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Pankhuri Gupta

Pankhuri Gupta contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2026arXiv

Giant Damping-like Spin-Torque Conductivity in a GeTe/Py van der Waals Heterostructure

Recent observations of large unconventional spin-orbit torques in van der Waals (vdW) materials are driving intense interest for energy-efficient spintronic applications. A key limitation of ferromagnet (FM)/vdW heterostructures is their lower value of damping-like torque conductivity ($σ{\rm_{DL}^{y}}$) compared to the conventional heavy metal-based systems, limiting their prospects for commercial spintronic devices. Here, we report both a giant $σ{\rm_{DL}^{y}}$ of $-(1.25 \pm 0.11)\times 10^{5}~\hbar/ 2e~Ω^{-1}$m$^{-1}$ and an unconventional spin-orbit torque in a heterostructure comprising an FM (Ni$_{80}$Fe$_{20}$) and the vdW material GeTe. The value of $σ{\rm_{DL}^{y}}$ represents the highest reported torque conductivity for any FM/vdW interface and is comparable to benchmark heavy metal heterostructures. First-principles calculations reveal that this substantial torque originates from the cooperative interplay of the spin Hall effect, orbital Hall effect, and orbital Rashba effect, assisted by interfacial charge transfer. These findings demonstrate the potential of carefully engineered vdW heterostructures to achieve highly efficient electrical manipulation of magnetization at room temperature, paving the way for next-generation low-power spintronic devices.

preprint2022arXiv

Large spin-to-charge conversion at the two-dimensional interface of transition metal dichalcogenides and permalloy

Spin-to-charge conversion is an essential requirement for the implementation of spintronic devices. Recently, monolayers of semiconducting transition metal dichalcogenides (TMDs) have attracted considerable interest for spin-to-charge conversion due to their high spin-orbit coupling and lack of inversion symmetry in their crystal structure. However, reports of direct measurement of spin-to-charge conversion at TMD-based interfaces are very much limited. Here, we report on the room temperature observation of a large spin-to-charge conversion arising from the interface of Ni$_{80}$Fe$_{20}$ (Py) and four distinct large area ($\sim 5\times2$~mm$^2$) monolayer (ML) TMDs namely, MoS$_2$, MoSe$_2$, WS$_2$, and WSe$_2$. We show that both spin mixing conductance and the Rashba efficiency parameter ($λ_{IREE}$) scales with the spin-orbit coupling strength of the ML TMD layers. The $λ_{IREE}$ parameter is found to range between $-0.54$ and $-0.76$ nm for the four monolayer TMDs, demonstrating a large spin-to-charge conversion. Our findings reveal that TMD/ferromagnet interface can be used for efficient generation and detection of spin current, opening new opportunities for novel spintronic devices.