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P. N. Hai

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cond-mat.mtrl-sci

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preprint2014arXiv

Spin and orbital magnetic moments of Fe in the $n$ -type ferromagnetic semiconductor (In,Fe)As

The electronic and magnetic properties of Fe atoms in the ferromagnetic semiconductor (In,Fe)As codoped with Be have been studied by x-ray absorption spectroscopy (XAS) and x-ray magnetic circular dichroism (XMCD) at the Fe $L_{2,3}$ edge. The XAS and XMCD spectra showed simple spectral line shapes similar to Fe metal, but the ratio of the orbital and spin magnetic moments ( $M_\mathrm{orb}$ / $M_\mathrm{spin}$ ) estimated using the XMCD sum rules was significantly larger than that of Fe metal, indicating a significant orbital moment of Fe $3d$ electrons in (In,Fe)As:Be. The positive value of $M_\mathrm{orb}$ / $M_\mathrm{spin}$ implies that the Fe $3d$ shell is more than half-filled, which arises from the hybridization of the Fe $^{3+}$ ( $d^5$ ) state with the charge-transfer $d^6\underline{L}$ states, where $\underline{L}$ is a ligand hole in the host valence band. The XMCD intensity as a function of magnetic field indicated hysteretic behavior of the superparamagnetic-like component due to discrete ferromagnetic domains.

preprint2013arXiv

Electronic excitations of magnetic impurity state in diluted magnetic semiconductor (Ga,Mn)As

The electronic structure of doped Mn in (Ga,Mn)As is studied by resonant inelastic X-ray scattering (RIXS). From configuration-interaction cluster-model calculations, the line shapes of the Mn $L_3$ RIXS spectra can be explained by $d$ - $d$ excitations from the Mn $^{3+}$ ground state, dominated by charge-transferred states, rather than a Mn $^{2+}$ ground state. Unlike archetypical $d$ - $d$ excitation, the peak widths are broader than the experimental energy resolution. We attribute the broadening to a finite lifetime of the $d$ - $d$ excitations, which decay rapidly to electron-hole pairs in the host valence and conduction bands through hybridization of the Mn $3d$ orbital with the ligand band.

preprint2006arXiv

Quantum-size effect and tunneling magnetoresistance in ferromagnetic-semiconductor quantum heterostructures

We report on the resonant tunneling effect and the increase of tunneling magnetoresistance (TMR) induced by it in ferromagnetic-semiconductor GaMnAs quantum-well heterostructures. The observed quantum levels of the GaMnAs quantum well were successfully explained by the valence-band kp model with the p-d exchange interaction. It was also found that the Fermi level of the electrode injecting carriers is important to observe resonant tunneling in this system.

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P. N. Hai

Research overview

Is this your work?

3 publications

Spin and orbital magnetic moments of Fe in the $n$ -type ferromagnetic semiconductor (In,Fe)As

Electronic excitations of magnetic impurity state in diluted magnetic semiconductor (Ga,Mn)As

Quantum-size effect and tunneling magnetoresistance in ferromagnetic-semiconductor quantum heterostructures

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P. N. Hai

Research overview

Is this your work?

3 publications

Spin and orbital magnetic moments of Fe in the nnn-type ferromagnetic semiconductor (In,Fe)As

Electronic excitations of magnetic impurity state in diluted magnetic semiconductor (Ga,Mn)As

Quantum-size effect and tunneling magnetoresistance in ferromagnetic-semiconductor quantum heterostructures

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Building this map preview

Spin and orbital magnetic moments of Fe in the $n$ -type ferromagnetic semiconductor (In,Fe)As