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Researcher profile

P. Jund

P. Jund contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sci

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Published work

6 published item(s)

preprint2020arXiv

Thermal dependence of the mechanical properties of NiTiSn using first-principles calculations and high-pressure X-ray diffraction

In this work we aim to study the effect of temperature on the mechanical properties of a solid. For this, we have introduced a new first-principles based methodology to obtain the thermal variation of the elastic constants of NiTiSn, a multifunctional Heusler compound. In parallel using X-ray diffraction, we have measured the isothermal bulk modulus at 300~K. The agreement between the calculations and the experiments is within the experimental error bars showing the accuracy of the calculations. Using two other numerical methods, which give all coherent results, we have shown that NiTiSn conserves its very good mechanical properties up to 1500~K. In particular at 700~K (the best working temperature for thermoelectric applications), NiTiSn remains a ductile and robust material making it a compound of choice for applications in which large temperature fluctuations are present.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Thermoelectric power factor of pure and doped ZnSb via DFT based defect calculations

The power factor of pure p-type ZnSb has been calculated via ab initio simulations assuming that the carrier concentrations are due to the doping effect of intrinsic zinc vacancies. With a vacancy concentration close to the experimental solubility limit we were able to perfectly reproduce the Power Factor measured in polycrystalline ZnSb samples. The methodology has then been successfully extended for predicting the effect of extrinsic doping elements on the thermoelectric properties of ZnSb. Germanium and tin seem to be promising p-type doping elements. In addition, we give, for the first time, an explanation of why it is difficult to synthesize polycrystalline n-type ZnSb samples. Indeed, compensative effects between intrinsic defects (zinc vacancies) and doping elements (Ga, or In) explain the existence of an optimal (and relatively high) dopant concentration necessary to convert ZnSb into an n-type semiconductor.

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preprint2020arXiv

Unexpected band gap increase in the Fe2VAl Heusler compound

Knowing the electronic structure of a material is essential in energy applications to rationalize its performance and propose alternatives. Materials for thermoelectric applications are generally small-gap semiconductors and should have a high figure of merit ZT. Even if the Fe2VAl Heusler compound has a decent ZT, its conductive nature (semi-metal or semiconductor) is not yet clarified especially at low temperature. In this paper, we focus our DFT calculations on the effect of temperature on the bandgap of Fe2VAl. In contrast to what is usually observed, we show that both the temperature increase and the formation of thermally-activated Al/V inversion defects (observed experimentally), open the bandgap. Such an unusual behavior is the key for reconciling all bandgap measurements performed on the Fe2VAl compound using a standard GGA functional and could be an efficient way for improving the thermoelectric properties of this family of materials.

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preprint2015arXiv

Thermal Expansion of Ni-Ti-Sn Heusler and Half-Heusler Materials from First Principles Calculations and Experiments

We coupled first principles calculations and the quasiharmonic approximation combined with experiments (X-Ray diffraction and dilatometry measurements) to determine the thermal properties of NiTiSn (half-Heusler) and Ni2TiSn (Heusler) compounds. These properties are important especially if they are to be used in thermoelectric applications. First, the calculation of their mode Gruneisen parameter shows that it is positive throughout the first Brillouin zone. This suggests that these compounds undergo a regular thermal expansion. Then, the calculation of the Ni2TiSn thermal expansion shows an excellent agreement, even in the high temperature range, with our high energy powder X-Ray diffraction measurements (ESRF) and dilatometry experiments. In the case of NiTiSn, this agreement is less impressive. This could be due to stronger phonon-phonon interactions that are not considered within the quasiharmonic approximation, but also to the difficulty of making high-quality NiTiSn samples. Finally, the constant-pressure and constant-volume heat capacities have been calculated for both compounds and compared with the experimental data reported in the literature. In particular, we have decomposed the constant-volume heat capacity of Ni2TiSn into a purely electronic and a phonon-mediated contribution, and we discuss each of them.

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preprint2013arXiv

A first-principles investigation of the thermodynamic and mechanical properties of Ni-Ti-Sn Heusler and half-Heusler materials

First principles calculations of the vibrational, thermodynamic and mechanical properties of the Ni-Ti-Sn Heusler and half-Heusler compounds have been performed. First, we have calculated the Raman and infrared spectra of NiTiSn, providing benchmark theoretical data directly useful for the assignments of its experimental spectra and clarifying the debate reported in the literature on the assignment of its modes. Then, we have discussed the significant vibrational density-of-states of Ni2TiSn at low-frequencies. These states are at the origin of (i) its smaller free energy, (ii) its higher entropy, and (iii) its lower Debye temperature, with respect to NiTiSn. Finally, we have reported the mechanical properties of the two compounds. In particular, we have found that the half-Heusler compound has the largest stiffness. Paradoxically, its bulk modulus is also the smallest. This unusual behavior has been related to the Ni-vacancies that weaken the structure under isostatic compression. Both compounds show a ductile behavior.

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preprint2011arXiv

Stability and thermoelectric properties of transition metal silicides from first principles calculations

We report an ab-initio study of the stability and electronic properties of transition metal silicides in order to study their potential for high temperature thermoelectric applications. We focus on the family M5Si3 (M = Ta, W) which is stable up to about 2000 °C. We first investigate the structural stability of the two compounds and then determine the thermopower of the equilibrium structure using the electronic density of states and Mott's law. We find that W5Si3 has a relatively large thermopower but probably not sufficient enough for thermoelectric applications.

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