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Ostrikov

Ostrikov contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2022arXiv

Nanoparticle-enhanced Multifunctional Nanocarbons as Metal-ion Battery and Capacitor Anodes and Supercapacitor Electrodes -- Review

As renewable energy is becoming a critical energy source to meet the global demand, electrochemical energy storage devices become indispensable for the efficient energy storage and reliable supply. The electrode material is the key factor determining the energy storage capacity and the power delivery of the devices. Carbon-based materials are emerging as a viable candidate for electrodes, yet their low energy densities impede the development of advanced energy storage materials. Nanoparticle decoration of the carbon structures is one of the most promising and easy-to-implement a strategy to enhance the charge-storage performance of carbon-based electrodes. Decoration by nanoparticles of metals, metal oxides, nitrides, carbides, phosphides, chalcogenides, and bimetallic components lead to significant enhancements in the structural and electronic properties, pore refinement, charge storage, and charge transfer kinetics of both pristine and doped carbon structures, thereby making their performance promising for next-generation energy storage devices. This review covers the state-of-art nanoparticle decorated nanocarbons for battery, supercapacitor, and metal-ion capacitor applications. A critical analysis of the elemental composition, structure, associated physico-chemical properties and performance relationships of nanoparticle-decorated nanocarbon electrodes is provided as well to inform the future development of the next generation of advanced energy storage materials, devices, and systems.

preprint2022arXiv

Plasma-Electric Field Controlled Growth of Oriented Graphene for Energy Storage Applications

Graphene is well known to grow as flat sheets aligned with the growth substrate. Oriented graphene structures typically normal to the substrate have recently gained major attention. Most often, normal orientation is achieved in plasma-assisted growth and is believed to be due to plasma induced in-built electric field, which is usually oriented normal to the substrate. This work focuses on the effect of in-built electric field on growth direction, morphology, interconnectedness, and physical properties of various configurations of graphene structures and reveals the unique dependence of these features on electric field orientation. It is shown that tilting of growth substrates from parallel to normal direction with respect to the direction of inbuilt plasma electric field leads to the morphological transitions from flat graphene structure, to oriented individual graphene sheets and then interconnected three-dimensional networks of oriented graphene sheets. The revealed transition of the growth orientation leads to change in wetting nature, types of defect in graphitic structures as well as affects their charge storage capacity when used as supercapacitor electrodes. This simple and versatile approach opens new opportunities for the production of potentially large batches of differently oriented and structured graphene sheets in one production run.

preprint2009arXiv

Controlling electronic and adiabatic isolation of quantum dots from the substrate: An ionization-energy theoretic study

Recent controversy on the quantum dots dephasing mechanisms (between pure and inelastic) is re-examined by isolating the quantum dots from their substrate by using the appropriate limits of the ionization energy theory and the quantum adiabatic theorem. When the phonons in the quantum dots are isolated adiabatically from the phonons in the substrate, the elastic or pure dephasing becomes the dominant mechanism. On the other hand, for the case where the phonons from the substrate are non-adiabatically coupled to the quantum dots, the inelastic dephasing process takes over. This switch-over is due to different elemental composition in quantum dots as compared to its substrate. We also provide unambiguous analyses as to understand why GaAs/AlGaAs quantum dots may only have pure dephasing while InAs/GaAs quantum dots give rise to the inelastic dephasing as the dominant mechanism. Our study accentuates the importance of the elemental composition (of both quantum dots and substrate) in evaluating the dephasing mechanisms of quantum dots.