crystals on the doping in the bulk

preprint2012arXiv

High efficiency UV emitters - theoretical investigation of GaN/AlN heterostructures

Density functional theory simulations were used to obtain physical properties of GaN/AlN system. Combination of these two compounds into multiquantum well (MQW) structure will induce strong electrostatic effect leading to emergence of high magnitude dipole layers at the AlN/GaN interfaces, which were first postulated by {Tersoff Phys. Rev. B 30(8) pp.4874 (1984)} and already identified in GaN/InN by {Romanowski et al. J. Phys. Chem C 114. 14410 (2010)}. When combining GaN and AlN in to a heterostructure a spatial projection of wavefunctions indicate that valence band offset between states becomes of order of 0.85 V. Systematic analysis of influence of number of Ga atomic layers on the properties of wells have shown that for thickness up to 4 Ga layers, GaN behave as carriers locating potential minimum rather, while for larger thickness it is a standard quantum well. In all cases wells has strongly localized quantum states close to valance band maxima (VBM) and conduction band minimum (CBM). The calculated oscillator strength values rapidly decreases for the well thickness in excess of 8 Ga layers (~21 Å) which indicates that wells for UV emitters should be much thinner than these based on InGaN/GaN systems. The Quantum Confined Stark Effect (QCSE) related changes of the transition energy in function of the geometric arrangement were also obtained.

preprint2011arXiv

Polarization and polarization induced electric field in nitrides - critical evaluation based on DFT studies

Density Functional Theory (DFT) calculations were used to evaluate polarity of group III nitrides, such as aluminum nitride (AlN), gallium nitride (GaN) and indium nitride (InN) providing physically sound quantitative measure of polarity of these materials. Two different approaches to polarization of nitride semiconductors were assessed and the conclusions have been used to develop models. It was shown that Berry phase formulation of the electron related polarization component provides a number of various solutions, different for various selection of the simulated volume. The electronic part gives saw-like pattern for polarization. A total number of these solutions, related to well known scaling of the geometric phase, is equal to the number of valence electrons in the system. Summation with similar pattern for ionic part provides several polarization values. Standard dipole density formulation depends on the selection of the simulation volume in periodic continuous way. Using a condition of continuous embedding into the infinite medium, and simultaneously, the zero surface charge representation at crystal boundary provides to physically sound solution. This solution is corresponding to maximal and minimal polarization values and also corresponds to different physical termination of the crystal surfaces, either bare or covered by complementary atoms. This change leads to polarization and electric field reversal. The polarization and related fields in finite size systems were obtained.