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Patrycja Paruch

Patrycja Paruch appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallcond-mat.dis-nnphysics.app-ph

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Published work

8 published item(s)

preprint2022arXiv

Non-Ising domain walls in c-phase ferroelectric lead titanate thin films

Ferroelectrics are technologically important, with wide application in micromechanical systems, nonlinear optics, and information storage. Recent discoveries of exotic polarisation textures in these materials, which can strongly influence their properties, have brought to the forefront questions about the nature of their domain walls -- long believed to be primarily Ising, with locally null polarisation. Here, combining three complementary techniques -- second harmonic generation microscopy, piezoresponse force microscopy, and transmission electron microscopy - to cover all the relevant lengthscales, we reveal the Néel character (non-Ising polarisation oriented perpendicular to the wall) of 180° domain walls in c-phase tetragonal ferroelectric lead titanate epitaxial thin films, for both artificial and intrinsic domains at room temperature. Furthermore, we show that variations in the domain density -- detected both optically and via local piezoresponse, then quantified by radial autocorrelation analysis -- can give us insight into the underlying defect potential present in these materials.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Switchable tribology of ferroelectrics

Artificially induced asymmetric tribological properties of ferroelectrics offer an alternative route to visualize and control ferroelectric domains. Here, we observe the switchable friction and wear behavior of ferroelectrics using a nanoscale scanning probe where down domains having lower friction coefficient than up domains can be used as smart masks as they show slower wear rate than up domains. This asymmetry is enabled by flexoelectrically coupled polarization in the up and down domains under a sufficiently high contact force. Moreover, we determine that this polarization-sensitive tribological asymmetry is universal across ferroelectrics with different chemical composition and crystalline symmetry. Finally, using this switchable tribology and multi-pass patterning with a domain-based dynamic smart mask, we demonstrate three-dimensional nanostructuring exploiting the asymmetric wear rates of up and down domains, which can, furthermore, be scaled up to technologically relevant (mm-cm) size. These findings establish that ferroelectrics are electrically tunable tribological materials at the nanoscale for versatile applications.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Dynamic response and roughening of ferroelectric domain walls driven at planar electrode edges

Understanding and controlling the motion, stability, and equilibrium configuration of ferroelectric domain walls is key for their integration into potential nanoelectronics applications, such as ferroelectric racetrack memories. Using piezoresponse force microscopy we analyse the growth and roughness of ferroelectric domains in epitaxial thin film Pb(Zr$_{0.2}$Ti$_{0.8}$)O$_3$, driven by the electric fields at straight edges of planar electrodes at two different temperatures. This device relevant geometry allows us to confirm that the domain walls are well described as 1-dimensional monoaffine elastic interfaces driven in random-bond disorder. However, we observe a progressive increase of roughness as initially flat domain walls move through the disorder landscape, which could prove a significant limiting factor for racetrack-type memories using ferroelectrics.

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preprint2015arXiv

Subcritical switching dynamics and humidity effects in nanoscale studies of domain growth in ferroelectric thin films

Ferroelectric domain switching in c-axis-oriented epitaxial Pb(Zr$_{0.2}$Ti$_{0.8}$)O$_3$ thin films was studied using biased scanning probe microscopy tips. While linear and logarithmic dependence of domain size on tip bias and writing time, respectively, are well known, we report an additional linear dependence on relative humidity in the 28-65% range. We map out the switched domain size as a function of both the tip bias and the applied pulse time and describe a growth-limited regime for very short pulses and a nucleation-limited regime for very low tip bias. Using "interrupted-switching" measurements, we probe the nucleation regime with subcritical pulses and identify a surprisingly long relaxation time on the order of 100 ms, which we relate to ionic redistribution both on the surface and within the thin film itself.

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preprint2013arXiv

Identification of a strong contamination source for graphene in vacuum systems

To minimize parasitic doping effects caused by uncontrolled material adsorption, graphene is often investigated under vacuum. Here we report an entirely unexpected phenomenon occurring in vacuum systems, namely strong n-doping of graphene due to chemical species generated by common ion high-vacuum gauges. The effect --reversible upon exposing graphene to air-- is significant, as doping rates can largely exceed 10^{12} cm^{-2}/hour, depending on pressure and the relative position of the gauge and the graphene device. It is important to be aware of the phenomenon, as its basic manifestation can be mistakenly interpreted as vacuum-induced desorption of p-dopants.

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preprint2013arXiv

Understanding polarization vs. charge dynamics effects in ferroelectric-carbon nanotube devices

To optimize the performance of multifunctional carbon nanotube-ferroelectric devices, it is necessary to understand both the polarization and charge dynamics effects on their transconductance. Directly comparing ferroelectric Pb(Zr0.2Ti0.8)O3 and dielectric SrTiO3 field effect transistors, we show that the two effects strongly compete, with transient charge dynamics initially masking up to 40% of the ferroelectric field effect. For applications, it is therefore crucial to maximize the quality of the ferroelectric film and the interface with the carbon nanotube to take full advantage of the switchable polarization.

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preprint2012arXiv

Minimum domain size and stability in carbon nanotube-ferroelectric devices

Ferroelectric domain switching in c-axis-oriented epitaxial Pb(Zr0.2Ti0.8)O3 thin films was studied using different field geometries and compared to numerical simulations and theoretical predictions. With carbon nanotubes as electrodes, continuous nanodomains as small as 9 nm in radius in a 270 nm thick film could be switched, remaining stable for over 20 months. Defect pinning of domain walls appears to play a key role in stabilizing such domains, below the predicted thermodynamic size limit.

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preprint2012arXiv

Thermal quench effects on ferroelectric domain walls

Using piezoresponse force microscopy on epitaxial ferroelectric thin films, we have measured the evolution of domain wall roughening as a result of heat-quench cycles up to 735C, with the effective roughness exponent ζ changing from 0.25 to 0.5. We discuss two possible mechanisms for the observed ζ increase: a quench from a thermal 1-dimensional configuration, and from a locally-equilibrated pinned configuration with a crossover from a 2- to 1-dimensional regime. We find that the post-quench spatial structure of the metastable states, qualitatively consistent with the existence of a growing dynamical length scale whose ultra slow evolution is primarily controlled by the defect configuration and heating process parameters, makes the second scenario more plausible. This interpretation suggests that pinning is relevant in a wide range of temperatures, and in particular, that purely thermal domain wall configurations might not be observable in this glassy system. We also demonstrate the crucial effects of oxygen vacancies in stabilizing domain structures.

0 citations0 reviewsNo code linkedOpen access