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P. C. Snijders

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cond-mat.mtrl-sci cond-mat.mes-hall

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preprint2014arXiv

Current-Dependent Periodicities of Si(553)-Au

We investigate quasi one-dimensional atomic chains on Si(553)-Au with a scanning tunneling microscope (STM). The observed periodicity at the Si step edge can be altered by the STM and depends on the magnitude of the tunneling current. In a recent report this reversible structural transition was attributed to transient doping with a characteristic time scale of a few milliseconds. Here we explore the evolution of the STM topography as a function of the magnitude of the tunneling current for a wide temperature range. Based on a decomposition of topographic line profiles and a detailed Fourier analysis we conclude that all observed currentdependent STM topographies can be explained by a time-averaged linear combination of two fluctuating step-edge structures. These data also reveal the precise relative alignment of the characteristic STM features for both phases along the step edges. A simple diagram is developed, presenting the relative contribution of these phases to the STM topography as a function of tunneling current and temperature. Time- and current-dependent measurements of fluctuations in the tunneling current reveal two different transition regimes that are related to two specific current injection locations within the surface unit cell. A method based on spatially resolved I(z)curves is presented that enables a quantitative analysis of contributing phases.

preprint2014arXiv

Spectroscopic evidence for spin-polarized edge states in graphitic Si nanowires

The step edges on the Si(553)-Au surface undergo a 1 x 3 reconstruction at low temperature which has recently been interpreted theoretically as the x3 ordering of spin-polarized silicon atoms at the edges of the graphitic Si nanowires on this vicinal surface. This predicted magnetic ground state has a clear spectroscopic signature - a silicon step-edge state at 0.5 eV above the Fermi level - that arises from strong exchange splitting and hence would not occur without spin polarization. Here we report spatially resolved scanning tunneling spectroscopy data for these nanowires. At low temperature we find an unoccupied state at 0.5 eV above every third step edge silicon atom, in excellent agreement with the spin-polarized ground state predicted theoretically. This spin-polarized state survives up to room temperature where the position of the spins rapidly fluctuates among all Si step-edge sites.

preprint2013arXiv

Silicon spin chains at finite temperature: dynamics of Si(553)-Au

When gold is deposited on Si(553), the surface self-assembles to form a periodic array of steps with nearly perfect structural order. In scanning tunneling microscopy these steps resemble quasi-one-dimensional atomic chains. At temperatures below ~50 K the chains develop tripled periodicity. We recently predicted, on the basis of density-functional theory calculations at T=0, that this tripled periodicity arises from the complete polarization of the electron spin on every third silicon atom along the step; in the ground state these linear chains of silicon spins are antiferromagnetically ordered. Here we explore, using ab-initio molecular dynamics and kinetic Monte Carlo simulations, the behavior of silicon spin chains on Si(553)-Au at finite temperature. Thermodynamic phase transitions at T>0 in one-dimensional systems are prohibited by the Mermin-Wagner theorem. Nevertheless we find that a surprisingly sharp onset occurs upon cooling---at about 30 K for perfect surfaces and at higher temperature for surfaces with defects---to a well-ordered phase with tripled periodicity, in good agreement with experiment.