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Pavel G. Baranov

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cond-mat.mes-hall cond-mat.mtrl-sci quant-ph

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preprint2021arXiv

Multi-photon multi-quantum transitions in the spin-3/2 silicon-vacancy centers of SiC

Silicon vacancy centers in silicon carbide are promising candidates for storing and manipulating quantum information. Implementation of fast quantum gates is an essential requirement for quantum information processing. In a low magnetic field, the resonance frequencies of silicon vacancy spins are in the range of a few MHz, the same order of magnitude as the Rabi frequencies of typical control fields. As a consequence, the rotating wave approximation becomes invalid and nonlinear processes like the absorption and emission of multiple photons become relevant. This work focuses on multi-photon transitions of negatively charged silicon vacancies driven by a strong RF field. We present continuous-wave optically detected magnetic resonance (ODMR) spectra measured at different RF powers to identify the 1-, 2-, and 3-RF photon transitions of different types of the silicon vacancy in the 6$H$-SIC polytype. Time-resolved experiments of Rabi oscillations and free induction decays of these multiple RF photon transitions were observed for the first time. Apart from zero-field data, we also present spectra in magnetic fields with different strength and orientation with respect to the system's symmetry axis.

preprint2020arXiv

Experimental characterization of spin-3/2 silicon vacancy centers in 6H-SiC

Silicon carbide (SiC) hosts many interesting defects that can potentially serve as qubits for a range of advanced quantum technologies. Some of them have very interesting properties, making them potentially useful, e.g. as interfaces between stationary and flying qubits. Here we present a detailed overview of the relevant properties of the spins in silicon vacancies of the 6H-SiC polytype. This includes the temperature-dependent photoluminescence, optically detected magnetic resonance, and the relaxation times of the longitudinal and transverse components of the spins, during free precession as well as under the influence of different refocusing schemes.

preprint2013arXiv

Point defects in SiC as a promising basis for single-defect, single-photon spectroscopy with room temperature controllable quantum states

The unique quantum properties of the nitrogen-vacancy (NV) center in diamond have motivated efforts to find defects with similar properties in silicon carbide (SiC), which can extend the functionality of such systems not available to the diamond. Electron paramagnetic resonance (EPR) and optically detected magnetic resonance (ODMR) investigations presented here suggest that silicon vacancy (VSi) related point defects in SiC possess properties the similar to those of the NV center in diamond, which in turn make them a promising quantum system for single-defect and single-photon spectroscopy in the infrared region. Depending on the defect type, temperature, SiC polytype, and crystalline position, two opposite schemes have been observed for the optical alignment of the ground state spin sublevels population of the VSi-related defects upon irradiation with unpolarized light. Spin ensemble of VSi-related defects are shown to be prepared in a coherent superposition of the spin states even at room temperature. Zero-field ODMR shows the possibility to manipulate of the ground state spin population by applying radiofrequency field. These altogether make VSi-related defects in SiC very favorable candidate for spintronics, quantum information processing, and magnetometry.

preprint2012arXiv

Room temperature coherent spin alignment of silicon vacancies in 4H- and 6H-SiC

We report the realization of the optically induced inverse population of the ground-state spin sublevels of the silicon vacancies ($V_{\mathrm{Si}}$) in silicon carbide (SiC) at room temperature. The data show that the probed silicon vacancy spin ensemble can be prepared in a coherent superposition of the spin states. Rabi nutations persist for more than 80 $μ$s. Two opposite schemes of the optical alignment of the populations between the ground-state spin sublevels of the silicon vacancy upon illumination with unpolarized light are realized in 4H- and 6H-SiC at room temperature. These altogether make the silicon vacancy in SiC a very favorable defect for spintronics, quantum information processing, and magnetometry.