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Pasi Häkkinen

Pasi Häkkinen contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hall cond-mat.supr-con

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preprint2015arXiv

Wideband superconducting nanotube electrometer

We have investigated the microwave response of nanotube Josephson junctions at 600-900 MHz at microwave powers corresponding to currents from 0 to $2\times I_{\mathrm C}$ in the junction. Compared with theoretical modeling, the response of the junctions correspond well to the lumped element model of resistively and capacitively shunted junction. We demonstrate the operation of these superconducting FETs as charge detectors at high frequencies without any matching circuits. Gate-voltage-induced charge $Q_{\rm G}$ modifies the critical current $I_{\rm C}$, which changes the effective impedance of the junction under microwave irradiation. This change, dependent on the transfer characteristics $dI_{\mathrm C}/dQ_{\rm G}$, modifies the reflected signal and it can be used for wide band electrometry. We measure a sensitivity of $3.1\times10^{-5}$ $e/\sqrt{\mathrm{Hz}}$ from a sample which has a maximum switching current of 2.6 nA.

preprint2011arXiv

Energy relaxation in graphene and its measurement with supercurrent

We study inelastic energy relaxation in graphene for low energies to find out how electrons scatter with acoustic phonons and other electrons. By coupling the graphene to superconductors, we create a strong dependence of the measured signal, i.e.,\ critical Josephson current, on the electron population on different energy states. Since the relative population of high- and low-energy states is determined by the inelastic scattering processes, the critical current becomes an effective probe for their strength. We argue that the electron-electron interaction is the dominant relaxation method and, in our model of two-dimensional electron-electron scattering, we find a scattering time $τ_{e-e}=5... 13$ ps at T=500 mK, 1-2 orders of magnitude smaller than predicted by theory.

preprint2010arXiv

Strong gate coupling of high-Q nanomechanical resonators

The detection of mechanical vibrations near the quantum limit is a formidable challenge since the displacement becomes vanishingly small when the number of phonon quanta tends towards zero. An interesting setup for on-chip nanomechanical resonators is that of coupling them to electrical microwave cavities for detection and manipulation. Here we show how to achieve a large cavity coupling energy of up to (2 π) 1 MHz/nm for metallic beam resonators at tens of MHz. We used focused ion beam (FIB) cutting to produce uniform slits down to 10 nm, separating patterned resonators from their gate electrodes, in suspended aluminum films. We measured the thermomechanical vibrations down to a temperature of 25 mK, and we obtained a low number of about twenty phonons at the equilibrium bath temperature. The mechanical properties of Al were excellent after FIB cutting and we recorded a quality factor of Q ~ 3 x 10^5 for a 67 MHz resonator at a temperature of 25 mK. Between 0.2K and 2K we find that the dissipation is linearly proportional to the temperature.