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Researcher profile

Panayotis Spathis

Panayotis Spathis contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.supr-concond-mat.dis-nn

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Published work

6 published item(s)

preprint2014arXiv

Condensation of helium in aerogels and athermal dynamics of the Random Field Ising Model

High resolution measurements reveal that condensation isotherms of $^4$He in a silica aerogel become discontinuous below a critical temperature. We show that this behaviour does not correspond to an equilibrium phase transition modified by the disorder induced by the aerogel structure, but to the disorder-driven critical point predicted for the athermal out-of-equilibrium dynamics of the Random Field Ising Model. Our results evidence the key role of non-equilibrium effects in the phase transitions of disordered systems.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

PtSi Clustering In Silicon Probed by Transport Spectroscopy

Metal silicides formed by means of thermal annealing processes are employed as contact materials in microelectronics. Control of the structure of silicide/silicon interfaces becomes a critical issue when the device characteristic size is reduced below a few tens of nanometers. Here we report on silicide clustering occurring within the channel of PtSi/Si/PtSi Schottky barrier transistors. This phenomenon is investigated through atomistic simulations and low-temperature resonant tunneling spectroscopy. Our results provide evidence for the segregation of a PtSi cluster with a diameter of a few nanometers from the silicide contact. The cluster acts as metallic quantum dot giving rise to distinct signatures of quantum transport through its discrete energy states.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Multifunctional Devices and Logic Gates With Undoped Silicon Nanowires

We report on the electronic transport properties of multiple-gate devices fabricated from undoped silicon nanowires. Understanding and control of the relevant transport mechanisms was achieved by means of local electrostatic gating and temperature dependent measurements. The roles of the source/drain contacts and of the silicon channel could be independently evaluated and tuned. Wrap gates surrounding the silicide-silicon contact interfaces were proved to be effective in inducing a full suppression of the contact Schottky barriers, thereby enabling carrier injection down to liquid-helium temperature. By independently tuning the effective Schottky barrier heights, a variety of reconfigurable device functionalities could be obtained. In particular, the same nanowire device could be configured to work as a Schottky barrier transistor, a Schottky diode or a p-n diode with tunable polarities. This versatility was eventually exploited to realize a NAND logic gate with gain well above one.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Joule-assisted silicidation for short-channel silicon nanowire devices

We report on a technique enabling electrical control of the contact silicidation process in silicon nanowire devices. Undoped silicon nanowires were contacted by pairs of nickel electrodes and each contact was selectively silicided by means of the Joule effect. By a realtime monitoring of the nanowire electrical resistance during the contact silicidation process we were able to fabricate nickel-silicide/silicon/nickel- silicide devices with controlled silicon channel length down to 8 nm.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Hybrid InAs nanowire-vanadium proximity SQUID

We report the fabrication and characterization of superconducting quantum interference devices (SQUIDs) based on InAs nanowires and vanadium superconducting electrodes. These mesoscopic devices are found to be extremely robust against thermal cycling and to operate up to temperatures of $\sim2.5$~K with reduced power dissipation. We show that our geometry allows to obtain nearly-symmetric devices with very large magnetic-field modulation of the critical current. All these properties make these devices attractive for on-chip quantum-circuit implementation.

0 citations0 reviewsNo code linkedOpen access
preprint2006arXiv

Vortex liquid correlations induced by in-plane field in underdoped Bi2Sr2CaCu2O8+d

By measuring the Josephson Plasma Resonance, we have probed the influence of an in-plane magnetic field on the pancake vortex correlations along the c-axis in heavily underdoped Bi2Sr2CaCu2O8+d (Tc = 72.4 +/- 0.6 K) single crystals both in the vortex liquid and in the vortex solid phase. Whereas the in-plane field enhances the interlayer phase coherence in the liquid state close to the melting line, it slightly depresses it in the solid state. This is interpreted as the result of an attractive force between pancake vortices and Josephson vortices, apparently also present in the vortex liquid state. The results unveil a boundary between a correlated vortex liquid in which pancakes adapt to Josephson vortices, and the usual homogeneous liquid.

0 citations0 reviewsNo code linkedOpen access