BZPEERPapers, people, evidence and research paths
Menu

Discover

SearchFind papers, people, topics, institutions and opportunities from one place.GraphSee how papers, authors, topics and evidence connect.

Research tools

HomeContinue from the papers, people and topics that matter now.CollectionsTurn saved papers into reading lists, evidence maps and shareable context.ResearchReconstruct the path that led you from search to paper to question.CollaborationMove from a paper, topic or expert request into a focused thread.PublishCreate full-text research articles with metadata, formulas and versions.

Network

ExpertsFind specialists whose work and reviews explain why they can help.CommunitiesJoin research groups organized around papers, topics and shared evidence.

Opportunities

ListingsBrowse roles, calls and collaborations connected to real research context.

Account

Log inReturn to your saved papers, graph views and active threads.Create accountStart saving papers, building a research trail and joining teams.
Log inCreate account

Source author record

Paul A. Crowell

Paul A. Crowell appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
cond-mat.mtrl-scicond-mat.mes-hall

Catalog footprint

What is connected

7works
2topics
4close collaborators

Actions

Connect this record

Log in to claim
Open graphBrowse works

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

7 published item(s)

preprint2023arXiv

First Principles Study of the Electronic Structure of the Ni$_2$MnIn/InAs and Ti$_2$MnIn/InSb interfaces

We present a first-principles study of the electronic and magnetic properties of epitaxial interfaces between the Heusler compounds Ti$_2$MnIn and Ni$_2$MnIn and the III-V semiconductors, InSb and InAs, respectively. We use density functional theory (DFT) with a machine-learned Hubbard $U$ correction determined by Bayesian optimization. We evaluate these interfaces for prospective applications in Majorana-based quantum computing and spintronics. In both interfaces, states from the Heusler penetrate into the gap of the semiconductor, decaying within a few atomic layers. The magnetic interactions at the interface are weak and local in space and energy. Magnetic moments of less than 0.1 $μ_B$ are induced in the two atomic layers closest to the interface. The induced spin polarization around the Fermi level of the semiconductor also decays within a few atomic layers. The decisive factor for the induced spin polarization around the Fermi level of the semiconductor is the spin polarization around the Fermi level in the Heusler, rather than the overall magnetic moment. As a result, the ferrimagnetic narrow-gap semiconductor Ti$_2$MnIn induces a more significant spin polarization in the InSb than the ferromagnetic metal Ni$_2$MnIn induces in the InAs. This is explained by the position of the transition metal $d$ states in the Heusler with respect to the Fermi level. Based on our results, these interfaces are unlikely to be useful for Majorana devices but could be of interest for spintronics.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Anomalous temperature dependence of phonon pumping by ferromagnetic resonance in Co/Pd multilayers with perpendicular anisotropy

We demonstrate the pumping of phonons by ferromagnetic resonance in a series of [Co(0.8 nm)/Pd(1.5 nm)]$_n$ multilayers ($n =$ 6, 11, 15, and 20) with large magnetostriction and perpendicular magnetic anisotropy. The effect is shown using broadband ferromagnetic resonance over a range of temperatures (10 to 300 K), where a resonant damping enhancement is observed at frequencies corresponding to standing wave phonons across the multilayer. The strength of this effect is enhanced by approximately a factor of 4 at 10 K compared to room temperature, which is anomalous in the sense that the temperature dependence of the magnetostriction predicts an enhancement that is less than a factor of 2. Lastly, we demonstrate that the damping enhancement is correlated with a shift in the ferromagnetic resonance field as predicted quantitatively from linear response theory.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

The interplay of large two-magnon ferromagnetic resonance linewidths and low Gilbert damping in Heusler thin films

We report on broadband ferromagnetic resonance linewidth measurements performed on epitaxial Heusler thin films. A large and anisotropic two-magnon scattering linewidth broadening is observed for measurements with the magnetization lying in the film plane, while linewidth measurements with the magnetization saturated perpendicular to the sample plane reveal low Gilbert damping constants of $(1.5\pm0.1)\times 10^{-3}$, $(1.8\pm0.2)\times 10^{-3}$, and $<8\times 10^{-4}$ for Co$_2$MnSi/MgO, Co$_2$MnAl/MgO, and Co$_2$FeAl/MgO, respectively. The in-plane measurements are fit to a model combining Gilbert and two-magnon scattering contributions to the linewidth, revealing a characteristic disorder lengthscale of 10-100 nm.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Spin transport in ferromagnet-InSb nanowire quantum devices

Signatures of Majorana zero modes (MZMs), which are the building blocks for fault-tolerant topological quantum computing, have been observed in semiconductor nanowires (NW) with strong spin-orbital-interaction (SOI), such as InSb and InAs NWs with proximity-induced superconductivity. Realizing topological superconductivity and MZMs in this most widely-studied platform also requires eliminating spin degeneracy, which is realized by applying a magnetic field to induce a helical gap. However, the applied field can adversely impact the induced superconducting state in the NWs and also places geometric restrictions on the device, which can affect scaling of future MZM-based quantum registers. These challenges could be circumvented by integrating magnetic elements with the NWs. With this motivation, in this work we report the first experimental investigation of spin transport across InSb NWs, which are enabled by devices with ferromagnetic (FM) contacts. We observe signatures of spin polarization and spin-dependent transport in the quasi-one-dimensional ballistic regime. Moreover, we show that electrostatic gating tunes the observed magnetic signal and also reveals a transport regime where the device acts as a spin filter. These results open an avenue towards developing MZM devices in which spin degeneracy is lifted locally, without the need of an applied magnetic field. They also provide a path for realizing spin-based devices that leverage spin-orbital states in quantum wires.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Electromotive Force Generated by Spin Accumulation in FM/$n$-GaAs Heterostructures

We report on a method of quantifying spin accumulation in Co$_{2}$MnSi/$n$-GaAs and Fe/$n$-GaAs heterostructures using a non-magnetic probe. In the presence of a large non-equilibrium spin polarization, the combination of a non-constant density of states and energy-dependent conductivity generates an electromotive force (EMF). We demonstrate that this signal dephases in the presence of applied and hyperfine fields, scales quadratically with the polarization, and is comparable in magnitude to the spin-splitting. Since this spin-generated EMF depends only on experimentally accessible parameters of the bulk material, its magnitude may be used to quantify the injected spin polarization in absolute terms.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Resonance in Magnetostatically Coupled Transverse Domain Walls

We have observed the eigenmodes of coupled transverse domain walls in a pair of ferromagnetic nanowires. Although the pair is coupled magnetostatically, its spectrum is determined by a combination of pinning by edge roughness and dipolar coupling of the two walls. Because the corresponding energy scales are comparable, the coupling can be observed only at the smallest wire separations. A model of the coupled wall dynamics reproduces the experiment quantitatively, allowing for comparisons with the estimated pinning and domain wall coupling energies. The results have significant implications for the dynamics of devices based on coupled domain walls.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Surface Roughness Dominated Pinning Mechanism of Magnetic Vortices in Soft Ferromagnetic Films

Although pinning of domain walls in ferromagnets is ubiquitous, the absence of an appropriate characterization tool has limited the ability to correlate the physical and magnetic microstructures of ferromagnetic films with specific pinning mechanisms. Here, we show that the pinning of a magnetic vortex, the simplest possible domain structure in soft ferromagnets, is strongly correlated with surface roughness, and we make a quantitative comparison of the pinning energy and spatial range in films of various thickness. The results demonstrate that thickness fluctuations on the lateral length scale of the vortex core diameter, i.e. an effective roughness at a specific length scale, provides the dominant pinning mechanism. We argue that this mechanism will be important in virtually any soft ferromagnetic film.

0 citations0 reviewsNo code linkedOpen access