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P. J. Poole

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Published work

4 published item(s)

preprint2012arXiv

Non-linear magnetotransport phenomena in high-mobility two-dimensional electrons in InGaAs/InP and GaAs/AlGaAs

This paper reports on the observation and analysis of magnetotransport phenomena in the nonlinear differential resistance $r_{xx}=dV_{xx}/dI$ of high-mobility InGaAs/InP and GaAs/AlGaAs Hall bar samples driven by direct current, $\Idc$. Specifically, it is observed that Shubnikov -de Haas (SdH) oscillations at large filling factors invert their phase at sufficiently large values of $\Idc$. This phase inversion is explained as being due to an electron heating effect. In the quantum Hall effect regime the $r_{xx}$ oscillations transform into diamond-shaped patterns with different slopes corresponding to odd and even filling factors. The diamond-shaped features at odd filling factors can be used as a probe to determine spin energy gaps. A Zero Current Anomaly (ZCA) which manifests itself as a narrow dip in the $r_{xx}(\Idc)$ characteristics at zero current, is also observed. The ZCA effect strongly depends upon temperature, vanishing above 1 K while the transport diamonds persist to higher temperatures. The transport diamonds and ZCA are fully reproduced in a higher mobility GaAs/AlGaAs Hall bar structure confirming that these phenomena reflect intrinsic properties of two-dimensional systems.

preprint2011arXiv

Influence of electron-acoustic phonon scattering on off-resonant cavity feeding within a strongly coupled quantum-dot cavity system

We present a medium-dependent quantum optics approach to describe the influence of electron-acoustic phonon coupling on the emission spectra of a strongly coupled quantum-dot cavity system. Using a canonical Hamiltonian for light quantization and a photon Green function formalism, phonons are included to all orders through the dot polarizability function obtained within the independent Boson model. We derive simple user-friendly analytical expressions for the linear quantum light spectrum, including the influence from both exciton and cavity-emission decay channels. In the regime of semiconductor cavity-QED, we study cavity emission for various exciton-cavity detunings and demonstrate rich spectral asymmetries as well as cavity-mode suppression and enhancement effects. Our technique is nonperturbative, and non-Markovian, and can be applied to study photon emission from a wide range of semiconductor quantum dot structures, including waveguides and coupled cavity arrays. We compare our theory directly to recent and apparently puzzling experimental data for a single site-controlled quantum dot in a photonic crystal cavity and show good agreement as a function of cavity-dot detuning and as a function of temperature.

preprint2010arXiv

Few-electron quantum dots in III-V ternary alloys: role of fluctuations

We study experimentally the electron transport properties of gated quantum dots formed in InGaAs/InP and InAsP/InP quantum well structures grown by chemical-beam epitaxy. For the case of the InGaAs quantum well, quantum dots form directly underneath narrow gate electrodes due to potential fluctuations. We measure the Coulomb-blockade diamonds in the few-electron regime of a single quantum dot and observe photon-assisted tunneling peaks under microwave irradiation. A singlet-triplet transition at high magnetic field and Coulomb-blockade effects in the quantum Hall regime are also observed. For the InAsP quantum well, an incidental triple quantum dot forms also due to potential fluctuations within a single dot layout. Tunable quadruple points are observed via transport measurements.

preprint2009arXiv

Electron transport in gated InGaAs and InAsP quantum well wires in selectively-grown InP ridge structures

The purpose of this work is to fabricate ribbon-like InGaAs and InAsP wires embedded in InP ridge structures and investigate their transport properties. The InP ridge structures that contain the wires are selectively grown by chemical beam epitaxy (CBE) on pre-patterned InP substrates. To optimize the growth and micro-fabrication processes for electronic transport, we explore the Ohmic contact resistance, the electron density, and the mobility as a function of the wire width using standard transport and Shubnikov-de Haas measurements. At low temperatures the ridge structures reveal reproducible mesoscopic conductance fluctuations. We also fabricate ridge structures with submicron gate electrodes that exhibit non-leaky gating and good pinch-off characteristics acceptable for device operation. Using such wrap gate electrodes, we demonstrate that the wires can be split to form quantum dots evidenced by Coulomb blockade oscillations in transport measurements.