BZPEERReading, trust and collaboration for research
Menu

Discover

GraphFollow connections around a paper, topic or saved view.

Workspaces

HomePick up where your research flow left off.InboxHandle requests, replies and notifications from one place.CollectionsCurate reading lists, evidence sets and shareable dossiers.ResearchSee your private provenance graph, trail and imports.CollaborationMove from discovery into focused discussion rooms.PublishDraft, preview and publish full-text research articles.

Network

ExpertsFind specialists worth following or asking for help.CommunitiesJoin research circles organized around shared work.PartnersSee external organizations active around the same topics.

Opportunities

ListingsBrowse roles, calls and collaborations with clearer fit signals.

Account

Log inReturn to your reading and collaboration workspace.Create accountStart saving work, following people and joining teams.
Log inCreate account

Researcher profile

Patrick Parkinson

Patrick Parkinson contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallphysics.app-phquant-ph

Trust snapshot

Quick read

Trust 13 - UnverifiedVerification L1Unclaimed author
2works
0followers
3topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Identity and collaboration

How to connect with this researcher

Claiming links this public author record to a researcher profile and unlocks direct collaboration workflows.

Log in to claim

Direct collaboration

Open a focused conversation when the fit is right

Claim this author entity first to unlock direct invitations.

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

2 published item(s)

preprint2021arXiv

Defect-Free Axially-Stacked GaAs/GaAsP Nanowire Quantum Dots with Strong Carrier Confinement

Axially-stacked quantum dots (QDs) in nanowires (NWs) have important applications in fabricating nanoscale quantum devices and lasers. Although their performances are very sensitive to crystal quality and structures, there is relatively little study on defect-free growth with Au-free mode and structure optimisation for achiving high performances. Here, we report a detailed study of the first self-catalyzed defect-free axially-stacked deep NWQDs. High structural quality is maintained when 50 GaAs QDs are placed in a single GaAsP NW. The QDs have very sharp interfaces (1.8~3.6 nm) and can be closely stacked with very similar structural properties. They exhibit the deepest carrier confinement (~90 meV) and largest exciton-biexciton splitting (~11 meV) among non-nitride III-V NWQDs, and can maintain good optical properties after being stored in ambient atmosphere for over 6 months due to excellent stability. Our study sets a solid foundation to build high-performance axially-stacked NWQD devices that are compatible with CMOS technologies.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Characterisation, Selection and Micro-Assembly of Nanowire Laser Systems

Semiconductor nanowire (NW) lasers are a promising technology for the realisation of coherent optical sources with extremely small footprint. To fully realize their potential as building blocks in on-chip photonic systems, scalable methods are required for dealing with large populations of inhomogeneous devices that are typically randomly distributed on host substrates. In this work two complementary, high-throughput techniques are combined: the characterisation of nanowire laser populations using automated optical microscopy, and a high accuracy transfer printing process with automatic device spatial registration and transfer. In this work a population of NW lasers is characterised, binned by threshold energy density and subsequently printed in arrays onto a secondary substrate. Statistical analysis of the transferred and control devices show that the transfer process does not incur measurable laser damage and the threshold binning can be maintained. Analysis is provided on the threshold and mode spectra of the device populations to investigate the potential for using NW lasers for integrated systems fabrication.

0 citations0 reviewsNo code linkedOpen access