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Researcher profile

Pawel Strak

Pawel Strak contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
physics.comp-phcond-mat.mes-hallcond-mat.mtrl-scimath.NAquant-ph

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Published work

3 published item(s)

preprint2018arXiv

On Composite Discontinuous Galerkin Method for simulations of electric properties of semiconductor devices

In this paper, a variant of discretization of the van Roosbroeck equations in the equilibrium state with the Composite Discontinuous Galerkin Method for the rectangular domain is discussed. It is based on Symmetric Interior Penalty Galerkin (SIPG) method. The proposed method accounts for lower regularity of the solution on the interfaces of devices' layers. It is shown that the discrete problem is well-defined and that discrete solution is unique. Error estimates are derived. Finally, numerical simulations are presented.

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preprint2012arXiv

High efficiency UV emitters - theoretical investigation of GaN/AlN heterostructures

Density functional theory simulations were used to obtain physical properties of GaN/AlN system. Combination of these two compounds into multiquantum well (MQW) structure will induce strong electrostatic effect leading to emergence of high magnitude dipole layers at the AlN/GaN interfaces, which were first postulated by {Tersoff Phys. Rev. B 30(8) pp.4874 (1984)} and already identified in GaN/InN by {Romanowski et al. J. Phys. Chem C 114. 14410 (2010)}. When combining GaN and AlN in to a heterostructure a spatial projection of wavefunctions indicate that valence band offset between states becomes of order of 0.85 V. Systematic analysis of influence of number of Ga atomic layers on the properties of wells have shown that for thickness up to 4 Ga layers, GaN behave as carriers locating potential minimum rather, while for larger thickness it is a standard quantum well. In all cases wells has strongly localized quantum states close to valance band maxima (VBM) and conduction band minimum (CBM). The calculated oscillator strength values rapidly decreases for the well thickness in excess of 8 Ga layers (~21 Å) which indicates that wells for UV emitters should be much thinner than these based on InGaN/GaN systems. The Quantum Confined Stark Effect (QCSE) related changes of the transition energy in function of the geometric arrangement were also obtained.

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preprint2011arXiv

Polarization and polarization induced electric field in nitrides - critical evaluation based on DFT studies

Density Functional Theory (DFT) calculations were used to evaluate polarity of group III nitrides, such as aluminum nitride (AlN), gallium nitride (GaN) and indium nitride (InN) providing physically sound quantitative measure of polarity of these materials. Two different approaches to polarization of nitride semiconductors were assessed and the conclusions have been used to develop models. It was shown that Berry phase formulation of the electron related polarization component provides a number of various solutions, different for various selection of the simulated volume. The electronic part gives saw-like pattern for polarization. A total number of these solutions, related to well known scaling of the geometric phase, is equal to the number of valence electrons in the system. Summation with similar pattern for ionic part provides several polarization values. Standard dipole density formulation depends on the selection of the simulation volume in periodic continuous way. Using a condition of continuous embedding into the infinite medium, and simultaneously, the zero surface charge representation at crystal boundary provides to physically sound solution. This solution is corresponding to maximal and minimal polarization values and also corresponds to different physical termination of the crystal surfaces, either bare or covered by complementary atoms. This change leads to polarization and electric field reversal. The polarization and related fields in finite size systems were obtained.

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