Source author record

Pavle Stipsić

Explore this author’s publications, collaborators and research topics. This catalog record has not been claimed by its author.

ResearcherUnclaimed source record

cond-mat.mes-hall

Catalog footprint

Research overview

2works

1topics

3close collaborators

Actions

Is this your work?

Open graph Browse papers

preprint2020arXiv

Control of a spin qubit in a lateral GaAs quantum dot based on symmetry of gating potential

We study the influence of quantum dot symmetry on the Rabi frequency and phonon induced spin relaxation rate in a single electron GaAs spin qubit. We find that anisotropic dependence on the magnetic field direction is independent of the choice of the gating potential. Also, we discover that relative orientation of the quantum dot, with respect to the crystallographic frame, is relevant in systems with ${\bf C}_{1{\rm v}}$ , ${\bf C}_{2{\rm v}}$ , or ${\bf C}_{n}$ ( $n\neq4r$ ) symmetry. To demonstrate the important impact of the gating potential shape on the spin qubit lifetime, we compare the effects of an equilateral triangle, square, and rectangular confinement with the known results for the harmonic potential. In the studied cases, enhanced spin qubit lifetime is revealed, reaching almost six orders of magnitude increase for the equilateral triangle gating.

preprint2020arXiv

Electrical control of a spin qubit in InSb nanowire quantum dots: strongly suppressed spin relaxation in high magnetic field

In this paper, we investigate the impact of gating potential and magnetic field on phonon induced spin relaxation rate and the speed of the electrically driven single-qubit operations inside the InSb nanowire spin qubit. We show that a strong $g$ factor and high magnetic field strength lead to the prevailing influence of electron-phonon scattering due to deformation potential, considered irrelevant for materials with a weak $g$ factor, like GaAs or Si/SiGe. In this regime, we find that spin relaxation between qubit states is significantly suppressed due to the confinement perpendicular to the nanowire axis. We also find that maximization of the number of single-qubit operations that can be performed during the lifetime of the spin qubit requires single quantum dot gating potential.

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.