Growth of Single Unit-Cell Superconducting LaSrCuO Films
We have developed an approach to grow high quality ultrathin films of LaSrCuO with molecular beam epitaxy, by adding a homoepitaxial buffer layer in order to minimize the degradation of the film structure at the interface. The advantage of this method is to enable a further reduction of the minimal thickness of a superconducting LaSrCuO film. The main result of our work is that a single unit cell (only two copper oxide planes) grown on a SrLaAlO substrate exhibits a superconducting transition at 12.5 K (zero resistance) and an in-plane magnetic penetration depth = 535 nm.