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Researcher profile

Pavel Procházka

Pavel Procházka contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.supr-con

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Published work

4 published item(s)

preprint2022arXiv

The Role of Phase Stabilization and Surface Orientation in 4,4'-Biphenyl-Dicarboxylic Acid Self-Assembly and Transformation on Silver Substrates

Molecular functionalization of nanoparticles and metallic substrates can be used to tune their properties for specific applications. However, polycrystalline substrates and nanoparticles exhibit surface planes with distinct crystallographic orientations. Therefore, the development of reliable strategies for molecular functionalization requires knowledge of the role of the surface plane orientation in the growth kinetics, structure, and properties of the molecular layer. Here, we apply a multiscale analysis to investigate the self-assembly of 4,4'-biphenyl-dicarboxylic acid (BDA) on Ag(111) and critically discuss the difference to Ag(100). Whereas the structural motifs for intact and fully deprotonated BDA are similar on both surfaces, the intermediate phases comprising partially deprotonated BDA differ in the structure and chemical composition. A real-time view of the phase transformations enables us to present a generalized picture of the phase transformations between the self-assembled molecular phases on the surfaces and underline important features such as the phase stabilization of the chemical composition and the mechanism of the related burst transformation. The influence of the substrate orientation on the structure of molecular layers and phase transformations provides the necessary background for developing functionalization strategies of the substrates displaying multiple surface planes and kinetic models for the growth near thermodynamic equilibrium.

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preprint2022arXiv

Tunable Energy Level Alignment in the Multilayers of Carboxylic Acids on Silver

The precise energy level alignment between a metal electrode and an organic semiconductor is required to reduce contact resistance and enhance the efficiency of organic-semiconductor-based devices. One of the ways is to include interlayers that mediate the energy level alignment, i.e., charge injection layers (CILs). Here we introduce the monolayer thick CILs based on the aromatic carboxylic acids that can induce the energy level shift in the subsequent layers by up to 0.8 eV. By gradual chemical transformation of the as-deposited molecules, we achieve a highly tunable energy level shift in the range of 0.5 eV. We reveal that the position of both the work function and energy-level position in the CIL increases linearly with the density of induced dipoles. The energy level position of subsequent layers changes in the same way as the CIL. Our results thus connect the energy alignment quantities, i.e., energy level positions of both CIL and subsequent layers and sample work function. The high tunability would allow precise tuning of the active layers deposited on the CIL, which marks the path towards efficient charge injection layers on metal electrodes.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Single-layer graphene on epitaxial FeRh thin films

Graphene is a 2D material that displays excellent electronic transport properties with prospective applications in many fields. Inducing and controlling magnetism in the graphene layer, for instance by proximity of magnetic materials, may enable its utilization in spintronic devices. This paper presents fabrication and detailed characterization of single-layer graphene formed on the surface of epitaxial FeRh thin films. The magnetic state of the FeRh surface can be controlled by temperature, magnetic field or strain due to interconnected order parameters. Characterization of graphene layers by X-ray Photoemission and X-ray Absorption Spectroscopy, Low-Energy Ion Scattering, Scanning Tunneling Microscopy, and Low-Energy Electron Microscopy shows that graphene is single-layer, polycrystalline and covers more than 97% of the substrate. Graphene displays several preferential orientations on the FeRh(001) surface with unit vectors of graphene rotated by 30°, 15°, 11°, and 19° with respect to FeRh substrate unit vectors. In addition, the graphene layer is capable to protect the films from oxidation when exposed to air for several months. Therefore, it can be also used as a protective layer during fabrication of magnetic elements or as an atomically thin spacer, which enables incorporation of switchable magnetic layers within stacks of 2D materials in advanced devices.

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preprint2019arXiv

Step-edge assisted large scale FeSe monolayer growth on epitaxial Bi2Se3 thin films

The interest in Fe-chalcogenide unconventional superconductors is intense after the critical temperature of FeSe was reported enhanced by more than one order of magnitude in the monolayer limit at the interface to an insulating oxide substrate. In heterostructures comprising interfaces of FeSe with topological insulators, additional interesting physical phenomena is predicted to arise e.g. in form of {\it topological superconductivity}. So far superconductive properties of Fe-chalcogenide monolayers were mostly studied by local scanning tunneling spectroscopy experiments, which can detect pseudo-gaps in the density of states as an indicator for Cooper pairing. Direct macroscopic transport properties which can prove or falsify a superconducting phase were rarely reported due to the difficulty to grow films with homogeneous material properties. Here we report on a promising growth method to fabricate continuous carpets of monolayer thick FeSe on molecular beam epitaxy grown Bi$_2$Se$_3$ topological insulator thin films. In contrast to previous works using atomically flat cleaved bulk Bi$_2$Se$_3$ crystal surfaces we observe a strong influence of the high step-edge density (terrace width about 10~nm) on MBE-grown Bi$_2$Se$_3$ substrates, which significantly promotes the growth of coalescing FeSe domains with small tetragonal crystal distortion without compromising the underlying Bi$_2$Se$_3$ crystal structure.

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