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P. D. Ye

P. D. Ye contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hall cond-mat.mtrl-sci

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preprint2012arXiv

20-80nm Channel Length InGaAs Gate-all-around Nanowire MOSFETs with EOT=1.2nm and Lowest SS=63mV/dec

In this paper, 20nm - 80nm channel length (Lch) InGaAs gate- all-around (GAA) nanowire MOSFETs with record high on- state and off-state performance have been demonstrated by equivalent oxide thickness (EOT) and nanowire width (WNW) scaling down to 1.2nm and 20nm, respectively. SS and DIBL as low as 63mV/dec and 7mV/V have been demonstrated, indicating excellent interface quality and scalability. Highest ION = 0.63mA/μm and gm = 1.74mS/μm have also been achieved at VDD=0.5V, showing great promise of InGaAs GAA technology for 10nm and beyond high-speed low- power logic applications.

preprint2012arXiv

III-V Gate-all-around Nanowire MOSFET Process Technology: From 3D to 4D

In this paper, we have experimentally demonstrated, for the first time, III-V 4D transistors with vertically stacked InGaAs nanowire (NW) channels and gate-all-around (GAA) architecture. Novel process technology enabling the transition from 3D to 4D structure has been developed and summarized. The successful fabrication of InGaAs lateral and vertical NW arrays has led to 4x increase in MOSFET drive current. The top-down technology developed in this paper has opened a viable pathway towards future low-power logic and RF transistors with high-density III-V NWs.

preprint2009arXiv

Observation of quantum-Hall effect in gated epitaxial graphene grown on SiC (0001)

Epitaxial graphene films were formed on the Si-face of semi-insulating 4H-SiC substrates by a high temperature sublimation process. A high-k gate stack on epitaxial graphene is realized by inserting a fully oxidized nanometer thin aluminum film as a seeding layer followed by an atomic-layer deposition process. The electrical properties of epitaxial graphene films are sustained after gate stack formation without significant degradation. At low temperatures, the quantum-Hall effect in Hall resistance is observed along with pronounced Shubnikov-de Hass oscillations in diagonal magneto-resistance of gated epitaxial graphene on SiC (0001).

preprint2003arXiv

Wigner crystalization about $ν$=3

We measure a resonance in the frequency dependence of the real diagonal conductivity, Re[$σ_{xx}$], near integer filling factor, $ν=3$. This resonance depends strongly on $ν$, with peak frequency $f_{pk} \approx 1.7$ GHz at $ν=3.04$ or 2.92 close to integer $ν$, but $f_{pk} \approx$ 600 MHz at $ν=3.19$ or 2.82, the extremes of where the resonance is visible. The dependence of $f_{pk}$ upon $n^*$, the density of electrons in the partially filled level, is discussed and compared with similar measurments by Chen {\it et al.}\cite{yong} about $ν=1$ and 2. We interpret the resonance as due to a pinned Wigner crystal phase with density $n^*$ about the $ν=3$ state.